BT136
Absolute maximum ratings
Parameter
peak repetitive off-stage voltage
on-state RMS current
NON repetitive surge peak on-state current
critical rate of rise on-state current
peak gate current
average gate power dissipation
storage temperature range
operating junction temperature range
Symbol
V
DRM
, V
RRM
I
T
(RMS)
I
TSM
dI/dt (Q
1-3
)
I
GM
P
G
(AV)
Tstg
Tj
Value
600
4
25
50
2
0.5
-40 to +150
125
Unit
V
A
A
A/ s
A
W
o
o
Test condition
TL<66ºC
Tp=20ms, Tj=25 ºC
I
TM
=20A, T
G
=0.2A
C
C
Electrical characteristics ( Tj=25ºC) unless otherwise specified
Symbol
Parameter
I
GT
gate trigger current
Value
<10
<10
<10
<25
Unit
mA
mA
mA
mA
V
mA
V/ s
V
mA
ºC/W
Test condition
T2+G+ V
D
=12V, I
T
=0.1A
T2+G-
T2-G-
T2-G+
V
D
=12V, I
T
=0.1A
V
D
=12V, I
T
=0.1A
V
D
=12V, I
T
=0.1A
gate trigger voltage
hold current
critical rate of rise off-state voltage
on-state voltage
off-state leakage current
thermal resistance
V
GT
I
H
dv/dt
V
TM
I
DRM
Rth(j-a)
Rth(j-c)
<1.5
<30
>50
<1.7
<0.5
60
<3.7
V
D
=12V, I
T
=0.1A
V
D
=12V, I
T
=0.1A
V
D
=67%V
DRM
I
T
=5A
V
D
=V
DRM
; Tj=125
o
C
2017-03
REV:O38
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