Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
INPUT
Z
o
= 50
W
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
-16 V
200 ns
50
1.0 k
-30 V
200
INPUT
Z
o
= 50
W
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
-30 V
200 ns
+15 V
-6.0 V
37
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
1N916
1.0 k
1.0 k
50
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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2
MMBT2907AWT1G, NSVMMBT2907AWT1G
TYPICAL CHARACTERISTICS
1000
T
J
= 150°C
hFE, DC CURRENT GAIN
25°C
100
- 55°C
V
CE
= 10 V
10
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
1000
Figure 3. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
-0.8
I
C
= -1.0 mA
-0.6
-10 mA
-100 mA
-500 mA
-0.4
-0.2
0
-0.005
-0.01
-0.02 -0.03 -0.05 -0.07 -0.1
-0.2
-0.3 -0.5 -0.7 -1.0
I
B
, BASE CURRENT (mA)
-2.0
-3.0
-5.0 -7.0 -10
-20 -30
-50
Figure 4. Collector Saturation Region
300
200
100
70
50
30
20
t
d
@ V
BE(off)
= 0 V
10
7.0
5.0
3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
I
C
, COLLECTOR CURRENT
t
r
500
V
CC
= -30 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
300
200
t
f
100
70
50
30
20
2.0 V
-200 -300 -500
10
7.0
5.0
-5.0 -7.0 -10
t′
s
= t
s
- 1/8 t
f
V
CC
= -30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
-20 -30
-50 -70 -100
-200 -300 -500
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
Figure 6. Turn−Off Time
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3
MMBT2907AWT1G, NSVMMBT2907AWT1G
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
1000
f
T
, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
V
CE
= 2 V
C, CAPACITANCE (pF)
C
ibo
100
100
10
C
obo
10
1
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1
0.1
1
10
100
REVERSE VOLTAGE (V)
Figure 7. Current−Gain − Bandwidth Product
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
150°C
25°C
−55°C
0.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
0.001
150°C
25°C
I
C
/I
B
= 10
−55°C
Figure 8. Capacitances
0.01
I
C
, COLLECTOR CURRENT (A)
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
150°C
25°C
−55°C
V
CE
= 1 V
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
0.1
1
I
C
, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Voltage vs. Collector
Current
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4
MMBT2907AWT1G, NSVMMBT2907AWT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
H
E
1
2
E
b
e
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
A
0.05 (0.002)
A2
L
c
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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Logic analyzers are widely used tools in digital design verification and debugging. They can verify the proper functioning of digital circuits and help users identify and troubleshoot faults. They ...[详细]