Freescale Semiconductor
Technical Data
Document Number: MRF9582NT1
Rev. 1, 7/2006
Silicon Lateral FET, N - Channel
Enhancement - Mode MOSFET
Designed for use in medium voltage, moderate power amplifiers such as
portable analog and digital cellular radios and PC RF modems.
•
Typical CW RF Performance @ 849 MHz: V
DD
= 12.5 Volts, I
DQ
= 300 mA,
P
out
= 38 dBm
Power Gain — 10.5 dB
Drain Efficiency — 55%
•
Capable of Handling 10:1 VSWR, @ 12.5 Vdc, 849 MHz, 38 dBm
•
RoHS Compliant
•
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel
MRF9582NT1
849 MHz, 38 dBm, 12.5 V
HIGH FREQUENCY
POWER TRANSISTOR
LDMOS FET
3
2
1
4
CASE 449 - 02, STYLE 1
PLD - 1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Drain - Gate Voltage (R
GS
= 1.0 MΩ)
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T
C
= 85°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
DGO
V
GS
I
D
P
D
T
stg
T
J
Value
17
17
4.0
1.5
10.5
- 65 to 150
150
Unit
Vdc
Vdc
Vdc
Adc
W
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction - to - Case
Symbol
R
θJC
Rating
1
Value
6
Unit
°C/W
Unit
°C
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Package Peak Temperature
260
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF9582NT1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C, unless otherwise noted)
Characteristic
Off Characteristics
Drain - Source Breakdown Voltage (V
GS
= 0, I
D
= 100 nAdc)
Drain - Source Leakage Current (V
DS
= 12.5 Vdc, V
GS
= 0)
Gate - Source Leakage Current (V
GS
= 5 Vdc, V
DS
= 0)
On Characteristics
Gate Threshold Voltage
Resistance Drain - Source (V
GS
= 5 Vdc, I
D
= 300 mA)
Dynamic Characteristics
Input Capacitance (V
DS
= 12.5 Vdc, V
GS
= 0, f = 1.0 MHz)
Output Capacitance (V
DS
= 12.5 Vdc, V
GS
= 0, f = 1.0 MHz)
Feedback Capacitance (V
DS
= 12.5 Vdc, V
GS
= 0, f = 1.0 MHz)
Typical Characteristics
Power Gain (V
DD
= 12.5 Vdc, P
in
= 27.5 dBm, f = 849 MHz)
Drain Efficiency (V
DD
= 12.5 Vdc, P
in
= 27.5 dBm, f = 849 MHz)
Output Power
G
ps
η
D
P
out
—
—
—
10.5
55
38
—
—
—
dB
%
dBm
C
iss
C
oss
C
rss
—
—
—
30.77
15.6
0.82
—
—
—
pF
pF
pF
V
GS
R
DS(on)
—
0.05
2.4
0.5
—
0.8
Vdc
Ω
V
(BR)DSS
I
DSS
I
GSS
—
—
—
45
—
—
—
100
100
Vdc
nAdc
nAdc
Symbol
Min
Typ
Max
Unit
MRF9582NT1
2
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
40
39.5
OUTPUT POWER (dBm)
13.75 V
39
38.5
38
37.5
37
820
11.25 V
P
in
= 27.5 dBm
T
A
= 25°C
V
g
= 2.4 V
830
835
840
845
850
855
f, FREQUENCY (MHz)
12.50 V
EFFICIENCY (%)
70
68
66
64
62
60
820
P
in
= 27.5 dBm
T
A
= 25°C
V
g
= 2.4 V
13.75 V
12.50 V
11.25 V
825
825
830
835
840
845
850
855
f, FREQUENCY (MHz)
Figure 1. Output Power versus Frequency
Figure 2. Efficiency versus Frequency
39
I
DQ
, QUIESCENT CURRENT (mA)
−35°C
400
350
300
250
200
150
100
820
−35°C
825
830
835
840
845
850
855
25°C
85°C
OUTPUT POWER (dBm)
38.8
38.6
25°C
38.4
38.2
38
820
85°C
P
in
= 27.5 dBm
V
DD
= 12.5 V
V
g
= 2.4 V
825
830
835
840
845
850
855
P
in
= 27.5 dBm
V
DD
= 12.5 V
V
g
= 2.4 V
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 3. Output Power versus Frequency
Figure 4. Quiescent Current versus Frequency
MRF9582NT1
RF Device Data
Freescale Semiconductor
3
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