74VHCT04A
HEX INVERTER
s
s
s
s
s
s
s
s
s
s
HIGH SPEED: t
PD
= 4.7 ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 2
µA
(MAX.) at T
A
=25°C
COMPATIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN.), V
IL
= 0.8V (MAX)
POWER DOWN PROTECTION ON INPUTS
& OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8 mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 04
IMPROVED LATCH-UP IMMUNITY
LOW NOISE: V
OLP
= 0.8V (MAX.)
SOP
TSSOP
Table 1: Order Codes
PACKAGE
SOP
TSSOP
DESCRIPTION
The 74VHCT04A is an advanced high-speed
CMOS HEX INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provides high noise
immunity and stable output.
Figure 1: Pin Connection And IEC Logic Symbols
te
le
so
b
O
ro
P
uc
d
s)
t(
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V since all
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
O
-
so
b
t
le
r
P
e
du
o
T&R
s)
t(
c
74VHCT04AMTR
74VHCT04ATTR
December 2004
Rev. 4
1/11
74VHCT04A
Figure 2: Input Equivalent Circuit
Table 2: Pin Description
PIN N°
1, 3, 5, 9, 11,
13
2, 4, 6, 8, 10,
12
7
14
SYMBOL
1A to 6A
1Y to 6Y
GND
V
CC
NAME AND FUNCTION
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
Table 3: Truth Table
A
L
H
Y
H
L
Table 4: Absolute Maximum Ratings
Symbol
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage (see note 1)
DC Output Voltage (see note 2)
DC Input Diode Current
DC Output Diode Current
DC Output Current
Storage Temperature
Lead Temperature (10 sec)
Parameter
I
CC
or I
GND
DC V
CC
or Ground Current
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) V
CC
= 0V
2) High or Low State
Table 5: Recommended Operating Conditions
Symbol
V
CC
V
I
V
O
V
O
T
op
dt/dv
Parameter
Value
4.5 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
-55 to 125
0 to 20
Unit
V
V
V
V
°C
ns/V
te
le
so
b
O
Supply Voltage
Input Voltage
r
P
od
uc
)-
(s
t
b
O
so
t
le
r
P
e
Value
±
20
±
25
±
50
du
o
s)
t(
c
Unit
V
V
V
V
mA
mA
mA
mA
°C
°C
-0.5 to +7.0
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
-65 to +150
300
Output Voltage (see note 1)
Output Voltage (see note 2)
Operating Temperature
Input Rise and Fall Time (see note 3) (V
CC
= 5.0
±
0.5V)
1) V
CC
= 0V
2) High or Low State
3) V
IN
from 0.8V to 2V
2/11
74VHCT04A
Table 6: DC Specifications
Test Condition
Symbol
Parameter
V
CC
(V)
4.5 to
5.5
4.5 to
5.5
4.5
4.5
4.5
4.5
0 to
5.5
5.5
5.5
0
I
O
=-50
µA
I
O
=-8 mA
I
O
=50
µA
I
O
=8 mA
V
I
= 5.5V or GND
V
I
= V
CC
or GND
One Input at 3.4V,
other input at V
CC
or GND
V
OUT
= 5.5V
T
A
= 25°C
Min.
2
0.8
4.4
3.94
0.0
0.1
0.36
±
0.1
2
1.35
4.5
4.4
3.8
0.1
0.44
±
1.0
Typ.
Max.
Value
-40 to 85°C
Min.
2
0.8
4.4
3.7
0.1
0.55
Max.
-55 to 125°C
Min.
2
0.8
Max.
V
V
V
Unit
V
IH
V
IL
V
OH
V
OL
I
I
I
CC
+I
CC
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
Additional Worst
Case Supply
Current
Output Leakage
Current
I
OPD
Table 7: AC Electrical Characteristics
(Input t
r
= t
f
= 3ns)
Test Condition
Symbol
Parameter
V
CC
(*)
C
L
(V)
(pF)
t
PLH
t
PHL
Propagation Delay
Time
(*) Voltage range is 5.0V
±
0.5V
Table 8: Capacitive Characteristics
Test Condition
T
A
= 25°C
Min.
Typ.
4
14
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
Symbol
te
le
so
b
O
Parameter
Input Capacitance
Power Dissipation
Capacitance
(note 1)
r
P
5.0
5.0
od
15
50
uc
)-
(s
t
b
O
Typ.
4.7
5.5
so
0.5
Max.
6.7
7.7
t
le
Min.
1.0
1.0
ro
P
e
20
1.5
5.0
du
±
1.0
20
1.5
5.0
s)
t(
c
V
µA
µA
mA
µA
Value
-40 to 85°C
Max.
7.5
8.5
-55 to 125°C
Min.
1.0
1.0
Max.
7.5
8.5
ns
Unit
T
A
= 25°C
Min.
C
IN
C
PD
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/6 (per gate)
3/11
74VHCT04A
Table 9: Dynamic Switching Characteristics
Test Condition
Symbol
Parameter
V
CC
(V)
5.0
T
A
= 25°C
Min.
Typ.
0.3
-0.8
C
L
= 50 pF
2.0
-0.3
V
Max.
0.8
Value
-40 to 85°C
Min.
Max.
-55 to 125°C
Min.
Max.
Unit
V
OLP
V
OLV
V
IHD
V
ILD
Dynamic Low
Voltage Quiet
Output (note 1, 2)
Dynamic High
Voltage Input
(note 1, 3)
Dynamic Low
Voltage Input
(note 1, 3)
5.0
5.0
0.8
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
Figure 3: Test Circuit
C
L
=15/50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
te
le
so
b
O
ro
P
uc
d
s)
t(
O
-
so
b
t
le
r
P
e
du
o
s)
t(
c
4/11
74VHCT04A
Figure 4: Waveform - Propagation Delays
(f=1MHz; 50% duty cycle)
te
le
so
b
O
ro
P
uc
d
s)
t(
O
-
so
b
t
le
r
P
e
du
o
s)
t(
c
5/11
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
