HMC527
v00.1204
GaAs MMIC I/Q MIXER
8.5 - 13.5 GHz
Typical Applications
The HMC527 is ideal for:
• Point-to-Point and Point-to-Multi-Point Radio
Features
Wide IF Bandwidth: DC - 2 GHz
Image Rejection: 35 dB
LO to RF Isolation: 50 dB
High Input IP3: +28 dBm
3
MIXERS - CHIP
• VSAT
Functional Diagram
General Description
The HMC527 is a compact I /Q MMIC mixer which can
be used as either an Image Reject Mixer or a Single
Sideband Upconverter. The chip utilizes two standard
Hittite double balanced mixer cells and a 90 degree
hybrid fabricated in a GaAs MESFET process. All
data shown below is taken with the chip mounted in
a 50 Ohm test fixture and includes the effects of 1 mil
diameter x 20 mil length bond wires on each port. A
low frequency quadrature hybrid was used to produce
a 100 MHz USB IF output. This product is a much
smaller alternative to hybrid style Image Reject Mixers
and Single Sideband Upconverter assemblies.
Electrical Specifications,
T
A
= +25° C, IF= 100 MHz, LO = +19 dBm*
Parameter
Frequency Range, RF/LO
Frequency Range, IF
Conversion Loss (As IRM)
Image Rejection
1 dB Compression (Input)
LO to RF Isolation
LO to IF Isolation
IP3 (Input)
Amplitude Balance
Phase Balance
35
17
17
Min.
Typ.
8.5 - 13.5
DC - 2
8
25
+21
45
22
+25
0.7
6
45
19
10
27
Max.
Min.
Typ.
10.5 - 12
DC - 2
7.5
35
+21
50
24
+28
0.5
6
9.5
Max.
Units
GHz
GHz
dB
dB
dBm
dB
dB
dBm
dB
Deg
* Unless otherwise noted, all measurements performed as downconverter.
3 - 162
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC527
v00.1204
GaAs MMIC I/Q MIXER
8.5 - 13.5 GHz
Data taken as IRM with External IF Hybrid
Conversion Gain vs. Temperature
0
Image Rejection vs. Temperature
50
CONVERSION GAIN (dB)
-5
IMAGE REJECTION (dB)
40
30
3
+25C
+85C
-55C
-10
20
+25C
-15
+85C
-55C
10
-20
8
9
10
11
12
13
14
RF FREQUENCY (GHz)
0
8
9
10
11
12
13
14
RF FREQUENCY (GHz)
Conversion Gain vs. LO Drive
0
Return Loss
0
CONVERSION GAIN (dB)
-5
RETURN LOSS (dB)
-5
-10
-10
-15
-15
+17 dBm
+19 dBm
+21 dBm
-20
RF
LO
-20
8
9
10
11
12
13
14
RF FREQUENCY (GHz)
-25
8
9
10
11
12
13
14
FREQUENCY (GHz)
Input P1dB vs. Temperature
24
22
20
P1dB (dBm)
Input IP3 vs. LO Drive
35
30
25
18
16
14
12
10
8
9
10
11
12
13
14
RF FREQUENCY (GHz)
+25C
+85C
-55C
IP3 (dBm)
20
15
10
5
8
9
10
11
12
13
14
RF FREQUENCY (GHz)
LO = +17 dBm
LO = +19 dBm
LO = +21 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 16
MIXERS - CHIP
HMC527
v00.1204
GaAs MMIC I/Q MIXER
8.5 - 13.5 GHz
Quadrature Channel Data Taken Without IF Hybrid
Isolations
-10
IF Bandwidth*
0
RETURN LOSS
CONVERSION GAIN
-20
ISOLATION (dB)
LO/IF2
RESPONSE (dB)
3
MIXERS - CHIP
-5
-30
LO/IF1
RF/IF1
-10
-40
-50
RF/IF2
LO/RF
-15
-60
8
9
10
11
12
13
14
RF FREQUENCY (GHz)
-20
0.5
1
1.5
2
2.5
3
3.5
IF FREQUENCY (GHz)
Amplitude Balance vs. LO Drive
4
Phase Balance vs. LO Drive
15
10
5
0
-5
-10
-15
PHASE BALANCE (degrees)
AMPLITUDE BALANCE (dB)
2
LO = +17dBm
LO = +19dBm
LO = +21dBm
LO = +17 dBm
LO = +19 dBm
LO = +21 dBm
0
-2
-4
8
9
10
11
12
13
14
RF FREQUENCY (GHz)
8
9
10
11
12
13
14
RF FREQUENCY (GHz)
Upconverter Performance Conversion
Gain vs. LO Drive
0
Upconverter Performance Sideband
Rejection vs. LO Drive
0
SIDEBAND REJECTION (dBc)
-10
-20
-30
-40
-50
-60
CONVERSION GAIN (dB)
-5
LO = +17 dBm
LO = +19 dBm
LO = +21 dBm
-10
+17 dBm
-15
+19 dBm
+21 dBm
-20
8
9
10
11
12
13
14
RF FREQUENCY (GHz)
8
9
10
11
12
13
14
RF FREQUENCY (GHz)
* Conversion gain data taken with external IF hybrid
3 - 164
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC527
v00.1204
GaAs MMIC I/Q MIXER
8.5 - 13.5 GHz
Harmonics of LO
nLO Spur at RF Port
LO Freq. (GHz)
1
8.5
9.5
10.5
11.5
12.5
13.5
43
48
53
50
48
44
2
48
47
51
57
52
51
3
50
57
62
67
67
64
4
77
64
53
45
47
xx
MxN Spurious Outputs
nLO
mRF
0
1
2
3
4
0
xx
33
86
96
89
1
-11
0
77
95
94
2
16
53
76
101
96
3
22
62
78
91
101
4
38
95
94
102
107
3
MIXERS - CHIP
LO = +19 dBm
Values in dBc below input LO level measured at RF Port.
RF = 10.6 GHz @ -10 dBm
LO = 10.5 GHz @ +19 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF / IF Input
LO Drive
Channel Temperature
Continuous Pdiss (T=85°C)
(derate 7.1 mW/°C above 85°C)
Thermal Resistance (R
TH
)
(junction to die bottom)
Storage Temperature
Operating Temperature
+20 dBm
+27 dBm
150°C
460 mW
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information
[1]
Standard
Alternate
[2]
GP-2
140 °C/W
-65 to +150 °C
-55 to +85 deg °C
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004”
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
8. OVERALL DIE SIZE ±.002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 16
HMC527
v00.1204
GaAs MMIC I/Q MIXER
8.5 - 13.5 GHz
Pad Descriptions
Pad Number
Function
Description
This pad is AC coupled and matched to
50 Ohms from 8.5 to 13.5 GHz.
Interface Schematic
1
RF
3
4
LO
This pad is AC coupled and matched to
50 Ohms from 8.5 to 13.5 GHz.
This pad is DC coupled. For applications not
requiring operation to DC, this port should be DC
blocked externally using a series capacitor whose
value has been chosen to pass the necessary IF
frequency range. For operation to DC, this pad
must not source/sink more than 3mA of current or
die non-function and possible die failure will result.
Pads 5 and 6 are alternate IF ports.
The backside of the die must be connected
to RF/DC ground.
MIXERS - CHIP
2 (5)
IF2
3 (6)
IF1
GND
Assembly Diagrams
3 - 166
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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