BFS469L6
NPN Silicon RF TWIN Transistor*
•
Low voltage/ low current applications
•
Ideal for VCO modules and low noise amplifiers
•
World's smallest SMD 6-pin leadless package
•
Built in 2 transitors (TR1: die as BFR460L3,
TR2: die as BFR949L3)
•
Low noise figure: TR1: 1.1dB at 1.8 GHz
TR2: 1.5 dB at 1.8 GHz
•
TR1 with excellent ESD performance
typical value > 1500 V (HBM)
* Short term description
$
6 4
#
"
4
5
6
1
2
3
6 4
!
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFS469L6
Marking
Pin Configuration
Package
AD
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
1
2005-10-11
BFS469L6
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
TR1,
T
A
> 0 °C
TR1,
T
A
≤
0 °C
TR2,
T
A
> 0 °C
TR2,
T
A
≤
0 °C
Collector-emitter voltage
TR1
TR2
Collector-base voltage
TR1
TR2
Emitter-base voltage
TR1
TR2
Collector current
TR1
TR2
V
CEO
4.5
4.2
10
10
V
CES
15
20
V
CBO
15
20
V
EBO
1.5
1.5
I
C
50
50
Unit
V
mA
2
2005-10-11
BFS469L6
Maximum Ratings
Parameter
Symbol
I
B
Value
Unit
Base current
TR1
TR2
Total power dissipation
1)
TR1,
T
S
≤
104°C
TR2,
T
S
≤
100°C
Junction temperature
TR1
TR2
Ambient temperature
TR1
TR2
Storage temperature
TR1
TR2
Thermal Resistance
Parameter
mA
5
5
P
tot
mW
200
250
T
j
°C
150
150
T
A
-65 ... 150
-65 ... 150
T
stg
-65 ... 150
-65 ... 150
Symbol
R
thJS
Value
≤
230
≤
200
Unit
Junction - soldering point
2)
TR1
TR2
K/W
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
thJA please refer to Application Note Thermal Resistance
3
2005-10-11
BFS469L6
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
typ.
max.
Unit
Collector-emitter breakdown voltage
TR1,
I
C
= 1 mA,
I
B
= 0
TR2,
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
TR1,
V
CE
= 15 V ,
V
BE
= 0
TR1,
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
TR1,
V
CB
= 5 V,
I
E
= 0
TR2,
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
TR1,
V
EB
= 0,5 V,
I
C
= 0
TR2,
V
EB
= 1 V,
I
C
= 0
DC current gain-
TR1,
I
C
= 20 mA,
V
CE
= 3 V, pulse measured
TR2,
I
C
= 5 mA,
V
CE
= 6 V, pulse measured
V
(BR)CEO
V
4.5
10
5.8
16
-
-
-
-
-
-
120
140
-
-
µA
-
-
10
10
nA
-
-
100
100
µA
-
-
1
0.1
-
90
100
160
180
I
CES
I
CBO
I
EBO
h
FE
4
2005-10-11
BFS469L6
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
(verified by random sampling)
Transition frequency
TR1,
I
C
= 30 mA,
V
CE
= 3 V,
f
= 1 GHz
TR2,
I
C
= 15 mA,
V
CE
= 6 V,
f
= 1 GHz
Collector-base capacitance
TR1,
V
CB
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
TR2,
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
TR1,
V
CE
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
TR2,
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
TR1,
V
EB
= 0,5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
TR2,
V
EB
= 0,5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
0.7
C
eb
-
-
0.55
-
-
0.14
C
ce
-
-
0.14
-
-
0.25
0.45
C
cb
-
-
0.29
0.45
f
T
16
7
22
9
-
-
pF
GHz
typ.
max.
Unit
5
2005-10-11
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
