D2
PA
K
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
see
Figure 12;
see
Figure 13
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 13
Dynamic characteristics
Q
GD
Q
G(tot)
E
DS(AL)S
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
V
GS
= 4.5 V; I
D
= 15 A; V
DS
= 15 V;
see
Figure 14;
see
Figure 15
-
-
-
5
19
-
-
-
74
nC
nC
mJ
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
-
-
Typ
-
-
-
-
4.9
3.5
Max
30
100
103
175
5.8
4.1
Unit
V
A
W
°C
mΩ
mΩ
Static characteristics
Avalanche ruggedness
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤
30 V; R
GS
= 50
Ω;
unclamped
[1]
Continuous current is limited by package.
NXP Semiconductors
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
2
1
3
SOT404 (D2PAK)
[1]
It is not possible to make connection to pin 2
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN4R3-30BL
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
4. Marking
Table 4.
Marking codes
Marking code
PSMN4R3-30BL
Type number
PSMN4R3-30BL
PSMN4R3-30BL
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 22 March 2012
2 of 15
NXP Semiconductors
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
5. Limiting values
Table 5.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤
30 V; R
GS
= 50
Ω;
unclamped
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≥
25 °C; T
j
≤
175 °C; R
GS
= 20 kΩ
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
pulsed; t
p
≤
10 µs; T
mb
= 25 °C;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
Max
30
30
20
80
100
465
103
175
175
260
100
465
74
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
[1]
Continuous current is limited by package.
150
I
D
(A)
100
(1)
003aad235
120
P
der
(%)
80
03aa16
50
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN4R3-30BL
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 22 March 2012
3 of 15
NXP Semiconductors
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
10
3
I
D
(A)
10
2
(1)
003aad296
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
μs
100
μs
DC
10
1 ms
10 ms
100 ms
1
10
-1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN4R3-30BL
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 22 March 2012
4 of 15
NXP Semiconductors
PSMN4R3-30BL
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
6. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see
Figure 4
Minimum footprint; mounted on a
printed circuit board
Min
-
-
Typ
1
50
Max
1.5
-
Unit
K/W
K/W
10
Z
th (j-mb)
(K/W)
1
003aad234
δ
= 0.5
0.2
10
-1
0.1
0.05
10
-2
0.02
P
δ
=
t
p
T
10
-3
single shot
t
p
T
t
10
-4
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R3-30BL
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 22 March 2012
5 of 15
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