RF Power Field Effect Transistor
LDMOS, 800—1700 MHz, 15W, 26V
1/11/06
Preliminary
MAPL-000817-015C00
Features
Designed for broadband commercial
applications up to 1.7GHz
•
High Gain, High Efficiency and High
Linearity
•
Typical P1dB performance at 960MHz,
26Vdc, CW
•
Typical Power Output: 16.5W
•
Gain: 16.5dB
•
Efficiency: 50%
•
10:1 VSWR Ruggedness at 15W,
26Vdc, 960MHz
•
Package Style
MAPL-000817-015C00
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ T
C
= 25 °C
Storage Temperature
Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
STG
T
J
Rating
65
+20, -20
31.25
-65 to +150
150
Units
V
dc
V
dc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
ΘJC
Max
4
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
Characteristic
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 30 µAdc)
Gate Threshold Voltage
(V
ds
= 26 Vdc, I
d
= 100 mA)
Gate Quiescent Voltage
(V
ds
= 26 Vdc, I
d
= 100 mA)
Drain-Source On-Voltage
(V
gs
= 10 Vdc, I
d
= 1 A)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (1)
Common Source Amplifier Gain
(V
DD
= 26 Vdc, I
DQ
= 100 mA, f = 960 MHz, P
OUT
= 15 W)
Drain Efficiency
(V
DD
= 26 Vdc, I
DQ
= 100 mA, f = 960 MHz, P
OUT
= 15 W)
Input Return Loss
(V
DD
= 26 Vdc, I
DQ
= 100 mA, f = 960 MHz, P
OUT
= 15 W)
Output VSWR Tolerance
(V
DD
= 26 Vdc, I
DQ
= 100 mA, f = 960 MHz, P
OUT
= 15 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Common Source Amplifier Gain
(V
DD
= 26 Vdc, I
DQ
= 100 mA, f = 1670 MHz, P
OUT
= 15 W)
Drain Efficiency
(V
DD
= 26 Vdc, I
DQ
= 100 mA, f = 1670 MHz, P
OUT
= 15 W)
Input Return Loss
(V
DD
= 26 Vdc, I
DQ
= 100 mA, f = 1670 MHz, P
OUT
= 15 W)
Symbol
Min
Typ
Max
Unit
V
(BR)DSS
V
GS(th)
65
2
—
—
—
5
Vdc
Vdc
V
DS(Q)
3
—
5
Vdc
V
DS(on)
—
0.25
—
Vdc
G
P
EFF (ŋ)
IRL
Ψ
—
—
—
17
50
-10
—
—
—
dB
%
dB
No Degradation In Output Power
Before and After Test
—
—
—
12.5
50
-10
—
—
—
dB
%
dB
G
P
EFF (ŋ)
IRL
(1)
Device specifications obtained on a Production Test Fixture.
2
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
C1,C7
Tantalum Surface Mt. Cap., 100 µF, 35 V
C2,C8
Ceramic Chip Capacitor, 0.1 µF
C3,C9
Ceramic Chip Capacitor, 1000 pF
C4,C10,C12
Chip Capacitor, 33 pF ATC100A
C5
Chip Capacitor, 10.0 pF ATC100A
C6
Chip Capacitor, 11.0 pF ATC100A
C11
Chip Capacitor, 8.2 pF ATC100A
J1,J2
SMA Connector, Omni Spectra 2052-5636-02
L1
Inductor, 18 nH, CoilCraft 1206CS
L2
Inductor, 27 nH, CoilCraft 1206CS
P1,P2
Connector, AMP 640457-4
Q1
Transistor, MAPL-000817-015C00
R1
Chip Resistor (0805), 10k Ohm
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Distributed Microstrip Element, 0.125” x 0.046”
Distributed Microstrip Element, 0.506” x 0.046”
Distributed Microstrip Element, 0.080” x 0.046”
Distributed Microstrip Element, 0.020” x 0.178”
Distributed Microstrip Element, 0.253” x 0.178”
Distributed Microstrip Element, 0.315” x 0.178”
Distributed Microstrip Element, 0.312” x 0.046”
Distributed Microstrip Element, 0.613” x 0.046”
Distributed Microstrip Element, 0.125” x 0.046”
PC Board Rogers (RO4350) Duroid, 0.020:” thick,
Er=3.5, 1 Oz Copper Both Sides
Figure 1. 920—960 MHz Test Fixture Schematic
Figure 2. 920—960 MHz Test Fixture Component Layout
3
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
C1,C6
Tantalum Surface Mt. Cap., 100 µF, 35 V
C2,C7
Ceramic Chip Capacitor, 0.1 µF
C3,C8
Ceramic Chip Capacitor, 1000 pF
C4,C9,C12
Chip Capacitor, 33 pF ATC100A
C5
Chip Capacitor, 4.7 pF ATC100A
C10
Chip Capacitor, 3.0 pF ATC100A
C11
Chip Capacitor, 3.3 pF ATC100A
J1,J2
SMA Connector, Omni Spectra 2052-5636-02
L1
Inductor, 18 nH, CoilCraft 1206CS
L2
Inductor, 27 nH, CoilCraft 1206CS
P1,P2
Connector, AMP 640457-4
Q1
Transistor, MAPL-000817-015C00
R1
Chip Resistor (0805), 10k Ohm
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Distributed Microstrip Element, 0.125” x 0.046”
Distributed Microstrip Element, 0.533” x 0.046”
Distributed Microstrip Element, 0.080” x 0.026”
Distributed Microstrip Element, 0.127” x 0.046”
Distributed Microstrip Element, 0.146” x 0.046”
Distributed Microstrip Element, 0.077” x 0.178”
Distributed Microstrip Element, 0.211” x 0.178”
Distributed Microstrip Element, 0.029” x 0.178”
Distributed Microstrip Element, 0.920” x 0.046”
Distributed Microstrip Element, 0.125” x 0.046”
PC Board Rogers (RO4350) Duroid, 0.020:” thick,
Er=3.5, 1 Oz Copper Both Sides
Figure 3. 1620-1670 MHz Test Fixture Schematic
Figure 4. 1620—1670 MHz Test Fixture Component Layout
4
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
Figure 5. MAPL-000817-015C00 Pin Connections
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
