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RPI-0129

产品描述Optical Switches, Transmissive, Phototransistor Output Ultramin, SMD Type Photointerrupter
产品类别光电子/LED    光电   
文件大小57KB,共4页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准
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RPI-0129概述

Optical Switches, Transmissive, Phototransistor Output Ultramin, SMD Type Photointerrupter

RPI-0129规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称ROHM(罗姆半导体)
包装说明ULTRA MINIATURE, SMD, 4 PIN
Reach Compliance Codecompliant
Coll-Emtr Bkdn Voltage-Min30 V
配置SINGLE
最大暗电源500 nA
最大正向电流0.05 A
间隙大小1.2 mm
JESD-609代码e1
安装特点SURFACE MOUNT
功能数量1
最大通态电流0.00495 A
最大通态电压30 V
最高工作温度85 °C
最低工作温度-25 °C
光电设备类型TRANSISTOR OUTPUT SLOTTED SWITCH
输出电路类型Transistor
标称槽宽1.2 mm
表面贴装YES
端子面层Tin/Silver/Copper (Sn/Ag/Cu)

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RPI-0129
Photointerrupter, Ultraminiature SMD type
Absolute maximum ratings (Ta=25°C)
Parameter
Input (LED)
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Symbol
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Limits
50
5
80
30
4.5
30
80
−25
to
+85
−30
to
+85
Unit
mA
V
mW
V
V
mA
mW
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone
Output
photo-
transistor
)
Features
1) Ultraminiature SMD type.
2) Gap 1.2mm.
(
°C
°C
Electrical and optical characteristics (Ta=25°C)
Parameter
Infrared Transfer
Output Input
light
characteristics charac- charac-
emitter
teristics teristics
diode
Symbol
V
F
I
R
I
CEO
Min.
Typ.
Max.
Unit
V
μA
μA
nm
mA
V
μs
μs
MHz
nm
μs
nm
V
CE
=
5V, I
F
=
20mA
I
F
=
20mA, I
C
=
0.1mA
V
CC
=
5V, I
F
=
20mA, R
L
=
100Ω
I
F
=
50mA
I
F
=
50mA
V
R
=
5V
V
CE
=
10V
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Rise time
Fall time
0.95
1.3
800
10
10
1
950
10
800
1.6
10
0.5
4.95
0.4
λ
P
I
C
Collector-emitter saturation voltage
V
CE(sat)
Response time
tr
tf
f
C
Cut-off frequency
Peak light emitting wavelength
Response time
Maximum sensitivity wavelength
λ
P
tr tf
Non-coherent Infrared light emitting diode used.
Photo
transistor
V
CC
=
5V, I
C
=
1mA, R
L
=
100Ω
This product is not designed to be protected against electromagnetic wave.
λ
P
Electrical and optical characteristics curves
RELATIVE COLLECTOR CURRENT : Ic
(%)
1.2
50
1.0
d
FORWARD CURRENT : I
F
(
mA
)
50
40
30
20
10
0
FORWARD CURRENT : I
F
(
mA)
40
0.8
0.6
0.4
0.2
0
0
−25°C
0°C
25°C
50°C
75°C
30
20
10
0
0.2
0.5
1.0
1.5
2.0
2.5
−20
0
20
40
60
80
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
DISTANCE : d
(mm)
AMBIENT TEMPERATURE : Ta (°C)
FORWARD VOLTAGE : V
F
(
V)
Fig.1 Relative output current vs.
distance ( )
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION : P
D
/P
C
(mW)
Fig.2 Forward current falloff
RELATIVE COLLECTOR CURRENT : Ic (%)
Fig.3 Forward current vs. forward
voltage
RELATIVE COLLECTOR CURRENT : Ic
(%)
1.2
d
120
100
P
D
P
C
80
60
40
20
0
100
80
1.0
0.8
0.6
0.4
0.2
0
0
60
40
20
V
CE
=5V
I
F
=20mA
75
100
0.5
1.0
1.5
2.0
−20
0
20
40
60
80
100
0
−25
0
25
50
DISTANCE : d (mm)
AMBIENT TEMPERATURE : Ta (°C)
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Relative output current vs.
distance ( )
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
Fig.6 Relative output vs. ambient
temperature

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