HANBit
HMF1M32M8G
FLASH-ROM MODULE 4MByte (1M x 32-Bit), 72pin-SIMM, 5V
Part No. HMF1M32M8G
GENERAL DESCRIPTION
The HMF1M32M8G is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a
x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 72 -pin, single-sided, FR4-printed circuit
board. Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to
enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and
output..When FROM module is disable condition the module is becoming power standby mode, system designer can get low -
power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are
TTL-compatible.
FEATURES
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Access time: 55, 70, 90 and 120ns
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High-density 4MByte design
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High-reliability, low-power design
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Single + 5V
±
0.5V power supply
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Easy memory expansion
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All inputs and outputs are TTL-compatible
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FR4-PCB design
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Low profile 72-pin SIMM
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Minimum 1,000,000 write/erase cycle
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Sector erases architecture
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Sector group protection
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Temporary sector group unprotection
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
-55
-70
-90
-120
22
23
M
24
A17
A14
A13
18
19
20
21
120ns access
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Packages
72-pin SIMM
SYMBOL
Vss
A3
A2
A1
A0
Vcc
A11
/OE
A10
Vcc
/CE_LL2
/CE_LL1
DQ7
DQ0
DQ1
DQ2
DQ6
DQ5
DQ4
DQ3
/WE
PIN ASSIGNMENT
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
SYMBOL
Vcc
DQ8
DQ9
DQ10
/CE_LM2
Vcc
/CE_LM1
DQ15
DQ14
DQ13
DQ12
DQ11
A18
A16
Vss
A6
Vcc
A5
A4
Vcc
/CE_UM2
/CE_UM1
DQ23
DQ16
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
SYMBOL
DQ17
DQ18
DQ22
DQ21
DQ20
DQ19
Vcc
A15
A12
A7
Vcc
A8
A9
DQ24
DQ25
DQ26
/CE_UU2
/CE_UU1
DQ31
DQ30
DQ29
DQ28
DQ27
Vss
OPTIONS
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Timing
55ns access
70ns access
90ns access
MARKING
URL :
www.hbe.co.kr
REV.02(August,2002)
1
72-PIN SIMM
TOP VIEW
HANBit Electronics Co., Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
DQ 0-DQ31
A0-A18
DQ 32
A19
HMF1M32M8G
A0-18
A0-18
DQ0-7
/WE
/OE
/CE-LL2
A0-18
DQ0-7
/WE
U1
/
CE
/CE-LL1
/OE
U5
/CE
A0-18
DQ8-15
/WE
/OE
A0-18
DQ8-15
/
WE
U2
/CE
/CE-LM1
/
OE
/CE
U6
/CE-LM2
A0-18
DQ 16-23
/WE
/OE
/CE-UM2
A0-18
DQ16-23
/WE
U3
/CE
/CE-UM1
/OE
U7
/
CE
A0-18
/WE
/WE
/OE
/OE
DQ24-31
/WE
A0-18
DQ 24-31
/WE
/OE
U4
/CE
/
OE
U8
/CE
/CE-UU2
/CE-UU1
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE: X means don’t care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Q
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
URL :
www.hbe.co.kr
REV.02(August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
T
STG
HMF1M32M8G
RATING
-2.0V to +7.0V
-2.0V to +7.0V
-65oC to +125oC
Operating Temperature
T
A
-55oC to +125 oC
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Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions ab ove those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±5%
device Supply Voltages
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
V
CC
Vcc
V
SS
MIN
4.75V
4.5V
0
0
TYP.
MAX
5.25V
5.5V
0
DC AND OPERATING CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V )
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Current for Read(1)
Vcc Active Current for Program
/CE = V
IL
, /OE=V
IH
or Erase(2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V
IH
.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
/CE= V
IH
I
CC3
V
LKO
3.2
1.0
4.2
mA
V
I
CC2
40
mA
TEST CONDITIONS
Vcc=Vcc max, V
IN
= GND to Vcc
Vcc=Vcc max, VOUT= GND to Vcc
I
OH
= -2.5mA, Vcc = Vcc min
I
OL
= 12mA, Vcc =Vcc min
/CE = V
IL
, /OE=V
IH
,
SYMBOL
I
L1
I
L0
V
OH
V
OL
I
CC1
2.4
0.45
12
MIN
MAX
±1.0
±1.0
UNITS
µA
µA
V
V
mA
URL :
www.hbe.co.kr
REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Sector Erase Time
-
TYP.
1
MAX.
UNIT
HMF1M32M8G
COMMENTS
Excludes 00H programming
8
sec
prior to erasure
Excludes system-level
overhead
Excludes system-level
Byte Programming Time
-
7
300
µs
Chip Programming Time
-
3.6
10.8
sec
overhead
CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
TEST SETUP
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
V
IN
= 0
V
OUT
= 0
V
IN
= 0
4
8
8
6
12
12
pF
pF
pF
TYP.
MAX
UNIT
Notes
: Test conditions T
A
= 25
o
C, f=1.0 MHz.
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETER
SYMBOLS
JEDEC
t
AVAV
t
AVQV
STANDARD
t
RC
t
ACC
Address to Output Delay
/OE = V
IL
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
CE
t
OE
t
DF
t
DF
t
QH
/CE or /OE, Whichever Occurs First
Chip Enable to Output Delay
Chip Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
Min
0
0
ns
/OE = V
IL
Max
Max
Max
Max
55
30
18
18
90
35
20
20
ns
ns
ns
ns
Read Cycle Time
/CE = V
IL
Max
55
90
ns
Min
55
90
ns
DESCRIPTION
TEST SETUP
-55
-90
UNIT
Notes
: Test Conditions : Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF
Input rise and fall times : 5 ns , In case of 55ns-5ns
Input pulse levels : 0 .45V to 2.4V, In case of 55ns- 0.0V-3.0V
Timing measurement reference level
URL :
www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
Input : 0.8V, Incase of 55ns-1.5V
Output : 2.0V, In case of 55ns-1.5V
5.0V
HMF1M32M8G
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
u
Erase/Program Operations
PARAMETER SYMBOLS
DESCRIPTION
JEDEC
t
AVAV
t
AVWL
t
WLAX
t
DVWH
t
WHDX
STANDARD
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
t
VCS
Notes
:
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
/CE Hold Time
Write Pulse Width
Write Pulse Width High
Byte Programming Operation
Sector Erase Operation (Note1)
Vcc set up time
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Min
55
0
40
25
0
0
0
0
0
30
20
7
1
50
90
0
45
45
0
0
0
0
0
45
20
7
1
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
µs
-55
-90
UNIT
URL :
www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
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