NDF08N60Z
N-Channel Power MOSFET
600 V, 0.95
W
Features
•
•
•
•
•
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
DSS
600 V
R
DS(ON)
(MAX) @ 3.5 A
0.95
W
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Continuous Drain Current R
qJC
(Note 1)
Continuous Drain Current R
qJC
T
A
= 100°C (Note 1)
Pulsed Drain Current,
V
GS
@ 10 V
Power Dissipation
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
I
D
= 7.5 A
ESD (HBM)
(JESD 22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H.
≤
30%,
T
A
= 25°C) (Figure 14)
Peak Diode Recovery (Note 2)
Continuous Source Current (Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
V
ISO
NDF08N60Z
600
8.4
5.3
30
36
±30
235
4000
4500
Unit
V
A
A
A
W
V
mJ
V
V
NDF08N60ZG,
NDF08N60ZH
TO−220FP
CASE 221AH
G (1)
N−Channel
D (2)
S (3)
MARKING
DIAGRAM
dv/dt
I
S
T
L
T
J
, T
stg
4.5
7.5
260
−55
to 150
V/ns
A
°C
°C
NDF08N60ZG
or
NDF08N60ZH
AYWW
Gate
Source
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I
D
v
7.5 A, di/dt
≤
200 A/ms, V
DD
≤
BV
DSS
, T
J
≤
150°C.
Drain
A
Y
WW
G, H
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2013
January, 2013
−
Rev. 4
1
Publication Order Number:
NDF08N60Z/D
NDF08N60Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State (Note 3)
3. Insertion mounted
Symbol
R
qJC
R
qJA
NDF08N60Z
3.5
50
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature Co-
efficient
Drain−to−Source Leakage Current
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C,
I
D
= 1 mA
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±20
V
V
GS
= 10 V, I
D
= 3.5 A
V
DS
= V
GS
, I
D
= 100
mA
V
DS
= 15 V, I
D
= 3.5 A
25°C
125°C
I
GSS
R
DS(on)
V
GS(th)
g
FS
C
iss
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
C
oss
C
rss
Q
g
V
DD
= 300 V, I
D
= 7.5 A,
V
GS
= 10 V
Q
gs
Q
gd
V
GP
R
g
t
d(on)
V
DD
= 300 V, I
D
= 7.5 A,
V
GS
= 10 V, R
G
= 5
W
t
r
t
d(off)
t
f
913
105
20
20
4
10
3.0
0.82
3.9
6.3
1140
129
30
39
7.5
21
6.2
1.6
14
22
36
15
1370
160
40
58
11.5
31
V
W
ns
nC
BV
DSS
DBV
DSS
/
DT
J
I
DSS
600
0.6
1
50
±10
0.95
4.5
mA
W
V
S
pF
V
V/°C
mA
Test Conditions
Symbol
Min
Typ
Max
Unit
Gate−to−Source Forward Leakage
ON CHARACTERISTICS
(Note 4)
Static Drain−to−Source
On−Resistance
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
Output Capacitance (Note 5)
Reverse Transfer Capacitance
(Note 5)
Total Gate Charge (Note 5)
Gate−to−Source Charge (Note 5)
Gate−to−Drain (“Miller”) Charge
(Note 5)
Plateau Voltage
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 7.5 A, V
GS
= 0 V
V
GS
= 0 V, V
DD
= 30 V
I
S
= 7.5 A, di/dt = 100 A/ms
V
SD
t
rr
Q
rr
320
2.2
1.6
V
ns
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Width
≤
380
ms,
Duty Cycle
≤
2%.
5. Guaranteed by design.
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2
NDF08N60Z
TYPICAL CHARACTERISTICS
20
18
I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
0
0
5
10
5.5 V
5.0 V
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
6.0 V
V
GS
= 10 V
7.0 V
6.5 V
I
D
, DRAIN CURRENT (A)
16
20
18
16
14
12
10
8
6
4
2
0
3
4
5
6
T
J
= 150°C
T
J
= 25°C
T
J
=
−55°C
7
8
9
10
V
DS
= 25 V
Figure 1. On−Region Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
I
D
= 3.5 A
T
J
= 25°C
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0
V
GS
= 10 V
T
J
= 25°C
10.0
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate−to−Source
Voltage
BV
DSS
, NORMALIZED BREAKDOWN VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
1.15
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
I
D
= 3.5 A
V
GS
= 10 V
I
D
= 1 mA
1.10
1.05
1.00
0.95
0.90
150
−50
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
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3
Figure 6. BV
DSS
Variation with Temperature
NDF08N60Z
TYPICAL CHARACTERISTICS
100
2750
2500
C, CAPACITANCE (pF)
2250
2000
1750
1500
1250
1000
750
500
250
0.1
0
50 100 150 200 250 300 350 400 450 500 550 600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
0.01
0.1
1
10
100
C
rss
C
oss
C
iss
I
DSS
, LEAKAGE (mA)
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
10
T
J
= 150°C
1
T
J
= 125°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
Q
T
V
DS
V
GS
Q
GS
Q
GD
300
250
200
150
V
DS
= 300 V
I
D
= 7.5 A
T
J
= 25°C
100
50
0
40
0
4
8
12
16
20
24
28
32
36
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
Q
g
, TOTAL GATE CHARGE (nC)
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 300 V
I
D
= 7.5 A
V
GS
= 10 V
t, TIME (ns)
100
10.0
t
d(off)
t
r
t
f
t
d(on)
T
J
= 150°C
1.0
25°C
125°C
−55°C
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
0.3
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
350
1.2
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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4
NDF08N60Z
100
V
GS
v
30 V
SINGLE PULSE
T
C
= 25°C
100
ms
1 ms
10 ms
1
dc
10
ms
I
D
, DRAIN CURRENT (A)
10
0.1
0.01
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1000
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF08N60Z
10
DUTY CYCLE = 0.5
R(t) (C/W)
1
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
R
qJC
= 3.5°C/W
Steady State
1E+02
1E+03
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case) for NDF08N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Order Number
NDF08N60ZG
NDF08N60ZH
Package
TO−220FP
(Pb−Free, Halogen−Free)
TO−220FP
(Pb−Free, Halogen−Free)
Shipping
50 Units / Rail
50 Units / Rail
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5
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