HMC450QS16G
/
450QS16GE
v02.0406
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
5
AMPLIFIERS - SMT
Typical Applications
The HMC450QS16G / HMC450QS16GE is ideal for
power and driver amplifier applications:
• GSM, GPRS, & Edge
• CDMA & WCDMA
• Base Stations & Repeaters
Features
Gain: 26 dB
32% PAE @ 28.5 dBm Output Power
+40 dBm Output IP3
Integrated Power Control (Vpd)
Included in the HMC-DK002 Designer’s Kit
Functional Diagram
General Description
The HMC450QS16G & HMC450QS16GE are high
efficiency GaAs InGaP HBT Medium Power MMIC
amplifiers operating between 800 and 1000 MHz.
The amplifier is packaged in a low cost, surface
mount 16 lead package and offers the same pinout
and functionality as the higher band HMC413QS16G
1.6-2.3 GHz PA. With a minimum of external
components, the amplifier provides 26 dB of gain,
+40 dBm OIP3 and +28.5 dBm of saturated power
from a +5.0V supply voltage. The integrated power
control (Vpd) can be used for full power down or RF
output power/current control. The combination of high
gain and high output IP3 make the HMC450QS16G
& HMC450QS16GE ideal linear drivers for Cellular,
PCS & 3G applications.
Electrical Specifications,
T
A
= +25° C, Vs = +5V, Vpd = +4V
[1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
[2]
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
tON, tOFF
37
23
23
Min.
Typ.
0.8 - 1.0
26
0.015
17
13
26
28.5
40
8
310
12
10
0.025
Max.
Units
GHz
dB
dB/°C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
[1] Specifications and data reflect HMC450QS16G measured using the application circuit found herein. Contact the HMC Applications Group for
assistance in optimizing performance for your application.
[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.
5 - 238
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC450QS16G
/
450QS16GE
v02.0406
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
Broadband Gain & Return Loss
30
25
20
15
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
-25
-30
0.6
0.7
0.8
0.9
1
1.1
1.2
Gain vs. Temperature
32
30
28
GAIN (dB)
26
24
22
20
0.7
+25 C
+85 C
-40 C
5
AMPLIFIERS - SMT
S21
S11
S22
0.8
0.9
FREQUENCY (GHz)
1
1.1
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0.7
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
+25 C
+85 C
-40 C
-5
+25 C
+85 C
-40 C
-10
-15
0.8
0.9
FREQUENCY (GHz)
1
1.1
-20
0.7
0.8
0.9
FREQUENCY (GHz)
1
1.1
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
Power Down Isolation vs. Temperature
0
-10
-20
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
0.7
+25 C
+85 C
-40 C
-30
-40
-50
-60
-70
-80
0.7
+25 C
+85 C
-40 C
0.8
0.9
FREQUENCY (GHz)
1
1.1
0.8
0.9
FREQUENCY (GHz)
1
1.1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 23
HMC450QS16G
/
450QS16GE
v02.0406
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
5
AMPLIFIERS - SMT
P1dB vs. Temperature
30
29
28
27
26
25
24
23
22
21
20
0.7
0.8
0.9
FREQUENCY (GHz)
1
1.1
+25 C
+85 C
-40 C
Psat vs. Temperature
30
29
28
27
PSAT (dBm)
26
25
24
23
22
21
20
0.7
0.8
0.9
FREQUENCY (GHz)
1
1.1
+25 C
+85 C
-40 C
Output IP3 vs. Temperature
46
44
P1dB (dBm)
Noise Figure vs. Temperature
12
10
NOISE FIGURE (dB)
8
6
4
2
0
0.7
+25 C
+85 C
-40 C
42
OIP3 (dBm)
40
38
36
34
32
30
0.7
+25 C
+85 C
-40 C
0.8
0.9
FREQUENCY (GHz)
1
1.1
0.8
0.9
FREQUENCY (GHz)
1
1.1
Gain and Power vs.
Supply Voltage @ 900 MHz, Vpd= 4V
30
GAIN (dB), P1dB (dBm), Psat (dBm)
Gain, Power, OIP3 and Supply Current
vs. Power Down Voltage @ 900 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
40
36
32
28
24
20
16
12
8
2.8
3
3.2
3.4
Vpd (Vdc)
3.6
3.8
4
Gain
Psat
P1dB
OIP3
Icc
360
320
280
240
Icc (mA)
200
160
120
80
40
28
26
24
Gain
Psat
P1dB
22
20
2.75
3
3.25
3.5
3.75
4
4.25
4.5
4.75
5
5.25
Vcc SUPPLY VOLTAGE (Vdc)
5 - 240
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC450QS16G
/
450QS16GE
v02.0406
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
ACPR vs. Supply Voltage @ 900 MHz
CDMA IS95, 9 Channels Forward
-25
-30
-35
-40
ACPR (dBc)
-45
-50
-55
-60
-65
-70
-75
-80
-85
Source ACPR
8
10
12
14
16
18
20
22
24
5V
5.5V
CDMA IS95
Frequency: 900 MHz
Integration BW: 1.228 MHz
Forward Link, 9 Channels
Power Compression @ 900 MHz
40
Pout (dBm), GAIN (dB), PAE (%)
36
32
28
24
20
16
12
8
4
0
-20
-16
-12
-8
-4
0
4
8
Pout (dBm)
Gain (dB)
PAE (%)
5
AMPLIFIERS - SMT
4.5V
INPUT POWER (dBm)
Channel Power (dBm)
Power Dissipation@ 900 MHz
2
POWER DISSIPATION (W)
1.8
Max Pdiss @ +85C
1.6
1.4
1.2
1
-20
-15
-10
-5
0
5
10
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 24
HMC450QS16G
/
450QS16GE
v02.0406
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
5
AMPLIFIERS - SMT
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd1, Vpd2)
RF Input Power (RFin)(Vs = +5.0
Vdc, VPD = +4.0 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 28 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
+5.0 Vdc
+10 dBm
150 °C
1.86 W
35 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current
vs. Supply Voltage
Vs (V)
4.75
5.0
5.25
Icq (mA)
300
310
325
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Package Information
Part Number
HMC450QS16G
HMC450QS16GE
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H450
XXXX
H450
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
5 - 242
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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