Preliminary
SIDC30D120F6
Fast switching diode chip in EMCON-Technology
FEATURES:
•
1200V EMCON technology 120 µm chip
•
soft, fast switching
•
low reverse recovery charge
•
small temperature coefficient
A
This chip is used for:
•
EUPEC power modules and
discrete devices
Applications:
•
SMPS, resonant applications,
drives
C
Chip Type
SIDC30D120F6
V
R
1200V
I
F
35A
Die Size
5.5 x 5.5 mm
2
Package
sawn on foil
Ordering Code
Q67050-A4184-
A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metallisation
Cathode metallisation
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
5.5 x 5.5
30.25 / 23.33
4.78 x 4.78
120
150
180
482 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al,
≤500µm
∅
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
µm
mm
deg
mm
2
Edited by INFINEON Technologies AI PS DD HV3, L 4185M, Edition 1, 8.01.2002
Preliminary
SIDC30D120F6
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current limited by
T
jmax
Single pulse forward current
(depending on wire bond configuration)
Symbol
V
RRM
I
F
I
FSM
I
FRM
T
j
,
T
s t g
Condition
Value
1200
35
Unit
V
t
P
= 10 ms sinusoidal
tbd
70
-55...+150
A
Maximum repetitive forward current
limited by T
jmax
Operating junction and storage
temperature
°C
Static Electrical Characteristics
(tested on chip),
T
j=25
°C,
unless otherwise specified
Parameter
Reverse leakage current
Cathode-Anode
breakdown Voltage
Forward voltage drop
Symbol
I
R
V
Br
V
F
Conditions
V
R
= 1 2 0 0 V
I
R
= 2 m A
I
F
= 3 5 A
T
j
= 2 5
°
C
T
j
= 2 5 ° C
T
j
= 2 5
°
C
1200
2.1
Value
min.
Typ.
max.
27
Unit
µA
V
V
Dynamic Electrical Characteristics
,
at
T
j
= 25
°C,
unless otherwise specified, tested at component
Parameter
Reverse recovery time
Symbol
t
rr1
t
rr2
Peak recovery current
I
RRM1
I
RRM2
Reverse recovery charge
Q
rr1
Q
rr2
Peak rate of fall of reverse di
r r 1
/dt
recovery current
di
r r 2
/dt
Softness
S1
S2
I
F
=35A
di/dt=A/
µs
V
R
=600V
I
F
=35A
di/dt= A/
µs
V
R
= 6 0 0 V
I
F
=35A
di/dt= A/
µs
V
R
= 6 0 0 V
I
F
=35A
di/dt=A/
µs
V
R
= 6 0 0 V
I
F
=35A
di/dt= A/
µs
V
R
= 6 0 0 V
Conditions
T
j
= 2 5 ° C
T
j
= 1 5 0 ° C
T
j
= 2 5 ° C
T
j
= 1 5 0 ° C
T
j
= 2 5
°
C
T
j
= 1 5 0
°
C
T
j
=
25
°
C
T
j
= 1 5 0
°
C
T
j
= 2 5
°
C
T
j
= 1 5 0
°
C
Value
min.
Typ.
tbd
max.
Unit
ns
tbd
A
tbd
nC
tbd
A /
µs
tbd
1
Edited by INFINEON Technologies AI PS DD HV3, L 4185M, Edition 1, 8.01.2002
Preliminary
SIDC30D120F6
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 4185M, Edition 1, 8.01.2002
Preliminary
SIDC30D120F6
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES /
EUPEC
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 4185M, Edition 1, 8.01.2002
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