Ordering number : ENN7287
2SC5832
NPN Epitaxial Planar Silicon Transistor
2SC5832
Driver Applications
Applications
•
Package Dimensions
unit : mm
2045B
[2SC5832]
1.5
Suitable for use in switching of inductive load
(motor drivers, printer hammer drivers, relay drivers).
Features
•
•
•
•
•
High DC current gain.
Wide ASO.
On-chip zener diode of 65±10V between collector and
base.
Uniformity in collector-to-base voltage.
Large inductive load handling capability.
6.5
5.0
4
2.3
0.5
0.85
0.7
0.8
1.6
5.5
7.0
1.2
7.5
0.6
1
2
3
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
2.3
2.3
SANYO : TP
unit : mm
2044B
[2SC5832]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.8
0.5
2
3
2.5
1.2
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM
13003 TS IM TA-3670 No.7287-1/4
2SC5832
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
On-chip zener diode(65±10V)
On-chip zener diode(65±10V)
Ratings
55
55
6
2
4
1.0
10
150
−55
to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Inductive Load
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Es / b
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
ton
tstg
tf
VCB=40V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=1A
L=100mH, RBE=100Ω
IC=1A, IB=4mA
IC=1A, IB=4mA
IC=100µA, IE=0
IC=1mA, RBE=∞
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
25
1.0
55
55
65
65
0.2
3.5
0.5
1.5
2.0
75
75
1000
4000
180
MHz
mJ
V
V
V
V
µs
µs
µs
Conditions
Ratings
min
typ
max
10
2
Unit
µA
mA
Switching Time Test Circuit
PW=50µs, Duty Cycle≤1%
IB1= --IB2=4mA
TUT
INPUT
RB
VR
50Ω
+
100µF
VBB= --5V
IC=250A, IB1= --250A, IB2=1A
+
470µF
VCC=20V
RL
20Ω
OUTPUT
Es / b Test Circuit
VCC=20V, RBE=100Ω
L
TUT
SW
+VCC
IB
RBE
10kΩ 300Ω
2.0
IC -- VCE
20
µ
00
15
2.4
IC -- VBE
VCE=5V
00
µ
A
A
µ
A
1000
Collector Current, IC -- A
Collector Current, IC -- A
1.6
1.2
0
°
C
µ
500
A
A
300
µ
50
µ
A
A 3
400
µ
µ
A
450
250
µ
A
2.0
1.6
1.2
0.8
0.8
150µA
0.4
0.4
0
0
1
2
3
IB=0
4
5
ITR06005
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
Ta=1
2
--40
°
C
200
µ
A
25
°
C
ITR06006
No.7287-2/4
2SC5832
3
2
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
5
7
0.1
2
3
5
7
1.0
2
3
5
hFE -- IC
VCE=5V
0
°
C
C
1000
7
Cob -- VCB
f=1MHz
DC Current Gain, hFE
Ta
2
=1
Output Capacitance, Cob -- pF
5
3
2
25
°
100
7
5
3
2
°
C
--40
10
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5
Collector Current, IC -- A
10
7
ITR06007
10
7
Collector-to-Base Voltage, VCB -- V
ITR06008
VCE(sat) -- IC
VBE(sat) -- IC
IC / IB=250
IC / IB=250
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
5
3
2
3
2
Ta= --40°C
25
°C
1.0
7
5
3
0.1
25
°C
0
°
C
Ta= --4
1.0
7
5
3
0.1
120
°
C
120
°
C
2
3
5
7
1.0
2
3
5
IT04364
2
3
5
7
1.0
2
3
5
Collector Current, IC -- A
10
7
5
IC -- L
Collector Current, IC -- A
7
5
3
2
ITR06010
ASO
RBE=100Ω
Tc=25°C
Collector Current, IC -- A
ICP=4A
IC=2A
10µs
10
Collector Current, IC -- A
3
2
25m
J
1.0
7
5
3
2
0.1
7
5
3
Ta
=
25
°
C
,
ms
Tc
=2
DC
5
°
op
C
era
tio
n
DC
op
era
10
s
0
µ
ms
1
1.0
7
5
3
2
2
3
5
7
10
2
3
5
7 100
2
3
tio
n
2
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
L -- mH
1.4
ITR06011
12
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
IT04365
PC -- Tc
1.2
Collector Dissipation, PC -- W
1.0
Collector Dissipation, PC -- W
100
120
140
160
10
8
0.8
No
h
0.6
ea
6
ts
ink
4
0.4
0.2
0
0
20
40
60
80
2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT04366
Case Temperature, Tc --
°C
IT05327
No.7287-3/4
2SC5832
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2003. Specifications and information herein are subject
to change without notice.
PS No.7287-4/4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
