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MJD86

产品描述NPN SILICON PLANAR TRANSISTOR
文件大小138KB,共4页
制造商CDIL
官网地址http://www.cdilsemi.com
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MJD86概述

NPN SILICON PLANAR TRANSISTOR

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
CJD86
DPAK (TO-252)
Plastic Package
For High Speed Switching Application
ABSOLUTE MAXIMUM RATINGS (T
c
=25ºC )
DESCRIPTION
SYMBOL
V
CBO
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Mounted on Ceramic Board (250mm
X 8.0 mm)
Junction Temperature
Storage Temperature Range
2
VALUE
60
50
6.0
3.0
6.0
0.5
1.5
UNITS
V
V
V
A
A
W
W
ºC
ºC
V
CEO
V
EBO
I
C
I
CP
P
D
T
j
T
stg
150
- 55 to +150
*These ratings are applicable when surface mounted on the minimum pad sizes recommended. (see page no 3)
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
I
C
=1mA, I
B
=0
V
CEO
Collector Emitter Voltage
V
CBO
Collector Base Voltage
I
C
=10µA, V
CE
=2V
V
EBO
I
E
=10µA, I
C
=0
Emitter Base Voltage
V
CB
=40V, I
E
=0
I
CBO
Collector Cut Off Current
V
EB
=4V, I
C
= 0
I
EBO
Emitter Cut Off Current
**I
C
=100mA, V
CE
=2V
*h
FE
DC Current Gain
I
C
=3A, V
CE
=2V
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
**h
FE
Classifications
MARKING
f
T
C
ob
R : 100 - 200,
CDIL
MJD86R
XY MX
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
S : 140 - 280,
CDIL
MJD86S
XY MX
T : 200 - 400,
CDIL
MJD86T
XY MX
MIN
50
60
6.0
TYP MAX
UNITS
V
V
V
µA
µA
100
35
1.0
1.0
560
150
25
U : 280 - 560
CDIL
MJD86U
XY MX
MHz
pF
CDIL
MJD86
XY MX
XY= Date Code
**Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
CJD86Rev100605E
Continental Device India Limited
Data Sheet
Page 1 of 4

MJD86相似产品对比

MJD86 CJD86 MJD86R MJD86S MJD86T MJD86U
描述 NPN SILICON PLANAR TRANSISTOR NPN SILICON PLANAR TRANSISTOR NPN SILICON PLANAR TRANSISTOR NPN SILICON PLANAR TRANSISTOR NPN SILICON PLANAR TRANSISTOR NPN SILICON PLANAR TRANSISTOR

 
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