HMC497LP4
/
497LP4E
v02.0506
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 100 - 4000 MHz
Typical Applications
The HMC497LP4 / HMC497LP4E is suitable for
various modulation systems:
• UMTS, GSM or CDMA Basestations
• Fixed Wireless or WLL
• ISM Transceivers, 900 & 2400 MHz
• GMSK, QPSK, QAM, SSB Modulators
Features
Very Low Noise Floor, -161 dBm/Hz
Very High Linearity, +22 dBm OIP3
High Output Power, +9 dBm Output P1dB
High Modulation Accuracy
DC – 700 MHz Baseband Input
9
MODULATORS - SMT
Functional Diagram
General Description
The HMC497LP4 & HMC497LP4E are low noisehigh
linearity Direct Quadrature Modulator RFICs which
are ideal for digital modulation applications from
100 - 4000 MHz including; Cellular/3G, Broadband
Wireless Access & ISM circuits. Housed in a compact
4x4 mm (LP4) SMT QFN package, the RFIC requires
minimal external components & provides a low cost
alternative to more complicated double upconversion
architectures. The RF output port is single-ended
and matched to 50 Ohms with no external components.
The LO requires -6 to +6 dBm and can be driven in
either differential or single-ended mode while the
baseband inputs will support modulation inputs from
DC - 700 MHz typical. This device is optimized for
a supply voltage of +4.5V to +5.5V and consumes
170 mA @ +5.0V supply.
Electrical Specifications,
See Test Conditions on following page herein.
Parameter
Frequency Range, RF
Output P1dB
Output Noise Floor
Output IP3
Output Power
Carrier Feedthrough (uncalibrated)
Sideband Suppression
(uncalibrated)
LO Port Return Loss
RF Port Return Loss
+4
Min.
Typ.
450 - 960
+8
-161
+22
+6
-32
43
25
11
+3
Max.
Min.
Typ.
1700 - 2200
+8
-159
+22
+5
-30
42
15
20
+2
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
MHz
dBm
dBm/Hz
dBm
dBm
dBm
dBc
dB
dB
2200 - 2700
+7
-157
+20
+5
-26
33
14
17
0
3400 - 4000
+6
-150
+17
+3
-24
22
13
11
9 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC497LP4
/
497LP4E
v02.0506
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 100 - 4000 MHz
Electrical Specifications,
(continued)
Parameter
RF Output
RF Frequency Range
RF Return Loss
LO Input
LO Frequency Range
LO Input Power
LO Port Return Loss
Baseband Input Port
Baseband Port Bandwidth
Baseband Input DC Voltage (Vbbdc)
Baseband Input DC Bias Current (Ibbdc)
Single-ended Baseband Input Capacitance
DC Power Requirements
Supply Voltage (Vcc1, Vcc2)
Supply Current (Icc1, Icc2)
Single-ended.
De-embed to the lead of the device.
See Test Conditions Below
+4.5
+5.0
168
+5.5
V
mA
3 dB Bandwidth with 50Ω source.
DC
+1.4
+1.5
90
4.5
700
+1.6
MHz
V
μA
100
-6
0
15
4000
+6
MHz
dBm
dB
100
15
4000
MHz
dB
Conditions
Min.
Typ.
Max.
Units
9
MODULATORS - SMT
pF
Test Conditions:
Unless Otherwise Specified, the Following Test Conditions Were Used
Parameter
Temperature
Baseband Input Frequency
Baseband Input DC Voltage (Vbbdc)
Baseband Input AC Voltage
(Peak to Peak Differential, I and
Condition
+25 °C
200 kHz
+1.5V
1.6V
800 mV per tone @ 150 & 250 kHz
20 MHz
+5.0V
0 dBm
Single-Ended through LON
Refer to HMC497LP4 Application Schematic Herein
Uncalibrated
Baseband Input AC Voltage for OIP3 Measurement (Peak to Peak Differential, I and
Frequency Offset for Output Noise Measurements
Supply (Vcc1, Vcc2)
LO Input Power
LO Input Mode
Mounting Configuration
Sideband & Carrier Feedthrough
Calibrated vs. Uncalibrated Test Results
During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from
the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The “Uncalibrated, +25 °C” Sideband
and Carrier Suppression plots were measured at room temperature, while the “Uncalibrated, over Temperature”
Sideband and Carrier Suppression plots represent the worst case uncalibrated suppression levels measured at T=
-40 °C, +25 °C, and +85 °C.
The “Calibrated, + 25 °C” Sideband Suppression data was plotted after a manual adjustment of the I/Q amplitude
balance and I/Q phase offset (skew) at +25 °C, and at each LO input power level. The +25 °C adjustment settings
were held constant during tests over temperature. The “Calibrated, over Temperature” plots represent the worst case
calibrated Sideband Suppression levels at T= -40 °C, +25 °C, and +85 °C.
The “Calibrated, +25 °C” Carrier Suppression data was plotted after a manual adjustment of the Ip/In & Qp/Qn DC
offsets at +25 °C, and at each LO input power level. The +25 °C adjustment settings were held constant during tests
over temperature. The “Calibrated, over Temperature” plots represent the worst case Carrier Suppression levels
measured at T= -40 °C, +25 °C, and +85 °C.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 25
HMC497LP4
/
497LP4E
v02.0506
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 100 - 4000 MHz
Wideband Performance
vs. Frequency Over Temperature
10
OUTPUT POWER
Output IP3, P1dB & Noise Floor
@ 20 MHz Offset vs. Frequency
Over Temperature
-5
-10
-15
-20
OUTPUT P1dB (dBm), OUTPUT IP3 (dBm)
0
CARRIER FEEDTHROUGH (dBm),
SIDEBAND SUPPRESSION (dBc)
30
OUTPUT IP3
-120
OUTPUT NOISE FLOOR (dBm/Hz)
OUTPUT POWER (dBm)
5
CARRIER FEEDTHROUGH
20
-130
-25
-30
-35
-40
10
OUTPUT P1dB
-140
0
0
NOISE FLOOR
-150
-5
SIDEBAND SUPPRESSION
-45
-50
-55
-10
MEASUREMENT NOISE FLOOR
-160
9
MODULATORS - SMT
-10
0
400
-60
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
-20
0
400
-170
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
Uncalibrated Carrier Feedthrough*
vs. Frequency Over Temperature
10
CARRIER FEEDTHROUGH (dBm)
0
-10
-20
-30
-40
-50
-60
-70
0
400
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
+25C
+85C
-40C
Calibrated Carrier Feedthrough*
vs. Frequency Over Temperature
10
CARRIER FEEDTHROUGH (dBm)
0
-10
-20
-30
-40
-50
-60
-70
0
400
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
+25C
+85C
-40C
Sideband Suppression
vs. Frequency Over Temperature
10
SIDEBAND SUPPRESSION (dBc)
0
+25C
+85C
-40C
Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
RF
LO
-10
-20
-30
-40
-50
-60
-70
0
400
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
0
400
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
* See note titled “Calibrated vs. Uncalibrated test results” herein.
9 - 26
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC497LP4
/
497LP4E
v02.0506
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 100 - 4000 MHz
Wideband Performance
vs. Frequency Over LO Power
10
0
-5
OUTPUT POWER (dBm)
5
OUTPUT POWER
Output IP3, P1dB & Noise Floor
@ 20 MHz Offset vs. Frequency
Over LO Power
OUTPUT P1dB (dBm), OUTPUT IP3 (dBm)
30
OUTPUT IP3
-120
OUTPUT NOISE FLOOR (dBm/Hz)
CARRIER FEEDTHROUGH (dBm),
SIDEBAND SUPPRESSION (dBc)
-10
-15
-20
20
-130
CARRIER FEEDTHROUGH
-25
-30
-35
-40
10
OUTPUT P1dB
-140
0
0
NOISE FLOOR
-150
-5
SIDEBAND SUPPRESSION
-45
-50
-55
-10
MEASUREMENT NOISE FLOOR
-160
-10
0
400
-60
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
-20
0
400
-170
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
9
MODULATORS - SMT
Uncalibrated Carrier Feedthrough
[1]
vs. Frequency Over LO Power
10
CARRIER FEEDTHROUGH (dBm)
0
-10
-20
-30
-40
-50
-60
-70
0
400
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
-6 dBm
0 dBm
+6 dBm
Calibrated Carrier Feedthrough
[1]
vs. Frequency Over LO Power
10
CARRIER FEEDTHROUGH (dBm)
0
-10
-20
-30
-40
-50
-60
-70
0
400
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
-6 dBm
0 dBm
+6 dBm
Wideband Performance
vs. Frequency Over Supply Voltage
[2]
10
0
-5
OUTPUT POWER (dBm)
5
OUTPUT POWER
Output IP3, P1dB & Noise Floor
@ 20 MHz vs. Offset Frequency
Over Supply Voltage
[2]
OUTPUT P1dB (dBm), OUTPUT IP3 (dBm)
30
OUTPUT IP3
-120
OUTPUT NOISE FLOOR (dBm/Hz)
CARRIER FEEDTHROUGH (dBm),
SIDEBAND SUPPRESSION (dBc)
-10
-15
-20
20
-130
CARRIER FEEDTHROUGH
-25
-30
-35
-40
10
OUTPUT P1dB
-140
0
0
NOISE FLOOR
-150
-5
SIDEBAND SUPPRESSION
-45
-50
-55
-10
MEASUREMENT NOISE FLOOR
-160
-10
0
400
-60
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
-20
0
400
-170
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (GHz)
[1] See note titled “Calibrated vs. Uncalibrated test results” herein.
[2] Supply voltage from +4.5 to +5.5V.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 27
HMC497LP4
/
497LP4E
v02.0506
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 100 - 4000 MHz
ACPR & Output Noise @ 20 MHz Offset
for WCDMA @ 2140 MHz
-60
-130
OUTPUT NOISE (dBm/Hz)
Output Noise @ 20 MHz Offset
vs. LO Power Over Temperature
-140
-145
T=+25C
T=+85C
T=- 40C
OUTPUT NOISE (dBm/Hz)
-65
ACPR (dBc)
-140
-150
-70
-150
-155
-75
-160
-160
9
MODULATORS - SMT
-80
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-170
-5
-165
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
LO POWER (dBm)
WCDMA CHANNEL POWER (dBm)
Compression Characteristic @ 2140 MHz
10
0
Power & Linearity @ 2140 MHz
vs. Baseband Voltage
10
9
OUTPUT POWER (dBm)
8
7
6
5
4
3
2
1
5
OUTPUT POWER
10
15
OIP3 (dBm)
OUTPUT IP3
20
25
POWER (dBm)
-10
-20
-30
-40
-50
0.8
2 TONES OUTPUT POWER (dBm)
3rd ORDER INTERMOD (dBm)
0
0
0.9
1
2
INPUT BASEBAND VOLTAGE (Vp-p diff)
0.9
1
2
0.8
INPUT BASEBAND VOLTAGE PER TONE (Vp-p diff)
EVM vs. LO Harmonic Level & Sideband
Rejection for EDGE @ 900 MHz
1200
1100
1000
EVM (m%rms)
900
800
700
-16 dBc
LO 2
nd
EVM vs. LO Harmonic Level & Sideband
Rejection for EDGE @ 1900 MHz
2000
1800
SBR: -40 dBc
2
1600
EVM (m%rms)
1400
1200
1000
800
LO 3 Harmonic Level
-70 dBc
-30 dBc
SBR: -42 dBc
2
rd
Harmonic Level
-30 dBc
600
500
400
-70
SBR: -48 dBc
2
SBR: -48 dBc
2
600
-65
-60
-55
rd
-50
-45
-40
-35
-30
-30
-25
-20
nd
-15
-10
-5
LO 3 Harmonic Level (dBc)
LO 2 Harmonic Level (dBc)
Note 1: W-CDMA (Modulation Set-up for ACPR Mode); The Baseband I and Q input signals were generated using “Test Model 1 with 64 channels”
settings in the Agilent E3844C.
Note 2: The I/Q baseband amplitude and phase inputs were offset to achieve Sideband Rejection (SBR) levels. LO = +6 dBm, SSB Power = 0 dBm
9 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
