HANBit
HMF1M32M8S
FLASH-ROM MODULE 4MByte (1M x 32-Bit), 72pin-SIMM, 5V
Part No. HMF1M32M8S (Switching for write enable/disable)
GENERAL DESCRIPTION
The HMF1M32M8S is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a
x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 72 -pin, both-sided, FR4-printed circuit
board.In order to write control, the HMF1M32M8S provides Write Enable and Write Disable selection by SMT switch.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CE-UU1, /CE_UM1, /CE_LM1,
/CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module’s 4 bytes independently. Output enable
(/OE) and write enable (/WE) can set the memory input and output ..
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL -
compatible
FEATURES
w
Access time: 70, 90 and 120ns
wSwitching
for write enable and disable.
w
High-density 4MByte design
w
High-reliability, low-power design
w
Single + 5V
±
0.5V power supply
w
Easy memory expansion
w
All inputs and outputs are TTL-compatible
w
FR4-PCB design
w
Low profile 72-pin SIMM
w
Minimum 100,000 write/erase cycle
w
Sector erases architecture
w
Sector group protection
w
Temporary sector group unprotection
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
-70
-90
-120
18
SYMBOL
VSS
A3
A2
A1
A0
VCC
A11
/OE
A10
VCC
/CE-LL2
/CE-LL1
DQ7
DQ0
DQ1
DQ2
DQ6
DQ5
PIN
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
PIN ASSIGNMENT
SYMBOL
DQ4
DQ3
/WE
A17
A14
A13
VCC
DQ8
DQ9
DQ10
/CE-LM2
VCC
/CE-LM1
DQ15
DQ14
DQ13
DQ12
DQ11
PIN
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
SYMBOL
A18
A16
VSS
A6
VCC
A5
A4
VCC
/CE-UM2
/CE-UM1
DQ23
DQ16
DQ17
DQ18
DQ22
DQ21
DQ20
DQ19
PIN
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
SYMBOL
VCC
A15
A12
A7
VCC
A8
A9
DQ24
DQ25
DQ26
/CE-UU2
/CE-UU1
DQ31
DQ30
DQ29
DQ28
DQ27
VSS
OPTIONS
w
Timing
70ns access
90ns access
120ns access
w
Packages
72-pin SIMM
MARKING
SIMM TOP VIEW
M
URL:
www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co.,Ltd.
HANBit
HMF1M32M8S
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE
NOTE: X means don’t care
/OE
X
H
L
H
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Q
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
RATING
Ambient Operating Temperature
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VALUE
0 oC to 70 oC
-65 oC to 125 oC
-0.5V to 7.0V
-0.
5V to 7.0V
VCC to Ground Potential
A9 & /OE
-0.2V to 7.0V
-0.2V to 12.5V
wNOTICE:
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended period may affect reliability.
Specifications contained within the following tables are subject to change.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±5%
device Supply Voltages
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
V
CC
Vcc
V
SS
MIN
4.75V
4.5V
0
0
TYP.
MAX
5.25V
5.5V
0
DC AND OPERATING CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V )
PARAMETER
Input Leakage Current
Output Leakage Current
Input High Voltage
TEST CONDITIONS
Vcc=Vcc max, V
IN
= GND to Vcc
Vcc=Vcc max, VOUT= GND to Vcc
SYMBOL
I
L1
I
L0
V
IH
0.7x V
CC
MIN
MAX
±1.0
±10
V
CC
+
0.3
UNITS
µA
µA
V
URL:
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REV.02(August,2002)
3
HANBit Electronics Co.,Ltd.
HANBit
Input Low Voltage
Output High Voltage
Output Low Voltage
Vcc Active Current for Read
Vcc Active Current for Program
Vcc Active Current for Erase
Vcc Standby Current
Notes
I
OH
= -2.5mA, Vcc = Vcc min
I
OL
= 12mA, Vcc =Vcc min
/CE=V
IL,
/OE=V
IH
/CE=V
IL,
/OE=V
IH
/CE=V
IL,
/OE=V
IH
/CE= V1
H
V
IL
V
OH
V
OL
I
CC1
I
CC2
I
CC2
I
cc3
HMF1M32M8S
-0.5
2.4
0.45
30
40
40
5
0.8
V
V
V
mA
mA
mA
mA
1.V
1L min.
=-1.0V for pulse width is equal to or less than 50ns. V
1L min.
=-2.0V for pulse width is equal to or less than 20
2.V
1H max.
=V
CC
+1.5V for pulse width is equal to or less than 20ns. If V
1H
is over the specified maximum value, read operation
cannot be guaranteed.
SWITCHING TEST CIRCUITS
5.0V
2.7kΩ
Device
Under
Test
C
L
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
AC CHARACTERISTICS
u
Read Only Operations Characteristics
SPEED
PARAMETER
t
RC
t
ACC
t
CE
t
OE
t
DF
t
OEH
DESCRIPTION
Read Cycle Time
Address Access time
Chip Enable to Access time
Output Enable time
Chip Enable to Output High-Z
Output Enable Hold Time
- 70
70
70
70
30
20
0
-90
90
90
90
35
20
0
-120
120
120
120
50
30
0
UNIT
ns
ns
ns
ns
ns
ns
URL:
www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co.,Ltd.
HANBit
t
OH
Output Hold Time From Addresses, /CE or
/OE
0
0
HMF1M32M8S
0
ns
u
Erase/Program Operations
PARAMETER
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
t
VCS
DESCRIPTION
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
/CE Hold Time
Write Pulse Width
Write Pulse Width High
Byte Programming Operation
Sector Erase Operation
Vcc set up time (Note 1)
-70
70
0
45
30
0
0
0
0
0
35
20
7
1
50
-90
90
0
45
45
0
0
0
0
0
45
20
7
1
50
-120
120
0
50
50
0
0
0
0
0
50
20
7
1
50
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
µs
Notes
: : 1. Not 100% tested
URL:
www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co.,Ltd.
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