LNJ03004GND1
Surface Mounting Chip LED
3230 Type
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
Forward current
*1
Pulse forward current
*2
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
P
D
I
F
I
FP
T
j
T
opr
T
stg
Rating
860
120
200
110
–30 to +85
–40 to +100
Unit
mW
mA
mA
°C
°C
°C
Lighting Color
White (5 000 [Kelvin])
Note) *1: I
F
is different by radiated factor of evaluation board.
This value is mounted on evaluation board at Rthj-a = 25.0
°C/W.
*2: The condition of pulse current I
FP
is 55 ms pulse width, 10 % duty.
Electro-Optical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
*1
Luminous flux
*2
Chromaticity coordinates
*3
Color Rendering Index
Symbol
V
F
F
x
y
Ra
I
FP
= 75 mA
I
FP
= 75 mA
I
FP
= 75 mA
I
FP
= 75 mA
I
FP
= 75 mA
Conditions
Min
5.7
37.0
Typ
6.2
54.0
0.345
0.355
82
Max
6.7
80.0
Unit
V
lm
Note) *1: Complete Forward Voltage measurement within 0.1 seconds. Tolerance
±3%
*2: Complete Luminous flux measurement within 0.1 seconds. Tolerance
±10%
*3: Complete Chromaticity coordinates measurement within 0.1 seconds. Tolerance of chromaticity is
±0.01
F
I
FP
160
I
FP
V
F
120
Relative Luminous Flux
T
a
Relative Luminous Flux (%)
Pulse forward current I
FP
(mA)
200
160
120
80
Luminous Flux F (lm)
100
80
60
40
20
0
−40
120
80
40
40
0
4.0
0
0
50
100
150
200
250
6.0
8.0
10.0
−20
0
20
40
60
80
100
Pulse forward current I
FP
(mA)
Forward voltage V
F
(V)
Ambient temperature T
a
(°C)
Relative Spectral Power
Wavelength
1.2
1.0
0.8
X
Y
Y
I
F
T
a
120
Relative Spectral Power (a.u.)
X
Directive characteristics
0°
80
60
40
20
10° 20°
30°
40°
50°
60°
Relative luminous intensity (a.u.)
1.0
0.8
0.6
0.4
0.2
−90
−60
−30
Forward current I
F
(mA)
80
0.6
0.4
0.2
0
350
40
70°
80°
0.2
0.4
0.6
0.8
90°
1.0
0
0
20
40
60
80
100
500
650
800
0
Wavelength (nm)
Radiation Angle (deg)
Relative luminous intensity (a.u.)
Ambient temperature T
a
(°C)
Publication date: June 2014
Ver. DEK
1
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