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CAT24C08C4CTR

产品描述EEPROM 8KB I2C SER EEPROM
产品类别存储    存储   
文件大小183KB,共23页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 选型对比 全文预览

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CAT24C08C4CTR概述

EEPROM 8KB I2C SER EEPROM

CAT24C08C4CTR规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码BGA
包装说明WLCSP-4
针数4
制造商包装代码567DC
Reach Compliance Codecompliant
Factory Lead Time4 weeks
最大时钟频率 (fCLK)0.4 MHz
数据保留时间-最小值100
耐久性1000000 Write/Erase Cycles
I2C控制字节10100MMR
JESD-30 代码R-PBGA-B4
JESD-609代码e1
长度0.86 mm
内存密度8192 bit
内存集成电路类型EEPROM
内存宽度8
湿度敏感等级1
功能数量1
端子数量4
字数1024 words
字数代码1000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织1KX8
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装等效代码BGA4,2X2,16
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
电源1.8/5 V
认证状态Not Qualified
座面最大高度0.38 mm
串行总线类型I2C
最大待机电流0.000001 A
最大压摆率0.002 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.4 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度0.84 mm
最长写入周期时间 (tWC)5 ms

文档预览

下载PDF文档
CAT24C01, CAT24C02,
CAT24C04, CAT24C08,
CAT24C16
1-Kb, 2-Kb, 4-Kb, 8-Kb and
16-Kb I
2
C CMOS Serial
EEPROM
Description
www.onsemi.com
The CAT24C01/02/04/08/16 are 1−Kb, 2−Kb, 4−Kb, 8−Kb and
16−Kb respectively CMOS Serial EEPROM devices organized
internally as 8/16/32/64 and 128 pages respectively of 16 bytes each.
All devices support both the Standard (100 kHz) as well as Fast
(400 kHz) I
2
C protocol.
Data is written by providing a starting address, then loading 1 to 16
contiguous bytes into a Page Write Buffer, and then writing all data to
non−volatile memory in one internal write cycle. Data is read by
providing a starting address and then shifting out data serially while
automatically incrementing the internal address count.
External address pins make it possible to address up to eight
CAT24C01 or CAT24C02, four CAT24C04, two CAT24C08 and one
CAT24C16 device on the same bus.
Features
TDFN−8*
VP2 SUFFIX
CASE 511AK
UDFN8−EP
HU4 SUFFIX
CASE 517AZ
MSOP−8
Z SUFFIX
CASE 846AD
TSOT−23
TD SUFFIX
CASE 419AE
Supports Standard and Fast I
2
C Protocol
1.7 V to 5.5 V Supply Voltage Range
16−Byte Page Write Buffer
Hardware Write Protection for Entire Memory
Schmitt Triggers and Noise Suppression Filters on I
2
C Bus Inputs
(SCL and SDA)
Low power CMOS Technology
More than 1,000,000 Program/Erase Cycles
100 Year Data Retention
Industrial and Extended Temperature Range
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
TSSOP−8
Y SUFFIX
CASE 948AL
WLCSP−4***
C4A SUFFIX
CASE 567DC
WLCSP−4***
C4U SUFFIX
CASE 567NX
SOIC−8
W SUFFIX
CASE 751BD
WLCSP−5***
C5A SUFFIX
CASE 567DD
PDIP−8
L SUFFIX
CASE 646AA
US8**
US SUFFIX
CASE 493
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
* The TDFN (VP2) package is not recommended for
new designs.
** Preliminary, please contact factory for availability.
*** WLCSP are available for the CAT24C04,
CAT24C08 and CAT24C16 only.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 21 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
November, 2016 − Rev. 31
Publication Order Number:
CAT24C01/D

CAT24C08C4CTR相似产品对比

CAT24C08C4CTR CAT24C04C4ATR CAT24C08C5ATR
描述 EEPROM 8KB I2C SER EEPROM EEPROM 4KB I2C SER EEPROM EEPROM 8KB I2C SER EEPROM
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅 不含铅
零件包装代码 BGA BGA BGA
包装说明 WLCSP-4 WLCSP-4 WLCSP-5
针数 4 4 5
制造商包装代码 567DC 567DC 567DD
Reach Compliance Code compliant compliant compliant
Factory Lead Time 4 weeks 9 weeks 10 weeks
最大时钟频率 (fCLK) 0.4 MHz 0.4 MHz 0.4 MHz
数据保留时间-最小值 100 100 100
耐久性 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles
I2C控制字节 10100MMR 1010000R 10100MMR
JESD-30 代码 R-PBGA-B4 R-PBGA-B4 R-PBGA-B5
长度 0.86 mm 0.86 mm 0.86 mm
内存密度 8192 bit 4096 bit 8192 bit
内存集成电路类型 EEPROM EEPROM EEPROM
内存宽度 8 8 8
功能数量 1 1 1
端子数量 4 4 5
字数 1024 words 512 words 1024 words
字数代码 1000 512 1000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C
组织 1KX8 512X8 1KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VFBGA VFBGA VFBGA
封装等效代码 BGA4,2X2,16 BGA4,2X2,16 BGA5,3X3,10/6
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行 SERIAL SERIAL SERIAL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 1.8/5 V 1.8/5 V 1.8/5 V
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 0.38 mm 0.38 mm 0.39 mm
串行总线类型 I2C I2C I2C
最大待机电流 0.000001 A 0.000001 A 0.000001 A
最大压摆率 0.002 mA 0.002 mA 0.002 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 1.7 V 1.7 V 1.7 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 BALL BALL BALL
端子节距 0.4 mm 0.4 mm 0.3 mm
端子位置 BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 0.84 mm 0.84 mm 0.84 mm
最长写入周期时间 (tWC) 5 ms 5 ms 5 ms
厂商名称 ON Semiconductor(安森美) - ON Semiconductor(安森美)
JESD-609代码 e1 e1 -
湿度敏感等级 1 1 -
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) -

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