BFR193L3
NPN Silicon RF Transistor*
•
For low noise, high-gain amplifiers up to 2 GHz
•
For linear broadband amplifiers
•
f
T
= 8 GHz,
F
= 1 dB at 900 MHz
* Short term description
1
2
3
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFR193L3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
95°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
Marking
RC
Pin Configuration
1=B
2=E
3=C
Package
TSLP-3-1
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Value
12
20
20
2
80
10
580
150
-55 ... 150
-55 ... 150
Value
tbd
Unit
V
mA
mW
°C
Unit
K/W
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2005-09-23
BFR193L3
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain-
I
C
= 30 mA,
V
CE
= 8 V, pulse measured
h
FE
70
100
140
I
EBO
-
-
1
I
CBO
-
-
100
I
CES
-
-
100
V
(BR)CEO
12
-
-
typ.
max.
Unit
V
µA
nA
µA
-
2
2005-09-23
BFR193L3
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 50 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Transducer gain
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
1/2)
ma
= |S
21
/
S
12
| (k-(k²-1)
Unit
6
-
8
0.63
-
0.9
GHz
pF
C
cb
C
ce
-
0.22
-
C
eb
-
2.25
-
F
-
-
G
ma
-
-
|S
21e
|
2
-
-
14.5
9
-
-
19
12.5
-
-
1
1.6
-
-
dB
dB
3
2005-09-23
BFR193L3
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
0.2738
24
1.935
3.8742
0.94371
1
1.1824
18.828
0.96893
1.1828
1.0037
0
3
fA
V
-
V
-
Ω
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
NK =
FC =
125
0.26949
14.267
0.037925
1.8368
0.76534
0.70276
0.69477
0
0.30002
0
0
0.72063
-
A
-
A
Ω
-
V
-
deg
-
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.95341
10.627
1.4289
0.037409
0.91763
0.11938
0.48654
0.8
935.03
0.053563
0.75
1.11
300
-
fA
-
fA
mA
Ω
-
V
fF
-
V
eV
K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
C
4
C
1
L
2
B
C
7
R
1
L
3
C
B'
Transistor
Chip
E'
C'
C
6
C
2
L
1
C
3
C
5
L
1
=
L
2
=
L
3
=
C
1
=
C
2
=
C
3
=
C
4
=
C
5
=
C
6
=
C
7
=
R
1
=
0.575
0.575
0.275
33
28
131
8
8
24
300
204
nH
nH
nH
fF
fF
fF
fF
fF
fF
fF
Ω
Valid up to 6GHz
E
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
EHA07536
4
2005-09-23
Package TSLP-3-1
BFR193L3
Package Outline
Top view
Bottom view
0.6
±0.05
0.5
±0.035
0.65
±0.05
1)
0.05 MAX.
3
2
1
±0.05
3
1
2
1
2 x 0.25
±0.035
0.45
1)
Pin 1
marking
0.35
±0.05
2 x 0.15
±0.035
1)
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.275
0.6
0.35
0.35
0.945
0.3
1
0.355
0.2
0.225
0.225
0.15
Copper
Solder mask
R0.1
0.2
0.17
Stencil apertures
Marking Layout
Type code
0.315
0.25
±0.035
0.4
+0.1
1)
BFR193L3
Laser marking
Pin 1
marking
Example
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
4
0.5
1.16
Pin 1
marking
0.76
8
5
2005-09-23
嵌入式系统
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