Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBTA92
CMBTA93
SILICON EPITAXIAL TRANSISTORS
P–N–P transistor
Marking
CMBTA92 = 2D
CMBTA93 = 2E
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T
amb
= 25 °C
D.C. current gain
–I
C
= 10 mA; –V
CE
= 10 V
Transition frequency at f = 100 MHz
–I
C
= 10 mA; –V
CE
= 20 V
Collector–base capacitance at f = 1 MHz
I
E
= 0; –V
CB
= 20 V
CMBT A92
–V
CBO
max. 300
–V
CEO
max. 300
–V
EBO
max.
max.
–I
C
P
tot
h
FE
f
T
C
cb
min.
min.
max.
6
A93
200 V
200 V
V
mA
mW
5
500
250
40
50
MHz
8
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
CMBTA92
CMBTA93
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T
amb
= 25 °C
Storage temperature
Junction temperature
THERMAL CHARACTERISTICS
T
j
= P (R
th j–t
+ R
th t–s
+ R
th s–a
) + T
amb
Thermal resistance
from junction to ambient
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
T
stg
Tj
CMBT A92
max. 300
max. 300
max.
max.
max
–55
max.
A93
200 V
200 V
5
V
500
mA
250
mW
to +150
°C
150
°C
R
th j–a
500
K/W
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–V
(BR)CEO
min.
–I
C
= 1 mA; I
B
= 0
Collector–base breakdown voltage
–V
(BR)CBO
min.
–I
C
= 100
µA;
I
E
= 0
Collector cut–off current
–I
CBO
max.
–V
CB
= 200 V; I
E
= 0
–I
CBO
max.
–V
CB
= 160 V; I
E
= 0
Emitter–base breakdown voltage
–V
(BR)EBO
min.
–I
E
= 100
µA;
I
C
= 0
Emitter cut–off current
–I
EBO
max.
I
C
= 0; –V
BE
= 3 V;
Collector–base capacitance at f= 1 MHz
C
cb
max.
I
E
= 0; –V
CB
= 20 V
Saturation voltages
–V
CEsat
max.
–I
C
= 20 mA; –I
B
= 2 mA
–V
BEsat
max.
–I
C
= 20 mA; –I
B
= 2 mA
D.C. current gain
h
FE
min.
–I
C
= 1 mA; –V
CE
= 10 V
h
FE
min.
–I
C
= 10 mA; –V
CE
= 10 V
h
FE
min.
–I
C
= 30 mA; –V
CE
= 10 V
300
300
0.25
–
5
0.1
6
0.5
0.9
25
40
25
200 V
200 V
–
µA
0.25
µA
V
0.1
mA
8
pF
0.5 V
0.9 V
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax +q 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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