HMC523
v00.1104
GaAs MMIC I/Q MIXER
15 - 23.6 GHz
Typical Applications
The HMC523 is ideal for:
• Point-to-Point and Point-to-Multi-Point Radio
Features
Wide IF Bandwidth: DC - 3.5 GHz
Image Rejection: 27 dB
LO to RF Isolation: 50 dB
High Input IP3: +25 dBm
3
MIXERS - CHIP
• Digital Radio
• Military
• VSAT
Functional Diagram
General Description
The HMC523 is a compact I /Q MMIC mixer which can
be used as either an Image Reject Mixer or a Single
Sideband Upconverter. The chip utilizes two standard
Hittite double balanced mixer cells and a 90 degree
hybrid fabricated in a GaAs MESFET process. All
data shown below is taken with the chip mounted in
a 50 Ohm test fixture and includes the effects of 1 mil
diameter x 20 mil length bond wires on each port. A
low frequency quadrature hybrid was used to produce
a 100 MHz USB IF output. This product is a much
smaller alternative to hybrid style Image Reject Mixers
and Single Sideband Upconverter assemblies.
Electrical Specifications,
T
A
= +25° C, IF= 100 MHz, LO = +17 dBm*
Parameter
Frequency Range, RF/LO
Frequency Range, IF
Conversion Loss (As IRM)
Image Rejection
1 dB Compression (Input)
LO to RF Isolation
LO to IF Isolation
IP3 (Input)
Amplitude Balance
Phase Balance
40
20
20
Min.
Typ.
15 - 21
DC - 3.5
8
27
+15
50
25
+25
0.3
2
40
17
10
20
Max.
Min.
Typ.
21 - 23.6
DC - 3.5
9.5
25
+18
50
22
+20
0.3
3
11.5
Max.
Units
GHz
GHz
dB
dB
dBm
dB
dB
dBm
dB
Deg
* Unless otherwise noted, all measurements performed as downconverter.
3 - 138
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC523
v00.1104
GaAs MMIC I/Q MIXER
15 - 23.6 GHz
Image Rejection vs. Temperature
40
Data Taken As IRM With External IF Hybrid
Conversion Gain vs. Temperature
0
CONVERSION GAIN (dB)
-5
IMAGE REJECTION (dB)
30
3
+25C
+85C
-55C
-10
20
+25C
-15
+85C
-55C
10
-20
13
14
15
16
17
18
19
20
21
22
23
24
RF FREQUENCY (GHz)
0
13
14
15
16
17
18
19
20
21
22
23
24
RF FREQUENCY (GHz)
Conversion Gain vs. LO Drive
0
Return Loss
0
CONVERSION GAIN (dB)
RETURN LOSS (dB)
-5
-5
-10
-15
+11 dBm
+13 dBm
+15 dBm
+17 dBm
+19 dBm
-10
RF
LO
-20
13
14
15
16
17
18
19
20
21
22
23
24
RF FREQUENCY (GHz)
-15
13
14
15
16
17
18
19
20
21
22
23
24
FREQUENCY (GHz)
Input P1dB vs. Temperature
22
20
18
16
P1dB (dBm)
Input IP3 vs. LO Drive
30
25
20
IP3 (dBm)
15
10
5
0
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
14
12
10
8
6
4
2
0
13
14
15
16
17
18
19
20
21
22
23
24
RF FREQUENCY (GHz)
+25C
+85C
-55C
13
14
15
16
17
18
19
20
21
22
23
24
RF FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 13
MIXERS - CHIP
HMC523
v00.1104
GaAs MMIC I/Q MIXER
15 - 23.6 GHz
Quadrature Channel Data Taken Without IF Hybrid
Isolations
-10
IF Bandwidth*
0
-20
ISOLATION (dB)
LO/IF2
-5
RESPONSE (dB)
3
MIXERS - CHIP
-30
LO/IF1
-10
-40
LO/RF
RF/IF2
RF/IF1
-15
-50
RETURN LOSS
CONVERSION GAIN
-60
13
14
15
16
17
18
19
20
21
22
23
24
RF FREQUENCY (GHz)
-20
0.5
1
1.5
2
2.5
3
3.5
IF FREQUENCY (GHz)
Amplitude Balance vs. LO Drive
4
3
2
1
0
-1
-2
-3
-4
13
14
15
16
17
18
19
20
21
22
23
24
RF FREQUENCY (GHz)
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
Phase Balance vs. LO Drive
15
10
5
0
-5
-10
-15
13
14
15
16
17
18
19
20
21
22
23
24
RF FREQUENCY (GHz)
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
Upconverter Performance Conversion
Gain vs. LO Drive
0
Upconverter Performance Sideband
Rejection vs. LO Drive
0
SIDEBAND REJECTION (dBc)
-10
-20
-30
-40
-50
-60
PHASE BALANCE (degrees)
AMPLITUDE BALANCE (dB)
CONVERSION GAIN (dB)
-5
LO = +11 dBm
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
-10
LO = +11 dBm
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
-15
-20
13
14
15
16
17
18
19
20
21
22
23
24
RF FREQUENCY (GHz)
13
14
15
16
17
18
19
20
21
22
23
24
RF FREQUENCY (GHz)
* Conversion gain data taken with external IF hybrid
3 - 140
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC523
v00.1104
GaAs MMIC I/Q MIXER
15 - 23.6 GHz
MxN Spurious Outputs
Harmonics of LO
nLO Spur at RF Port
LO Freq. (GHz)
1
15.5
17
18.5
20
21.5
23
47
49
50
47
50
53
2
51
56
63
73
72
71
nLO
mRF
0
1
2
3
4
0
xx
34
87
xx
xx
1
-9
0
65
87
xx
2
29
46
82
92
84
3
xx
61
62
86
92
4
xx
xx
87
90
92
3
MIXERS - CHIP
LO = + 15 dBm
Values in dBc below input LO level measured at RF Port.
RF = 17.6 GHz @ -10 dBm
LO = 17.5 GHz @ +15 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF / IF Input
LO Drive
Channel Temperature
Continuous Pdiss (T=85°C)
(derate 5.22 mW/°C above 85°C)
Thermal Resistance (R
TH
)
(junction to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+20 dBm
+ 27 dBm
150°C
340 mW
Standard
191.5 °C/W
-65 to +150 °C
-55 to +85 deg °C
Class 1A
GP-2
Alternate
[2]
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information
[1]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004”
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
8. OVERALL DIE SIZE ±.002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 14
HMC523
v00.1104
GaAs MMIC I/Q MIXER
15 - 23.6 GHz
Pad Descriptions
Pad Number
Function
Description
This pad is AC coupled and matched to
50 Ohms from 15 to 23.6 GHz.
Interface Schematic
1
RF
3
4
LO
This pad is AC coupled and matched to
50 Ohms from 15 to 23.6 GHz.
This pad is DC coupled. For applications not requir-
ing operation to DC, this port should be DC blocked
externally using a series capacitor whose value has
been chosen to pass the necessary IF frequency
range. For operation to DC, this pad must not
source/sink more than 3mA of current or die non-
function and possible die failure will result. Pads 5
and 6 are alternate IF ports.
The backside of the die must be connected
to RF/DC ground.
MIXERS - CHIP
2 (5)
IF2
3 (6)
IF1
GND
Assembly Diagrams
3 - 142
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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