BUZ30A-H3045A在线购买

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BUZ30A-H3045A概述

MOSFET N-Ch 200V 21A D2PAK-2

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Infineon(英飞凌)
产品种类 Product Category	MOSFET
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	TO-263-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	21 A
Rds On - Drain-Source Resistance	100 mOhms
Vgs th - Gate-Source Threshold Voltage	2.1 V
Vgs - Gate-Source Voltage	20 V
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd-功率耗散 Pd - Power Dissipation	125 W
Channel Mode	Enhancement
资格 Qualification	AEC-Q100
系列 Packaging	Cut Tape
系列 Packaging	MouseReel
系列 Packaging	Reel
高度 Height	15.65 mm
长度 Length	10 mm
Transistor Type	1 N-Channel
宽度 Width	4.4 mm
Fall Time	90 ns
Rise Time	70 ns
工厂包装数量 Factory Pack Quantity	1000
Typical Turn-Off Delay Time	250 ns
Typical Turn-On Delay Time	30 ns
单位重量 Unit Weight	0.139332 oz

BUZ30A H3045A

. Halogen-free according to IEC61249-2-21

Pb-free

H3045A

PG-TO263-3

Yes

Rev. 2.2

2010-07-02

	BUZ30A-H3045A	BUZ30AH3045AATMA1
描述	MOSFET N-Ch 200V 21A D2PAK-2	MOSFET N-Ch 200V 21A D2PAK-2

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