MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF5S21130/D
MRF5S21130
RF Power Field Effect Transistors MRF5S21130R3
N–Channel Enhancement–Mode Lateral MOSFETs
MRF5S21130S
Designed for W–CDMA base station applications at frequencies from 2110
MRF5S21130SR3
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
The RF MOSFET Line
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2–carrier W–CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1
–
5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 28 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 — –37 dBc
ACPR — –39 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2170 MHz, 28 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465B–03, STYLE 1
NI–880
MRF5S21130
CASE 465C–02, STYLE 1
NI–880S
MRF5S21130S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
65
–0.5, +15
315
2
–65 to +150
200
92
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 92 W CW
Case Temperature 80°C, 28 W CW
Symbol
R
θJC
0.56
0.56
Max
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1200 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.6
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.7
3.7
0.26
7.5
3.5
—
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 28 W Avg., I
DQ
= 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 28 W Avg., I
DQ
= 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 28 W Avg., I
DQ
= 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 –10 MHz and f2 +10 MHz
referenced to carrier channel power.)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 28 W Avg., I
DQ
= 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 –5 MHz and f2 +5 MHz.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 28 W Avg., I
DQ
= 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
(1) Part is internally matched both on input and output.
G
ps
12
13.5
—
dB
η
24
26
—
%
IM3
–37
–35
dBc
ACPR
—
–39
–37
dBc
IRL
—
–12
–9
dB
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
2
MOTOROLA RF DEVICE DATA
V
bias
R1
+
C1
R2
C3
C5
Z9
Z7
Z2
C7
C8
Z3
Z4
Z5
Z6
C6
Z10
C17
DUT
Z8
Z11
Z12
Z13
C11
C9
+
C13
+
C15
+
C20
V
supply
RF
INPUT Z1
C18
Z14
Z15
Z16
RF
OUTPUT
C19
C10
+
C2
C4
C12
+
C14
+
C16
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
0.500″ x 0.083″ Microstrip
0.995″ x 0.083″ Microstrip
0.905″ x 0.083″ Microstrip
0.159″ x 1.024″ Microstrip
0.117″ x 1.024″ Microstrip
0.749″ x 0.083″ Microstrip
0.117″ x 1.000″ Microstrip
Z9, Z10
Z11
Z12
Z13
Z14, Z15
Z16
PCB
0.709″ x 0.083″ Microstrip
0.415″ x 1.000″ Microstrip
0.531″ x 0.083″ Microstrip
0.994″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.430″ x 0.083″ Microstrip
Taconic TLX8, 0.76 mm,
ε
r
= 2.55
Figure 1. MRF5S21130 Test Circuit Schematic
Table 1. MRF5S21130 Test Circuit Component Designations and Values
Part
C1, C2, C13, C14, C15, C16
C3, C4, C11, C12
C5, C6, C7, C9, C10, C18, C19
C8
C17
C20
R1, R2
Description
10
µF,
35 V Tantalum Capacitors
220 nF Chip Capacitors (1812)
6.8 pF 100B Chip Capacitors
0.1 pF 100B Chip Capacitor
0.5 pF 100B Chip Capacitor
220
µF,
63 V Electrolytic Capacitor, Radial
1 kW, 1/4 W Chip Resistors
Value, P/N or DWG
293D1106X9035D
1812Y224KXA
100B6R8CW
100B0R1BW
100B0R5BW
13668221
Manufacturer
Vishay–Sprague
Vishay–Vitramon
ATC
ATC
ATC
Philips
MOTOROLA RF DEVICE DATA
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
3
C1
R1
R2
C3
C9
C11
C13 C15
C20
C5
CUT OUT AREA
C18
C7
C8
C6
C17
C19
C2
C4
C10
C12
C14 C16
MRF5S21130
Rev 0
Figure 2. MRF5S21130 Test Circuit Component Layout
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
IM3
ACPR
IRL
V
DD
= 28 Vdc, P
out
= 28 W (Avg.), I
DQ
= 1200 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
G
ps
η
35
30
25
20
-28
-32
-36
-40
2100
2120
2140
2160
2180
2200
-44
2220
η
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
-10
-15
-20
-25
-30
6
2060
2080
f, FREQUENCY (MHz)
Figure 3. 2–Carrier W–CDMA Broadband Performance
15
IMD3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
14.5
G ps , POWER GAIN (dB)
14
I
DQ
= 1600 mA
1400 mA
1200 mA
1000 mA
800 mA
-25
-30
-35
-40
-45
-50
-55
-60
-65
1
10
800 mA
1000 mA
I
DQ
= 1600 mA
1400 mA
1200 mA
13.5
13
12.5
12
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
1
10
100
1000
P
out
, OUTPUT POWER (WATTS) PEP
IRL, INPUT RETURN LOSS (dB)
V
DD
= 28 Vdc
f1 = 2135 MHz,
f2 = 2145 MHz
Two-Tone Measurement,
10 MHz Tone Spacing
100
1000
11.5
11
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two–Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-25
-30
-35
-40
-45
-50
-55
-60
0.1
5th Order
7th Order
3rd Order
Pout , OUTPUT POWER (dBm)
58
57
56
55
54
53
52
51
100
50
35
37
39
P3dB = 53.02 dBm (200.5 W)
Ideal
P1dB = 52.5 dBm (178 W)
Actual
V
DD
= 28 Vdc, I
DQ
= 1200 mA
Pulsed CW, 5
µsec(on),
1 msec(off)
Center Frequency = 2140 MHz
41
43
45
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, P
out
= 130 W (PEP), I
DQ
= 1200 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
1
10
TWO-TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
