HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2006.07.04
Page No. : 1/6
HMJE13009A
12 AMPERE NPN SILICON POWER TRANSISTOR
Description
The HMJE13009A is designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits.
TO-220AB
Specification Features
•
V
CEO(sus)
=400V
•
Reverse Bias SOA with Inductive Loads @T
C
=100°C
•
Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C…tc@8A, 100°C is 120ns(Typ.)
•
700V Blocking Capability
•
SOA and Switching Applications Information
Absolute Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak*
Base Current-Continuous
Base Current-Peak*
Emitter Current-Continuous
Emitter Current-Peak
Total Power Dissipation@T
A
=25°C
Derate above 25°C
Total Power Dissipation@T
C
=25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
V
CEO(sus)
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
TJ, Tstg
Max.
400
700
9
12
24
6
12
18
36
2
16
100
800
-65 to +150
Unit
Vdc
Vdc
Vd
Adc
Adc
Adc
Adc
Adc
Adc
Watts
mW/°C
Watts
mW/°C
°C
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
Symbol
R
θJC
R
θJA
T
L
Max.
1.25
62.5
275
Unit
°C/W
°C/W
°C
HMJE13009A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
A
=25°C unless otherwise noted)
Characteristic
•
Off Characteristics
Collector-Emitter Sustaining Voltage
(I
C
=10mA, I
B
=0)
Collector Cutoff Current
(V
CEV
=Rated Value, V
BE(off)
=1.5Vdc
(V
CEV
=Rated Value, V
BE(off)
=1.5Vdc, T
C
=100°C)
Emitter Cutoff Current (V
EB
=9Vdc, I
C
=0)
•
Second Breakdown
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased
•
On Characteristics
DC Current Gain (I
C
=0.5Adc, V
CE
=5Vdc)
DC Current Gain (I
C
=5Adc, V
CE
=5Vdc)
DC Current Gain (I
C
=8Adc, V
CE
=5Vdc)
DC Current Gain (I
C
=12Adc, V
CE
=5Vdc)
Collector-Emitter Saturation Voltage
(I
C
=5Adc, I
B
=1Adc)
(I
C
=8Adc, I
B
=1.6Adc)
(I
C
=12Adc, I
B
=3Adc)
(I
C
=8Adc, I
B
=1.6Adc, T
C
=100°C)
Base-Emitter Saturation Voltage
(I
C
=5Adc, I
B
=1Adc)
(I
C
=8Adc, I
B
=1.6Adc)
(I
C
=8Adc, I
B
=1.6Adc, T
C
=100°C)
•
Dynamic Characteristics
Current Gain Bandwidth Product
(I
C
=500mAdc, V
CE
=10Vdc, f=1MHz)
Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=0.1MHz)
•
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
•
Inductive Load, Clamped
Voltage Storage Time
Crossover Time
(I
C
=8Adc, V
clamp
=300Vdc)
(I
B1
=1.6Adc,V
BE(off)
=5Vdc, T
C
=100°C)
tsv
tc
-
-
(V
CC
=125Vdc, I
C
=8A)
I
B1
=I
B2
=1.6A, tp=25uS
Duty Cycle≤1%
td
tr
ts
tf
-
-
-
-
f
T
Cob
4
-
*h
FE1
*h
FE2
*h
FE3
*h
FE4
*V
CE(sat)1
*V
CE(sat)2
*V
CE(sat)3
*V
CE(sat)4
*V
BE(sat)1
*V
BE(sat)2
*V
BE(sat)3
15
13
8
5
-
-
-
-
-
-
-
Is/b
V
CEO(sus)
400
Symbol
Min.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2006.07.04
Page No. : 2/6
Typ.
Max.
Unit
-
-
Vdc
I
CEV
I
EBO
-
-
-
-
-
-
1
5
1
mAdc
mAdc
See Figure 1
See Figure 2
-
-
-
-
-
-
-
-
-
-
-
-
22
-
-
1
1.5
3
2
1.3
1.6
1.5
Vdc
Vdc
-
180
-
-
MHz
pF
0.06
0.45
1.3
0.2
0.1
1
3
0.7
uS
uS
uS
uS
0.92
0.12
2.3
0.7
uS
uS
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HMJE13009A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
V
CE
=5V
125 C
o
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2006.07.04
Page No. : 3/6
Saturation Voltage & Collector Current
10
V
BE(sat)
@ I
C
=5I
B
75 C
o
25 C
o
Saturation Voltage (V)
hFE
10
1
25 C
o
75 C
o
125 C
o
1
0.001
0.01
0.1
1
10
100
0.1
0.001
0.01
0.1
1
10
100
Collector Current (A)
Collector Current (A)
Saturation Voltage & Collector Current
10
V
CE(sat)
@ I
C
=4I
B
10
Saturation Voltage & Collector Current
V
CE(sat)
@ I
C
=5I
B
Saturation Voltage (V)...
1
125 C
o
Saturation Voltage (V)
1
75 C
125 C
o
o
75 C
0.1
25 C
o
o
0.1
25 C
o
0.01
0.001
0.01
0.1
1
10
100
0.01
0.001
0.01
0.1
1
10
100
Collector Current (A)
Collector Current (A)
Capacitance & Reverse-Biased Voltage
1000
Switching Time & Collector Current
10
V
C
=125V, I
C
=5I
B1
, I
B1
=-I
B2
100
Switching Time (us)...
Capacitance (pF)
Tstg
1
Ton
10
Tf
1
0.1
1
10
100
0.1
0.1
1
10
100
Reverse-Biased Voltage (V)
Collector Current (A)
HMJE13009A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2006.07.04
Page No. : 4/6
Safe Ooperating Area
100
Collector Current-Ic (A)
..
.
10
100ms
1s
1
1ms
0.1
1
10
100
1000
Forward Voltage-V
CB
(V)
HMJE13009A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
F
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2006.07.04
Page No. : 5/6
MJ E
13009A
Control Code
H
I
G
Tab
P
L
J
M
3
2
1
O
N
K
Date Code
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
-
-
3.00
0.75
2.54
1.14
-
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056
Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMJE13009A
HSMC Product Specification
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