Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT6517
HIGH–VOLTAGE TRANSISTOR
N–P–N transistor
Marking
CMBT6517 = 1Z
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T
amb
= 25°C
D.C. current gain
–I
C
= 10 mA; –V
CE
= 10 V
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
h
FE
max.
max.
max.
max.
max
min.
350
350
5
500
225
30
V
V
V
mA
mW
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
–V
CBO
Collector–emitter voltage (open base)
–V
CEO
Emitter–base voltage (open collector)
–V
EBO
Collector current (d.c.)
–I
C
P
tot
Total power dissipation at T
amb
= 25°C
Storage temperature
T
stg
Junction temperature
Tj
max.
350
max.
350
max.
5
max.
500
max
225
–55 to +150
max.
150
V
V
V
mA
mW
°C
°C
Continental Device India Limited
Data Sheet
Page 1 of 3
CMBT6517
THERMAL CHARACTERISTICS
T
j
= P (R
th j–t
+ R
th s–a
) + T
amb
Thermal resistance
from junction to ambient
R
th j–a
556
°C/mW
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–I
C
= 1 mA
–V
(BR)CEO
min.
Collector–base breakdown voltage
–I
C
= 100
µA
–V
(BR)CBO
min.
Emitter–base breakdown voltage
–I
E
= 10
µA
–V
(BR)EBO
min.
Collector cut–off current
–V
CB
= 250 V
–I
CBO
max.
Emitter cut-off current
–V
EB
= 5V
–I
EBO
max.
Output capacitance at f = 1 MHz
–V
CB
= 20 V
C
c
max.
Input capacitance at f = 1 MHz
–V
EB
= 0.5 V
C
e
max.
Saturation voltages
–I
C
= 10 mA; –I
B
= 1 mA
–I
C
= 20 mA; –I
B
= 2 mA
–I
C
= 30 mA; –I
B
= 3 mA
–I
C
= 50 mA; –I
B
= 5 mA
D.C. current gain
–I
C
= 1 mA; –V
CE
= 10 V
–I
C
= 10 mA; –V
CE
= 10 V
–I
C
= 30 mA; –V
CE
= 10 V
–I
C
= 50 mA; –V
CE
= 10 V
–I
C
= 100 mA; –V
CE
= 10 V
Base emitter voltage
I
C
= 100 mA; V
CE
= 10 V
Transition frequency
I
C
= 10 mA; V
CE
= 20 V; f = 20 MHz
–V
CEsat
–V
BEsat
–V
CEsat
–V
BEsat
–V
CEsat
–V
BEsat
–V
CEsat
max.
max.
max.
max.
max.
max.
max.
350
350
5
50
50
5
80
0.3
0.75
0.35
0.85
0.5
0.9
1.0
V
V
V
nA
nA
pF
pF
V
V
V
V
V
V
V
h
FE
h
FE
h
FE
h
FE
h
FE
V
BE(on)
f
T
min.
min.
min.
max.
min.
max.
min.
max.
min.
max.
20
30
30
200
20
200
15
2
40
200
V
MHz
MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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