Si3460DV
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
(Ω)
0.027 at V
GS
= 4.5 V
0.032 at V
GS
= 2.5 V
0.038 at V
GS
= 1.8 V
I
D
(A)
6.8
6.3
5.7
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS directive 2002/95/EC
TSOP-6
Top View
1
3 mm
6
(1, 2, 5, 6) D
2
5
(3) G
3
4
2.85 mm
(4) S
Ordering Information:
Si3460DV-T1-E3 (Lead (Pb)-free)
Si3460DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.7
2.0
1.3
- 55 to 150
6.8
5.4
20
0.9
1.1
0.73
W
°C
5s
20
±8
5.1
4.1
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
45
90
25
Maximum
62.5
110
30
°C/W
Unit
Document Number: 71329
S09-0531-Rev. D, 06-Apr-09
www.vishay.com
1
Si3460DV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
g
= 6
Ω
0.5
15
30
70
30
40
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5.1 A
13.5
2.3
2.2
2.9
30
60
140
60
80
ns
Ω
20
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 5.1 A
V
GS
= 2.5 V, I
D
= 4.7 A
V
GS
= 1.8 V, I
D
= 2 A
V
DS
= 10 V, I
D
= 5.1 A
I
S
= 1.7 A, V
GS
= 0 V
20
0.023
0.027
0.032
25
0.8
1.2
0.027
0.032
0.038
S
V
Ω
0.45
± 100
1
5
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 5 V thru 2 V
I
D
- Drain Current (A)
20
T
C
= - 55 °C
16
I
D
- Drain Current (A)
16
25 °C
125 °C
12
1.5 V
8
12
8
4
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4
0
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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2
Document Number: 71329
S09-0531-Rev. D, 06-Apr-09
Si3460DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.06
2000
0.05
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1600
V
GS
= 1.8 V
V
GS
= 2.5 V
C
iss
1200
0.04
0.03
800
0.02
V
GS
= 4.5 V
0.01
400
C
rss
C
oss
0.00
0
4
8
12
16
20
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
V
DS
= 10 V
I
D
= 5.1 A
4
R
DS(on)
- On-Resistance
1.4
1.6
V
GS
= 4.5 V
I
D
= 5.1 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
(Normalized)
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
20
0.06
On-Resistance vs. Junction Temperature
10
I
S
- Source Current (A)
R
DS(on)
- On-Resistance (Ω)
T
J
= 150 °C
0.05
0.04
I
D
= 5.1 A
0.03
T
J
= 25 °C
0.02
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71329
S09-0531-Rev. D, 06-Apr-09
www.vishay.com
3
Si3460DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.2
30
0.1
I
D
= 1 mA
V
GS(th)
Variance (V)
0.0
Power (W)
24
18
T
A
= 25 °C
12
- 0.1
- 0.2
6
- 0.3
- 0.4
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
10
- 2
10
- 1
1
Time (s)
10
100
600
Threshold Voltage
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Single Pulse Power
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71329.
www.vishay.com
4
Document Number: 71329
S09-0531-Rev. D, 06-Apr-09
Package Information
Vishay Siliconix
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
e1
e1
5
4
6
5
4
E
1
1
E
1
E
1
E
2
3
-B-
2
3
-B-
e
b
0.15 M C B A
e
b
0.15 M C B A
5-LEAD TSOP
-A-
6-LEAD TSOP
4x 1
R
A
2
A
R
0.17 Ref
c
L
2
D
Gauge Plane
Seating
Plane
0.08
C
Seating
Plane
L
4x 1
(L
1
)
-C-
A
1
MILLIMETERS
Dim
A
A
1
A
2
b
c
D
E
E
1
e
e
1
L
L
1
L
2
R
Min
0.91
0.01
0.90
0.30
0.10
2.95
2.70
1.55
INCHES
Min
0.036
0.0004
0.035
0.012
0.004
0.116
0.106
0.061
Nom
-
-
-
0.32
0.15
3.05
2.85
1.65
0.95 BSC
Max
1.10
0.10
1.00
0.45
0.20
3.10
2.98
1.70
Nom
-
-
0.038
0.013
0.006
0.120
0.112
0.065
0.0374 BSC
Max
0.043
0.004
0.039
0.018
0.008
0.122
0.117
0.067
1.80
0.32
1.90
-
0.60 Ref
0.25 BSC
2.00
0.50
0.071
0.012
0.075
-
0.024 Ref
0.010 BSC
0.079
0.020
0.10
0
-
4
-
8
0.004
0
-
4
7 Nom
-
8
7 Nom
1
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
Document Number: 71200
18-Dec-06
www.vishay.com
1
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