VS-SD403C..C Series
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Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 430 A
FEATURES
• High power fast recovery diode series
• 1.0 μs to 1.5 μs recovery time
• High voltage ratings up to 1600 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
A-PUK (DO-200AA)
• Case style conform to JEDEC
®
A-PUK (DO-200AA)
• Maximum junction temperature 125 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
430 A
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
A-PUK (DO-200AA)
Single
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
t
rr
T
J
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
J
TEST CONDITIONS
VALUES
430
55
675
25
6180
6470
191
175
400 to 1600
1.0, 1.5
25
-40 to +125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-SD403C..S10C
08
10
12
VS-SD403C..S15C
14
16
V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
400
800
1000
1200
1400
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
1100
1300
1500
1700
35
I
RRM
MAXIMUM
AT T
J
= 125 °C
mA
Revision: 15-Jan-18
Document Number: 93175
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-SD403C..C Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS current
Maximum peak, one-cycle ,
non-repetitive forward current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
430 (210)
55 (75)
675
6180
6470
5200
Sinusoidal half wave,
initial T
J
= T
J
maximum
5445
191
175
135
123
1910
1.00
1.20
0.56
0.70
1.83
kA
2
s
V
m
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1350 A, T
J
= 25 °C; t
p
= 10 ms sinusoidal wave
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
trr
AT 25 % I
RRM
(μs)
1.0
1.5
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
750
dI/dt
(A/μs)
V
r
(V)
TYPICAL VALUES
AT T
J
= 125 °C
I
FM
trr
AT 25 % I
RRM
(μs)
2.4
2.9
Q
rr
(μC)
52
90
I
rr
(A)
33
44
dir
dt
t
rr
t
Q
rr
I
RM(REC)
S10
S15
25
-30
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.16
0.08
4900 (500)
70
UNITS
°C
K/W
N (kg)
g
A-PUK (DO-200AA)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.010
0.012
0.016
0.024
0.042
DOUBLE SIDE
0.011
0.013
0.016
0.024
0.042
RECTANGULAR CONDUCTION
SINGLE SIDE
0.008
0.013
0.018
0.025
0.042
DOUBLE SIDE
0.008
0.013
0.018
0.025
0.042
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 15-Jan-18
Document Number: 93175
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-SD403C..C Series
www.vishay.com
Vishay Semiconductors
130
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e (° C )
130
M a x im u m A llo w a b le He a t sin k T e m p e ra t ure (°C )
120
110
100
90
80
30°
70
0
50
100
1 50
2 00
2 50
A v e ra g e F o rw a r d C u rre n t (A )
60°
90°
1 20°
1 80°
C o nduc tio n An g le
S D 4 0 3 C ..C S e rie s
(S in g le Sid e C o o le d )
R
thJ- hs
(D C ) = 0 .1 6 K / W
120
110
100
90
80
70
60
50
40
0
100
30 °
SD 4 0 3 C ..C Se rie s
(D o u b le Sid e C o o le d )
R
thJ-h s
(D C ) = 0 .0 8 K / W
C o ndu c tio n Pe rio d
60°
90°
1 2 0°
4 00
1 8 0°
5 00
DC
600
7 00
2 00
30 0
A v e ra g e F o rw a r d C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
M a x im um A llo w a b le H e at sin k T e m p e ra tu re ( °C )
Maxim um Average Forw ard Pow er Loss (W )
120
110
100
C o ndu ctio n Pe rio d
800
S D 4 0 3 C ..C Se rie s
(S in gle Sid e C o o le d )
R
thJ-h s
(D C ) = 0 .1 6 K /W
700
600
500
400
300
200
100
0
0
50 100 150 200 250 300 350 400 450
Average Forward Curren t (A)
C o ndu c tio n Ang le
180°
120°
90°
60°
30°
RM S Limit
90
80
70
60
50
0
50
100
150
20 0
2 50
30 0
35 0
A v e ra g e F o r w a rd C u rr e n t (A )
30 °
60°
9 0°
1 2 0°
180 °
DC
SD403C..C Series
T
J
= 125°C
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
130
Maxim um Allowable Heatsink Tempera ture (°C )
M a x im um A v e ra g e Fo rw a rd Po w e r Lo ss (W )
120
110
100
90
80
30°
70
60
50
0
50 100 150 200 250 300 350 400 450
Average Forward Curren t (A)
60°
90°
120°
180°
C o nd uctio n A ng le
1 10 0
SD403C..C Series
(Doub le Side Cooled)
R
th J-hs
(DC) = 0.08 K/W
1 00 0
90 0
80 0
70 0
60 0
50 0
40 0
30 0
20 0
10 0
0
0
1 00
20 0
3 00
400
5 00
60 0
7 00
A v e ra g e F o rw a rd C u rre n t (A )
C o ndu ctio n Pe rio d
DC
1 8 0°
1 2 0°
90°
60°
30°
RM S Lim it
SD 4 0 3 C ..C S e r ie s
T
J
= 1 2 5° C
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Revision: 15-Jan-18
Document Number: 93175
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-SD403C..C Series
www.vishay.com
Vishay Semiconductors
1
T ra n sie n t T h e rm al Im pe d an c e Z
thJ-hs
( K / W )
SD 4 0 3 C ..C S e rie s
6 00 0
P e a k H a lf Sin e W a v e F o rw a rd C u rre n t (A )
5 50 0
5 00 0
4 50 0
4 00 0
3 50 0
3 00 0
2 50 0
2 00 0
1
A t A n y R a t e d Lo a d C o n d it io n A n d W it h
R a t e d V
RR M
A p p lie d Fo llo w in g S u rg e .
In it ia l T
J
= 1 2 5° C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
0 .1
S te a d y St a t e V a lu e
0. 01
R
t hJ-hs
= 0 .1 6 K /W
( S in g le Sid e C o o le d )
R
thJ- hs
= 0 .0 8 K /W
( D o ub le S id e C o o le d )
( D C O p e ra t io n )
0 .0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
10 0
S D 4 0 3 C ..C S e rie s
10
1 00
Num be r O f Equ al A m plitud e Ha lf Cy c le C urre nt Pulse s (N )
S q u a re W a v e P u lse D u ra tio n ( s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 1 - Thermal Impedance Z
thJ-hs
Characteristics
7000
Peak H alf Sine W ave Forwa rd Current (A)
6000
5000
4000
3000
2000
M a x im u m R e ve rse R e c o v e ry T im e - T rr ( µ s)
Maxim um Non Rep etitive Surge Current
Versus Pulse Train D uration .
Initial T = 125°C
J
No Voltage Reapplied
Rated V
RR M
Reapplied
2 .8
2 .6
2 .4
2 .2
40 0 A
SD 4 0 3 C ..S1 0 C Se rie s
T
J
= 1 2 5 ° C ; V r = 3 0 V
I
FM
= 7 50 A
Squa re Pulse
2
1 .8
1 .6
10
100
20 0 A
SD 403C..C Series
0 .1
Pulse Train Duration (s)
1
1000
0 .0 1
Rat e O f Fall O f Forw ard Current - d i/dt (A /µs)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Recovery Time Characteristics
1 0 0 00
M a xim um R e v e rse R e c o v e ry C h a rg e - Q rr (µ C )
T
J
= 2 5 °C
Ins tan ta ne o u s Fo rw ard C urr e nt ( A )
14 0
13 0
12 0
11 0
10 0
90
80
70
60
50
40
30
20
10
0
20
40
60
80
100
SD 4 0 3 C ..S1 0 C Se rie s
T
J
= 1 2 5 ° C ; V r = 3 0 V
200 A
4 00 A
I
FM
= 7 50 A
Squa re Pulse
T
J
= 1 2 5 °C
1000
1 00
SD 4 0 3 C ..C Se r ie s
10
0
1
2
3
4
5
6
7
In st an ta n e o us Fo rw ar d V o lta ge ( V )
R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 11 - Recovery Charge Characteristics
Revision: 15-Jan-18
Document Number: 93175
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-SD403C..C Series
www.vishay.com
Vishay Semiconductors
170
90
I
FM
= 750 A
M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( µC )
Maxim um Rev erse Recov ery Cur ren t - Irr (A)
80
70
60
50
40
30
20
10
160
150
140
130
120
110
100
90
80
70
60
50
0
20
I
FM
= 75 0 A
Sq uare Pulse
Squa re Pu lse
4 00 A
20 0 A
40 0 A
20 0 A
SD40 3C..S10C Series
T
J
= 12 5 °C; V r = 30V
10 20 30 4 0 50 60 7 0 80 9 0 10 0
SD 4 0 3 C ..S1 5 C Se rie s
T
J
= 1 2 5 ° C ; V r = 3 0 V
40
60
80
10 0
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Rate O f Fall O f Fo rw ard C urre nt - d i/dt ( A/µs)
Fig. 12 - Recovery Current Characteristics
Fig. 14 - Recovery Charge Characteristics
3 .5
M a x im u m R e v e rse R e c o v e ry T im e - T rr ( µ s)
S D 4 0 3 C ..S1 5 C S e rie s
T
J
= 1 2 5 °C ; V r = 3 0 V
3
I
FM
= 750 A
Sq uare Pulse
130
M a x im um Re v e rse Re c o v e ry C u rre n t - Irr (A )
120
110
100
90
80
70
60
50
40
30
20
10
1 0 20 3 0 40 5 0 60 70 80 9 0 10 0
SD 4 0 3 C ..S1 5 C S e rie s
T
J
= 1 2 5 °C ; V r = 3 0 V
2 00 A
40 0 A
I
FM
= 750 A
Squ are Pu lse
2 .5
400 A
2
2 00 A
1 .5
10
10 0
Rate O f Fall O f Fo rw ard C urren t - di/d t (A/µs)
R ate O f Fa ll O f Forw ard C urre nt - di/dt ( A/µs)
Fig. 13 - Recovery Time Characteristics
Fig. 15 - Recovery Current Characteristics
1E 4
20 jo u le s p e r p ulse
1
2
4
10
20 jo ule s p er pulse
1
0.2
0.1
0. 04
0.4
2
4
10
Pe a k Fo rw ard C u rre n t (A )
0 .4
1E 3
0.2
0 .1
0. 04
0 .02
1E 2
0 .01
SD 4 0 3 C..S1 0C Se rie s
T rape zo idal Pulse
T
J
= 1 2 5° C, V
R R M
= 8 0 0 V
d v/ dt = 1 0 0 0 V/ µs ; d i/ dt= 5 0 A / µs
tp
SD 40 3 C ..S1 0 C S e ri es
Si nu soi dal Pul se
T
J
= 1 2 5°C , V
RRM
= 8 0 0 V
d v/ d t = 10 0 0V / µs
tp
1E 1
1E 1
1 E2
1E3
1E 4
1E1
1 E2
1E3
1E4
P u lse B a se w id t h (µ s)
P ulse B a se w id t h (µ s)
Fig. 16 - Maximum Total Energy Loss Per Pulse Characteristics
Revision: 15-Jan-18
Document Number: 93175
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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