HMC518
v00.0904
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
1
AMPLIFIERS - CHIP
Typical Applications
The HMC518 is ideal for use as a LNA or driver ampli-
fier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Features
Noise Figure: 3.0 dB
Gain: 15 dB
OIP3: 23 dBm
Single Supply: +3V @ 65 mA
50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC518 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier (LNA) which
covers the 20 to 32 GHhz frequency range. The
HMC518 provides 15 dB of small signal gain, 3.0 dB
of noise figure and has an output IP3 greater than
23 dBm. The chip can easily be integrated into hy-
brid or MCM assemblies due to its small size. All data
is tested with the chip in a 50 Ohm test fixture con-
nected via 0.075mm (3 mil) ribbon bonds of minimal
length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter
bondwires may also be used to make the RFIN and
RFOUT connections.
Electrical Specifications,
T
A
= +25° C, Vdd 1, 2, 3 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
9
12
Min.
Typ.
20 - 28
15
0.015
3.0
13
15
12
14
23
65
9
0.025
4.0
10
Max.
Min.
Typ.
28 - 32
13
0.015
3.5
10
10
12
16
25
65
0.025
5.5
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
1 - 168
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC518
v00.0904
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
Broadband Gain & Return Loss
20
15
10
5
GAIN (dB)
0
-5
-10
-15
-20
-25
16
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
Gain vs. Temperature
20
18
16
14
GAIN (dB)
1
AMPLIFIERS - CHIP
S21
S11
S22
12
10
8
6
4
2
0
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
+25C
+85C
-55C
Input Return Loss vs. Temperature
0
+25C
+85C
-55C
Output Return Loss vs. Temperature
0
-4
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
-8
-10
-12
-15
+25C
+85C
-55C
-16
-20
-20
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
-25
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
0
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
Output IP3 vs. Temperature
35
30
+25C
+85C
-55C
OIP3 (dBm)
25
20
15
10
5
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
+25C
+85C
-55C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 16
HMC518
v00.0904
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
1
AMPLIFIERS - CHIP
P1dB vs. Temperature
20
Psat vs. Temperature
20
16
P1dB (dBm)
Psat (dBm)
16
12
12
+25C
+85C
-55C
8
+25C
+85C
-55C
8
4
4
0
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
0
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
Power Compression @ 29 GHz
20
Pout (dBm), GAIN (dB), PAE(%)
+25C
+85C
-55C
16
12
Pout
Gain
PAE
8
4
0
-20
-15
-10
-5
0
5
INPUT POWER (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 29 GHz
20
18
GAIN (dB), P1dB (dBm)
16
Gain
14
12
10
8
6
4
2
0
2.5
3
Vdd (Vdc)
Noise Figure
P1dB
10
9
8
7
6
5
4
3
2
1
0
3.5
NOISE FIGURE (dB)
1 - 170
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC518
v00.0904
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
+2.5
+3.0
+3.5
Idd (mA)
61
65
69
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
RF Input Power (RFin)(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+7 dBm
175 °C
2.65 W
34 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
1
AMPLIFIERS - CHIP
Note: Amplifier will operate over full voltage ranges shown
above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
Standard
GP-1
[2]
[1]
Alternate
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 17
HMC518
v00.0904
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
1
AMPLIFIERS - CHIP
Pad Descriptions
Pad Number
1
Function
RFIN
Description
This pad is AC coupled and matched to
50 Ohms from 20 - 32 GHz.
Interface Schematic
2, 3, 4
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
5
RFOUT
This pad is AC coupled and matched to
50 Ohms from 20 - 32 GHz.
These pads must be connected to RF/DC
ground for proper operation.
6, 7, 8
G3, 2, 1
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
Note: G1, G2 and G3 must be connected to RF/DC ground.
1 - 172
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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