Freescale Semiconductor
Technical Data
Document Number: MRF7S21150H
Rev. 1, 4/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1350 mA, P
out
= 44 Watts Avg., Full Frequency Band, IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 150 Watts CW
Output Power
•
P
out
@ 1 dB Compression Point
w
150 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S21150HR3
MRF7S21150HSR3
2110 - 2170 MHz, 44 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465- 06, STYLE 1
NI - 780
MRF7S21150HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S21150HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 147 W CW
Case Temperature 75°C, 45 W CW
Symbol
R
θJC
Value
(2,3)
0.33
0.37
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007, 2009. All rights reserved.
MRF7S21150HR3 MRF7S21150HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 348
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1350 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 1350 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.7 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.9
590
320
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
4.5
0.1
2
2.7
5.4
0.15
2.7
—
6.5
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1350 mA, P
out
= 44 W Avg., f = 2112.5 MHz and
f = 2167.5 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
16.5
29
5.7
—
—
17.5
31
6.1
- 37
- 15
19.5
—
—
- 35
-9
dB
%
dB
dBc
dB
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S21150HR3 MRF7S21150HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
MHz
—
10
—
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1350 mA, 2110 - 2170 MHz Bandwidth
Video Bandwidth @ 120 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 44 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 150 W CW
Average Group Delay @ P
out
= 150 W CW, f = 2140 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 150 W CW,
f = 2140 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
VBW
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
0.418
36.5
2.82
1.45
0.013
0.007
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dBm/°C
MRF7S21150HR3 MRF7S21150HSR3
RF Device Data
Freescale Semiconductor
3
R1
V
BIAS
C6
R2
C9
Z27
Z26
Z29
R3
RF
INPUT Z1
Z25
Z2 Z3
Z4
Z5
C1
C4
Z6 Z7
Z8
Z9
DUT
Z31
Z32
Z14
C12
C5
C3
Z10
Z11 Z12 Z13
Z15
Z16
Z17 Z18 Z19 Z20
RF
Z21 Z22 Z23 Z24 OUTPUT
Z28
+
Z30
C8
C11
V
SUPPLY
C2
R4
C10
C7
Z1
Z2
Z3
Z4*
Z5*
Z6
Z7
Z8
Z9
Z10
Z11
0.980″ x 0.138″ Microstrip
0.461″ x 0.066″ Microstrip
0.534″ x 0.458″ Microstrip
0.138″ x 0.126″ Microstrip
0.536″ x 0.126″ Microstrip
0.147″ x 0.126″ Microstrip
0.060″ x 0.513″ Microstrip
0.151″ x 0.630″ Microstrip
0.112″ x 0.630″ Microstrip
0.337″ x 0.957″ Microstrip
0.176″ x 0.957″ Microstrip
Z12
Z13
Z14
Z15*
Z16*
Z17*
Z18
Z19
Z20, Z21
Z22
Z23
0.178″ x 0.067″ Microstrip
0.039″ x 0.095″ Microstrip
0.079″ x 0.060″ Microstrip
0.168″ x 0.095″ Microstrip
0.113″ x 0.095″ Microstrip
0.128″ x 0.095″ Microstrip
0.079″ x 0.215″ Microstrip
0.020″ x 0.095″ Microstrip
0.070″ x 0.215″ Microstrip
0.392″ x 0.067″ Microstrip
0.370″ x 0.089″ Microstrip
Z24
Z25
Z26
Z27
Z28
Z29, Z31
Z30, Z32
PCB
0.096″ x 0.138″ Microstrip
0.335″ x 0.066″ Microstrip
0.069″ x 0.080″ Microstrip
0.466″ x 0.040″ Microstrip
R = 0.526″
α
= 60° Microstrip Butterfly
0.825″ x 0.066″ Microstrip
R = 0.526″
α
= 60° Microstrip Butterfly
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
* Variable for tuning
Figure 1. MRF7S21150HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21150HR3(HSR3) Test Circuit Component Designations and Values
Part
C1
C2, C3
C4, C12
C5
C6, C7, C8
C9, C10
C11
R1, R2
R3
R4
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Vishay
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Manufacturer
MRF7S21150HR3 MRF7S21150HSR3
4
RF Device Data
Freescale Semiconductor
V
GS
C8
V
DD
C6
R1
R2
R3
C11
C9
CUT OUT AREA
C2
C12 C5
C3
C4
C1
MRF7S21150H/S
Rev. 7
R4
C10
C7
Figure 2. MRF7S21150HR3(HSR3) Test Circuit Component Layout
MRF7S21150HR3 MRF7S21150HSR3
RF Device Data
Freescale Semiconductor
5
PCB设计
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