1N914-TR: 产品描述Diodes - General Purpose, Power, Switching 100V Io/150mA; 产品类别半导体分立半导体; 文件大小735KB，共7页; 制造商Central Semiconductor

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1N914-TR概述

Diodes - General Purpose, Power, Switching 100V Io/150mA

1N914-TR规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Central Semiconductor
产品种类 Product Category	Diodes - General Purpose, Power, Switching
RoHS	In Transition
产品 Product	Switching Diodes
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	DO-35
Peak Reverse Voltage	100 V
Max Surge Current	2000 mA
If - Forward Current	150 mA
Configuration	Common Cathode
Recovery Time	4 ns
Vf - Forward Voltage	1 V
Ir - Reverse Current	25 nA
最小工作温度 Minimum Operating Temperature	- 65 C
最大工作温度 Maximum Operating Temperature	+ 200 C
系列 Packaging	Cut Tape
系列 Packaging	Reel
端接类型 Termination Style	Axial
Maximum Diode Capacitance	4 pF
Pd-功率耗散 Pd - Power Dissipation	500 mW (1/2 W)
工厂包装数量 Factory Pack Quantity	10000
单位重量 Unit Weight	0.004833 oz

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1N4148

SILICON SWITCHING DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 1N4148 is a high

speed switching diode manufactured in a DO-35

hermetically sealed glass case. The 1N4148 is a drop

in replacement for the 1N914.

MARKING: FULL PART NUMBER

DO-35 CASE

MAXIMUM RATINGS:

(TA=25°C)

Peak Repetitive Reverse Voltage

Peak Working Reverse Voltage

Average Forward Current

DC Forward Current

Peak Forward Surge Current, tp=1.0μs

Power Dissipation

Operating and Storage Junction Temperature

SYMBOL

VRRM

VRWM

IFSM

TJ, Tstg

100

150

200

2.0

500

-65 to +200

UNITS

°C

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

VR=20V

BVR

IR=1.0mA

100

BVR

trr

IR=100μA

IF=10mA

VR=0, f=1.0MHz

VR=6.0V, IF=10mA, Irr=1.0mA, RL=100Ω

MAX

UNITS

1.0

4.0

R1 (23-November 2015)

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