IDC05S60C
2
nd
generation thinQ!
TM
SiC Schottky Diode
FEATURES:
•
•
•
•
•
•
Revolutionary semiconductor material -
Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on the switching
behavior
No forward recovery
High surge current capability
Applications:
•
SMPS, PFC, snubber
C
A
Chip Type
IDC05S60C
V
BR
600V
I
F
5A
Die Size
1.45 x 1.162 mm
2
Package
sawn on foil
MECHANICAL PARAMETER:
Raster size
Anode pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metalization
Cathode metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1.45x 1.162
mm
1.213 x 0.925
1.68 / 1.22
355
75
0
2182 pcs
Photoimide
3200 nm Al
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al,
≤
350µm
∅ ≥
0.3 mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
mm
µm
mm
deg
2
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006
IDC05S60C
Maximum Ratings
Parameter
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current limited by
T
jmax
Surge non repetitive forward current
sine halfwave
Symbol
V
RRM
V
DC
I
F
I
F,SM
I
F,RM
I
F,max
T
j
,
T
s t g
Condition
Value
600
600
5
Unit
V
T
C
=25° C, t
P
=10 ms
T
C
= 100° C, T
j
= 1 5 0
°
C,
D=0.1
T
C
=25° C, tp=10µs
42
21
180
-55...+175
A
Repetitive peak forward current
limited by T
jmax
Non-repetitive peak forward current
Operating junction and storage
temperature
°C
Static Electrical Characteristics
(tested on chip),
T
j=25
°C,
unless otherwise specified
Value
min.
Typ.
0.6
1.5
max.
70
1.7
Parameter
Reverse current
Diode forward voltage
Symbol
I
R
V
F
V
R
=600V
I
F
= 5A
Conditions
T
j
= 2 5
°
C
T
j
= 2 5
°
C
Unit
µA
V
Dynamic Electrical Characteristics
,
at
T
j
= 25
°C,
unless otherwise specified, tested at component
Parameter
Symbol
Conditions
Value
min.
Typ.
12
max.
Unit
Total capacitive charge
Q
C
I
F
<=I
F , m a x
di/dt=200A/µs
V
R
=400V
T
j
= 150 °C
nC
Switching time
1)
t
c
T
j
= 150 °C
<10
ns
V
R
= 1V
Total capacitance
C
f=1MHz
240
30
30
pF
V
R
= 3 0 0V
V
R
= 600V
1)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
which is dependent on T
j
, I
LOAD
and di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection
.
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006
IDC05S60C
CHIP DRAWING:
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006
IDC05S60C
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES
IDT05S60C
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2000
All Rights Reserved
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006
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