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THM72V2010AG-60

产品描述2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
产品类别存储    存储   
文件大小2MB,共30页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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THM72V2010AG-60概述

2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE

THM72V2010AG-60规格参数

参数名称属性值
零件包装代码DIMM
针数168
Reach Compliance Codeunknow
访问模式FAST PAGE
最长访问时间60 ns
其他特性RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码R-XDMA-N168
内存密度150994944 bi
内存集成电路类型FAST PAGE DRAM MODULE
内存宽度72
功能数量1
端口数量1
端子数量168
字数2097152 words
字数代码2000000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织2MX72
输出特性3-STATE
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
认证状态Not Qualified
刷新周期2048
最大供电电压 (Vsup)3.47 V
最小供电电压 (Vsup)3.13 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子形式NO LEAD
端子位置DUAL
Base Number Matches1

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TOSHIBA
THM72V2010AG/ATG-60/70
PRELIMINARY
2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
Description
The THM72V2010AG/ATG is a 2,097,152 words by 72 bits dynamic RAM module which assembled 9 pcs of TC51V17800ANJ/ANT
on the printed circuit board. This module is optimized for application to the systems which are required high density and large capacity
such as main memory of the computers and as image memory systems, and to the others which are requested compact size.
Features
• 2,097,152 words by 72 bits organization
• Fast access time and cycle time
• Single power supply of 3.3V
±
5%
• Low Power
- 4,095mW MAX. Operating
- (THMxxxxxx-60)
- 3,470mW MAX. Operating
- (THMxxxxxx-70)
- 50.4mW MAX. Standby
• Read-Modify-Write, CAS before RAS refresh,
RAS-only refresh, Hidden refresh, and Fast
Page Mode capability
• All inputs and outputs TTL compatible
• 2,048 refresh cycles/32ms
• Package: 168pin Gold Contact
THM72V2010AG-x
SOJ type
THM72V2010ATG-x
TSOP type
Key Parameters
-60
t
RAC
t
AA
RAS Access
Time
Column
Address
Access Time
CAS Access
Time
Cycle Time
Fast Page
Mode Cycle
Time
60ns
-70
PD0
70ns
PD1
PD2
35ns
40ns
PD3
PD4
20ns
25ns
PD5
PD6
PD7
40ns
45ns
ID0
ID1
-60
“H”
“L”
“L”
“H”
“L”
“H”
“H”
“L”
V
SS
V
SS
-70
“H”
“L”
“L”
“H”
“L”
“L”
“H”
“L”
V
SS
V
SS
t
CAC
t
RC
t
PC
110ns 130ns
Note “H”: High Level (buffered)
“L”: Low Level (buffered)
1. This technical data may be controlled under U.S. Export Administration Regulations and may be subject to the approval of the U.S. Department of Commerce prior to export. Any export or re-export, directly or indi-
rectly, in contravention of the U.S. Export Administration Regulations is strictly prohibited.
2. LIFE SUPPORT POLICY
Toshiba products described in this document are not authorized for use as critical components in life support systems without the written consent of the appropriate officer of Toshiba America, Inc. Life support sys-
tems are either systems intended for surgical implant in the body or systems which sustain life.
A critical component in any component of a life support system whose failure to perform may cause a malfunction of the life support system, or may affect its safety or effectiveness.
3. The information in this document has been carefully checked and is believed to be reliable; however no responsibility can be assumed for inaccuracies that may not have been caught. All information in this data book
is subject to change without prior notice. Furthermore, Toshiba cannot assume responsibility for the use of any license under the patent rights of Toshiba or any third parties.
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC
.
1

THM72V2010AG-60相似产品对比

THM72V2010AG-60 THM72V2010AG THM72V2010AG-70 THM72V2010ATG-60 THM72V2010ATG-70
描述 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
零件包装代码 DIMM - DIMM DIMM DIMM
针数 168 - 168 168 168
Reach Compliance Code unknow - unknow unknow unknow
访问模式 FAST PAGE - FAST PAGE FAST PAGE FAST PAGE
最长访问时间 60 ns - 70 ns 60 ns 70 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH - RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码 R-XDMA-N168 - R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
内存密度 150994944 bi - 150994944 bi 150994944 bi 150994944 bi
内存集成电路类型 FAST PAGE DRAM MODULE - FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE
内存宽度 72 - 72 72 72
功能数量 1 - 1 1 1
端口数量 1 - 1 1 1
端子数量 168 - 168 168 168
字数 2097152 words - 2097152 words 2097152 words 2097152 words
字数代码 2000000 - 2000000 2000000 2000000
工作模式 ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C - 70 °C 70 °C 70 °C
组织 2MX72 - 2MX72 2MX72 2MX72
输出特性 3-STATE - 3-STATE 3-STATE 3-STATE
封装主体材料 UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY - MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified
刷新周期 2048 - 2048 2048 2048
最大供电电压 (Vsup) 3.47 V - 3.47 V 3.47 V 3.47 V
最小供电电压 (Vsup) 3.13 V - 3.13 V 3.13 V 3.13 V
标称供电电压 (Vsup) 3.3 V - 3.3 V 3.3 V 3.3 V
表面贴装 NO - NO NO NO
技术 CMOS - CMOS CMOS CMOS
温度等级 COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 NO LEAD - NO LEAD NO LEAD NO LEAD
端子位置 DUAL - DUAL DUAL DUAL
Base Number Matches 1 - 1 1 1
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