REVISIONS
LTR
A
DESCRIPTION
Added Arrhenius equation for unbiased bake under margin test
method A, back end margin test step C. Corrected military part
numbers for device types 01 and 02. Technical changes made to
1.2.2, table I, figure 1, figure 2, figure 4, figure 5, 4.3.1, and table II.
Added vendor CAGE 34649 for device type 05. Editorial changes
throughout.
Add device type 08 for vendor CAGE number 66579. Add vendor
CAGE number 34335 to the drawing as a source of supply for the 08
device with changes to table I. Deleted programming cycle timing
waveform and table III from drawing. Also deleted ESDS from
drawing. Editorial changes throughout.
Deleted vendor CAGE number 34335 as a source of supply for device
type 08. Added vendor CAGE number 34335 as a source of supply
for device types 01 through 07. Deleted figure 5. Editorial changes
throughout.
Changes in accordance with NOR 5962-R079-95.
Added provisions for QD certification. Added CAGE 0C7V7 to
drawing as a source of supply for device type 07. Updated boilerplate.
- glg
Boilerplate update, part of 5 year review. ksr
DATE (YR-MO-DA)
89-01-19
APPROVED
M. A. Frye
B
89-10-30
M. A. Frye
C
90-02-26
M. A. Frye
D
E
95-02-15
99-12-03
M. A. Frye
Raymond Monnin
F
06-09-29
Raymond Monnin
The original first page of this drawing has been replaced.
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
F
1
F
2
F
3
F
4
F
5
F
6
F
7
F
8
F
9
F
10
F
11
PREPARED BY
James E. Jamison
CHECKED BY
Charles Reusing
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
APPROVED BY
Michael A. Frye
DRAWING APPROVAL DATE
87-10-23
MICROCIRCUIT, MEMORY, DIGITAL,
CMOS, 16K X 8-BIT ULTRA VIOLET
ERASABLE PROGRAMMABLE READ
ONLY MEMORY (UVEPROM),
MONOLITHIC SILICON
SIZE
A
SHEET
CAGE CODE
AMSC N/A
REVISION LEVEL
F
67268
1 OF
11
5962-87661
5962-E646-06
DSCC FORM 2233
APR 97
.
1. SCOPE
1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in
accordance with MIL-PRF-38535, appendix A.
1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example:
5962-87661
01
X
A
Drawing number
Device type
(see 1.2.1)
Case outline
(see 1.2.2)
Lead finish
(see 1.2.3)
1.2.1 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
04
05
06
07
08
Generic number 1/
27C128
27C128
27C128
27C128
27C128
27C128
27C128
27C128
Circuit function
16K x 8-bit UVEPROM
16K x 8-bit UVEPROM
16K x 8-bit UVEPROM
16K x 8-bit UVEPROM
16K x 8-bit UVEPROM
16K x 8-bit UVEPROM
16K x 8-bit UVEPROM
16K x 8-bit UVEPROM
Access time
90 ns
120 ns
150 ns
170 ns
200 ns
250 ns
300 ns
70 ns
1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Y
Descriptive designator
GDIP1-T28 or CDIP2-T28
CQCC1-N32
Terminals
28
32
Package style
dual-in-line package 1/
rectangular leadless chip carrier
1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.
1.3 Absolute maximum ratings.
2/
-0.6 V dc to 6.25 V dc
-0.6 V dc to 14.0 V dc
-0.6 V dc to 6.25 V dc
-0.6 V dc to 13.5 V dc
-0.6 V dc to V
CC
+ 1.0 V dc
-65°C to +150°C
300 mW
+300°C
See MIL-STD-1835
+150°C 3/
10 years minimum
Supply voltage range (V
CC
) 2/ .....................................................
Supply voltage range (V
PP
) 2/ .....................................................
All input voltage range except A
9
2/ ..........................................
Input voltage range (A
9
) 2/ ..........................................................
Output voltage range 2/ ..............................................................
Storage temperature range ........................................................
Power dissipation ........................................................................
Lead temperature (soldering, 10 seconds) ..................................
Thermal resistance, junction-to-case (θ
JC
) ...................................
Junction temperature (T
J
) ..........................................................
Data retention ............................................................................
1.4 Recommended operating conditions.
Supply voltage range (V
CC
) 4/ ....................................................
Supply voltage range (V
PP
) 5/ .....................................................
High level input voltage range (V
IH
)..............................................
High level input voltage range (V
IH
)..............................................
Low level input voltage range (V
IL
) .............................................
Low level input voltage range (V
IL
) .............................................
Case operating temperature range (T
C
) ......................................
1/
2/
3/
4/
4.5 V dc to 5.5 V dc
4.5 V dc to 5.5 V dc
2.0 V dc to 6.5 V dc (TTL)
V
CC
-0.2 V dc to V
CC
+0.2 V dc (CMOS)
-0.1 V dc to 0.8 V dc (TTL)
GND -0.2 to GND +0.2 V dc (CMOS)
-55°C to +125°C
Lid shall be transparent to permit ultraviolet light erasure.
Under absolute maximum ratings, voltages are with respect to GND.
Maximum junction temperature may be increased to +175°C during burn-in and steady-state life.
V
CC
must be applied before or at the same time as V
PP
and removed after or at the same time as V
PP
. The device must
not be inserted into or removed from the board when V
PP
or V
CC
is applied.
5/ V
PP
can be connected to V
CC
directly (except in the program mode). V
CC
supply current in this case would be I
CC
+ I
PP
.
During programming, V
PP
must be maintained at 12.5 V (±0.5 V).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-87661
SHEET
F
2
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil
or from
the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-
JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer
Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-
PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying
activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan
may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device.
These modifications shall not affect the PIN as described herein. A "Q" or "QML" certification mark in accordance with MIL-
PRF-38535 is required to identify when the QML flow option is used.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535, appendix A and herein.
3.2.1 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.2 Truth table. The truth table shall be as specified on figure 2.
3.2.2.1 Unprogrammed devices. The truth table for unprogrammed devices shall be as specified on figure 2.
3.2.2.2 Programmed devices. The requirements for supplying programmed devices are not part of this drawing.
3.2.3 Case outlines. The case outlines shall be in accordance with 1.2.2 herein.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are described in table I.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-87661
SHEET
F
3
TABLE I. Electrical performance characteristics.
Test
│
│Symbol
│
│
│
│
│V
OH
│
│
│V
OL
│
│
│I
I
│
│
│I
O
│
│
│I
PP1
│
│
│I
PP2
│
│
│
│
│I
CC1
│
│
│
│
│
│
│
│
│
│I
CC2
│
│
│
│
│
│I
CC3
│
│
│
│
│
│C
IN
│
│
│C
OUT
│
│
│
│
│
│
│
Conditions
│
-55°C < T
C
< +125°C
│
4.5 V < V
CC
< 5.5 V
│
unless otherwise specified
│
│
I
OH
= -400
µA
│
│
│
I
OL
= 2.1 mA
│
│
│
V
I
= 0 V to 5.5 V
│
│
│
V
O
= 0 V to V
CC
│
│
│
V
PP
= V
CC
= 5.5 V
│
│
│
V
PP
= 13 V
│
│
│
│
│
V
CC
= 5.5 V, CE = V
IL
,
│
f = 1/t
AVQV
,
│
0
1
-0
8
= 0 mA
│
│
│
│
│
│
│
│
V
CC
= 5.5 V, CE = 2.0 V,
│
f=0
│
│
│
│
│
V
CC
= 5.5 V, CE = V
CC
,
│
f=0
│
│
│
│
│
V
I
= 0 V, f = 1 MHz,
│
see 4.3.1c
│
│
V
O
= 0 V, f = 1 MHz,
│
see 4.3.1c
│
│
│
see 4.3.1e
│
│
│
Device
│
types
│
│
│
│
All
│
│
│
All
│
│
│
All
│
│
│
All
│
│
│
All
│
│
│
01-07
│
│
08
│
│
│03.04,
│05,06,
│07
│
│08
│
│01
│
│02
│
│
01-07
│
│
│
08
│
│
│01-07
│
│
│
08
│
│
│
All
│
│
│
All
│
│
│
│
All
│
│
│
│
Group A
│
Limits
│subgroups │
│
│
│
Min
│
Max
│
│
│
│
│
│
│
1,2,3
│
2.4
│
│
│
│
│
│
│
│
1,2,3
│
│
0.45
│
│
│
│
│
│
│
1,2,3
│
│±10
│
│
│
│
│
│
│
1,2,3
│
│±10
│
│
│
│
│
│
│
1,2,3
│
│
100
│
│
│
│
│
│
│
1
│
│
50
│
│
│
│
│
│
60
│
│
│
│
│
│
│
1,2,3
│
│
25
│
│
│
│
│
│
│
│
│
│
│
85
│
│
│
│
│
│
70
│
│
│
│
│
│
│
60
│
│
│
│
1,2,3
│
│
3.0
│
│
│
│
│
│
│
│
│
200
│
│
│
│
│
│
│
1,2,3
│
│
300
│
│
│
│
│
│
│
│
│
500
│
│
│
│
│
│
│
4
│
│
10
│
│
│
│
│
│
│
│
│
14
│
4
│
│
│
│
│
│
│
│
│7,8A,8B │
│
│
│
│
│
│
Unit
│
│
│
│
│
V
│
│
│
V
│
│
│
µA
│
│
│
µA
│
│
│
µA
│
│
│
mA
│
│
│
│
│
mA
│
│
│
│
│
│
│
│
│
│
mA
│
│
│
│
│
│
µA
│
│
│
│
│
│
pF
│
│
│
pF
│
│
│
│
│
High level output
voltage
Low level output
voltage
Input current
(leakage)
Output current
(leakage)
V
PP
supply current
V
PP
supply current
(during program
pulse) 1/
Operating supply
current (active)
Standby power supply
current (TTL)
Standby power supply
current (CMOS)
Input capactiance
Output capacitance
Functional tests
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-87661
SHEET
F
4
TABLE I. Electrical performance characteristics - Continued.
Test
│
│Symbol
│
│
│
│
│t
AVQV
│
│
│
│
│
│
│
│
│t
ELQV
│
│
│
│
│
│
│
│
│t
OLQV
│
│
│
│
│
│
│
│t
EHQZ
,
│t
OHQZ
│
│
│
│
│
│
│
│
│t
EHQV
,
│t
OHQV
│
│
│
Conditions
│
-55°C < T
C
< +125°C
│
4.5 V < V
CC
< 5.5 V
│
unless otherwise specified
│
│
See figures 3 and 4
│
│
│
│
│
│
│
│
│
See figures 3 and 4
│
│
│
│
│
│
│
│
│
See figures 3 and 4
│
│
│
│
│
│
│
│
See figures 3 and 4
│
│
│
│
│
│
│
│
│
│
See figures 3 and 4
│
│
│
│
Device
│
types
│
│
│
│
01
│
02
│
03
│
04
│
05
│
06
│
07
│
08
│
│
01
│
02
│
03
│
04
│
05
│
06
│
07
│
08
│
│
01,02
│
03,04
│
05
│
06
│
07
│
08
│
│
│
01,02
│
03,04
│
│
│
05,06
│
│
07
│
│
08
│
│
All
│
│
│
│
│
Group A
│
Limits
│subgroups │
│
│
│
Min
│
Max
│
│
│
│
│
│
│
9,10,11
│
│
90
│
│
│
120
│
│
│
150
│
│
│
170
│
│
│
200
│
│
│
250
│
│
│
300
│
│
│
70
│
│
│
│
9,10,11
│
│
90
│
│
│
120
│
│
│
150
│
│
│
170
│
│
│
200
│
│
│
250
│
│
│
300
│
│
│
70
│
│
│
│
9,10,11
│
│
50
│
│
│
70
│
│
│
75
│
│
│
100
│
│
│
120
│
│
│
25
│
│
│
│
│
│
│
9,10,11
│
│
50
│
│
│
│
│
│
│
│
│
│
│
60
│
│
│
│
│
│
105
│
│
│
│
│
│
│
25
│
│
│
│
9,10,11
│
0
│
│
│
│
│
│
│
│
│
Unit
│
│
│
│
│
ns
│
│
│
│
│
│
│
│
│
ns
│
│
│
│
│
│
│
│
│
ns
│
│
│
│
│
│
│
│
ns
│
│
│
│
│
│
│
│
│
│
ns
│
│
Address access time
2/
Chip enable access
time 2/
Output enable access
time 2/
CE or OE disable to
output in high Z 1/
CE or OE enable to
output valid 1/
1/
2/
May not be tested, but shall be guaranteed to the limits specified in table I.
For all switching characteristics and timing measurements, inputs pulse levels are 0.40 V and 2.4 V and
V
PP
= 12.5 V±0.5 V during programming.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-87661
SHEET
F
5
微控制器 MCU
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