2.0-6.5 GHz 0.5W Power Amplifier
Features
♦
0.5 Watt Saturated Output Power Level
♦
Variable Drain Voltage (4-10V) Operation
♦
MSAG™ Process
RO-P-DS-3096
Preliminary Information
MAAPGM0028
Primary Applications
♦
MMDS, WLL
♦
5.1- 5.9 GHz HyperLAN
♦
UNII
APGM0028
YWWLLLL
Description
The MAAPGM0028 is a packaged, 2-stage, 0.5W power
amplifier with on-chip bias networks in a bolt down ceramic
package, allowing easy assembly. This product is fully
matched to 50 ohms on both the input and output. It can be
used as a power amplifier stage or as a driver stage in high
power applications.
Fabricated using M/A-COM’s repeatable, high performance
and highly reliable GaAs Multifunction Self-Aligned Gate
MESFET Process, each device is 100% RF tested on wafer
to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like
manufacturing processes, planar processing of ion
implanted transistors, multiple implant capability enabling
power, low-noise, switch and digital FETs on a single chip,
and polyimide scratch protection for ease of use with
automated manufacturing processes.
Pin Number
1
2
3
4
5
6
7
8
9
10
RF Designator
No Connection
No Connection
RF IN
No Connection
V
GG
No Connection
No Connection
RF OUT
No Connection
V
DD
Maximum Operating Conditions
1
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF, 40% IDSS)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Processing Temperature
1
1. Operation outside of these ranges may reduce product reliability.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
23.0
+12.0
-3.0
470
3.2
180
-55 to +150
230
Units
dBm
V
V
mA
W
°C
°C
°C
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-6.5 GHz 0.5W Power Amplifier
Recommended Operating Conditions
Characteristic
Drain Supply Voltage
Gate Supply Voltage
Input Power
Junction Temperature
Thermal Resistance
Package Base Temperature
Symbol
V
DD
V
GG
P
IN
T
J
Θ
JC
T
B
28.4
Note 2
Min
4.0
-2.4
Typ
8.0
-2.0
18.0
Max
10.0
-1.5
21
150
RO-P-DS-3096
Preliminary Information
MAAPGM0028
Unit
V
V
dBm
°C
°C/W
°C
2. Maximum Package Base Temperature = 150°C —
Θ
JC
* V
DD
* I
DQ
Electrical Characteristics: T
B
= 40°C, Z
0
= 50
Ω,
V
DD
= 8V, I
DQ
≈
300 mA
3
, P
in
= 18 dBm, R
G
≈
250
Ω
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Gate Supply Current
Drain Supply Current
Noise Figure
2
nd
Harmonic
3
rd
Harmonic
3
rd
Order Intermodulation Distortion,
Single Carrier Level = 17 dBm
5
th
Order Intermodulation Distortion,
Single Carrier Level = 17 dBm
Symbol
f
POUT
PAE
P1dB
G
VSWR
VSWR
I
GG
I
DD
NF
2f
3f
IM3
IM5
Typical
2.0-6.5
29
25
26
14
2:1
2.2:1
<2
< 450
8
-10
-20
-20
-46
mA
mA
dB
dBc
dBc
dBm
dBm
Units
GHz
dBm
%
dBm
dB
3. Adjust V
GG
between –2.4 to –1.5V to achieve indicated I
DQ
.
Operating Instructions
This device is static sensitive. Please handle with care. To operate the device,
follow these steps.
1. Apply V
GG
≈
-1.8V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8 V.
3. Adjust V
GG
to set I
DQ
, (See Note 3 above).
4. Set RF input.
5.
Power down sequence in reverse. Turn V
GG
off last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-6.5 GHz 0.5W Power Amplifier
RO-P-DS-3096
Preliminary Information
MAAPGM0028
50
POUT
PAE
40
50
50
50
POUT
PAE
40
40
40
POUT (dBm)
POUT (dBm)
PAE(%)
20
20
20
20
10
10
10
10
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
0
4.0
5.0
6.0
7.0
8.0
9.0
0
10.0
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency
at V
DD
= 8V and P
in
= 18 dBm
Drain Voltage (volts)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage
at f
o
= 4 GHz
50
VDD = 4
VDD = 8
VDD = 6
VDD = 10
24
20
G ain
Input VSW R
O utput VSW R
7
6
40
16
5
P1dB (dBm)
Gain (dB)
30
12
4
20
8
3
10
4
2
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
1
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
Frequency (G H z)
Figure 4. Sm all Signal G ain and VSW R vs. Frequency at V
D D
= 8V.
50
2.0 GHz
4.0 GHz
40
6.5 GHz
0.5
0.4
POUT (dBm)
Drain Current (A)
30
0.3
20
0.2
10
0.1
2.0 GHz
4.0 GHz
6.5 GHz
0
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
0.0
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
PIN (dBm)
Figure 5. Output Power vs. Input Power
at V
DD
= 8V
Input Power (dBm)
Figure 6. Drain Current vs. Input Power at V
DD
= 8V
.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
VSWR
PAE(%)
30
30
30
30
2.0-6.5 GHz 0.5W Power Amplifier
RO-P-DS-3096
Preliminary Information
MAAPGM0028
APGM0028
Figure 7. CR-15 Package Dimensions
The CR-15 is a high frequency, low thermal resistance package. The package consists of a
cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish
consists of electrolytic gold over nickel plate.
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-6.5 GHz 0.5W Power Amplifier
Figure 8. Recommended Bias Configuration
RO-P-DS-3096
Preliminary Information
MAAPGM0028
100 pF
V
DD
0.1
µF
APGM0028
YWWLLLL
RF
IN
RF
OUT
R
G
(See Electrical Characteristics - Page 2)
V
GG
100 pF
0.1
µF
Pin Number
1
2
3
4
5
6
7
8
9
10
RF Designator
No Connection
No Connection
RF IN
No Connection
V
GG
No Connection
No Connection
RF OUT
No Connection
V
DD
This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board
which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically
conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of
the package to housing interface. Refer to
M/A-COM Application Note #M567*
for more information .
For applications where surface mount components are to be installed after the CR-15 installation, this package will not be
damaged when subjected to typical convection or IR oven reflow profiles. Refer to
M/A-COM Application Note #M538*
for
maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron
or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static
discharge (ESD) safe.
* Application Notes can be found by going to the Site Search Page on M/A-COM’s web page
(http://www.macom.com/search/search.jsp) and searching for the required Application Note.
Assembly Instructions:
Biasing Notes:
♦
♦
5
The 100pF bypass capacitors must be placed as close to the V
GG
and V
DD
pins as possible
(recommended < 100 mils).
A negative bias must be applied to V
GG
before applying a positive bias to V
DD
to prevent damage to the amplifier.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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