HANBit
HMD1M32M2EG
4Mbyte(1Mx32) EDO Mode, 1K Refresh, 72Pin SIMM, 5V Design
Part No. HMD1M32M2EG
DESCRIPTION
The HMD1M32M2EG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in
42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The HMD1M32M2EG is
optimized for application to the systems, which are required high density and large capacity such as main memory of the
computers and an image memory systems, and to the others, which are, requested compact size.
The HMD1M32M2G provides common data and outputs.
Features
w
Part Indentification
-
HMD1M32M2EG
–
Gold plate Lead
w
72 pins Single In-Line Package
w
EDO Mode Capability
w
Single +5V± 0.5V power supply
w
Fast Access Time & Cycle Time
TRAC
HMD1M32M2EG-45
HMD1M32M2EG-50
HMD1M32M2EG-60
w
Low Power
Active: 1,870/1,650/1,430 mW(MAX)
Standby: 11mW(CMOS level : MAX)
w
/RAS Only Refresh, /CAS before /RAS Refresh,
Hidden Refresh Capability
w
All inputs and outputs TTL Compatible
w
1,024 Refresh Cycles/16ms
45
50
60
tCAC
13
15
17
tRC
69
84
104
tHPC
16
20
25
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
FUNCTION
Address Inputs
Data Input/Output
Row Address Strobe
Column Address Strobe
Read/Write Enable
PIN ASSIGNMENT
SYMBOL
Vss
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
NC
DQ4
DQ20
DQ5
DQ21
DQ6
PIN
PD1
–
PD4
Vcc
Vss
NC
-
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
SYMBOL
DQ22
DQ7
DQ23
A7
NC
Vcc
A8
A9
NC
/RAS2
NC
NC
NC
NC
Vss
/CAS0
/CAS2
/CAS3
/CAS1
/RAS0
NC
NC
/WE
NC
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
FUNCTION
Presence Detect
Power (+5V)
Ground
No Connection
-
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SYMBOL
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
Vcc
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
Vss
PIN DESCRIPTION
Pin
A0
–
A9
DQ0
–
DQ31
/RAS0, /RAS2
/CAS0 - /CAS3
/WE
URL:www.hbe.co.kr
REV. 1.0 (August. 2002)
-1-
HANBit
HMD1M32M2EG
FUNCTIONAL BLOCK DIAGRAM
U0
/RAS0
/RAS
/CAS0
/LCAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0-DQ7
/CAS1
/UCAS
/OE
DQ8-DQ15
/WE
A0-A9
U1
/RAS2
/RAS
/CAS2
/LCAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16-DQ23
/CAS3
/UCAS
/OE
DQ24-DQ31
/WE
/WE
A0-A9
A0-A9
Vcc
Vss
0.22uF Capacitor
C0
–
C1
U0-U1
U0-U1 1Mx16 DRAM
U0-U1
URL:www.hbe.co.kr
REV. 1.0 (August. 2002)
-2-
HANBiT Electronics Co., Ltd
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ABSOLUTE MAXIMUM RATINGS*
SYMBOL
TA
TSTG
VIN/VOUT
VCC
IOUT
PD
PARAMETER
Ambient Temperature under Bias
Storage Temperature (Plastic)
Voltage on any Pin Relative to Vss
Power Supply Voltage
Short Circuit Output Current
Power Dissipation
RATING
0 ~ 70
-55 ~ 125
-1.0 ~ 7.0
-1.0 ~ 7.0
50
2
HMD1M32M2EG
UNIT
C
C
V
V
mA
W
*NOTE:
1. Stress greater than above absolute Maximum Ratings? May cause permanent damage to the device.
RECOMMENDED DC OPERATING CONDITIONS (TA = 0 ~ 70C)
PARAMETER
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*NOTE:
All voltages referenced to Vcc
SYMBOL
Vcc
Vss
V
IH
V
IL
MIN
4.5
0
2.4
-1.0
TYP.
5.0
0
-
-
MAX
5.5
0
Vcc+1
0.8
UNIT
V
V
V
V
DC AND OPERATING CHARACTERISTICS
SYMBOL
Output Level
VOH
Output High Level Voltage (IOUT = -5mA)
Output Level
VOL
Output Low Level Voltage (IOUT = 4.2mA)
Operating Current
ICC1
Average Power Supply Operating Current
(/RAS,/CAS,Address Cycling :
tRC
=
tRC
min)
Standby Current (TTL)
ICC2
Power Supply Standby Current
(/RAS,/CAS = VIH)
/RAS Only Refresh Current
ICC3
Average Power Supply Current
mA
/RAS Only Mode
(/RAS Cycling, /CAS = VIH,:
tRC
=
tRC
min)
ICC
EDO Mode Current
Average Power Supply Current
ICC4
EDO Mode
60ns
-
340
mA
1,3
70ns
300
2
60ns
-
340
-
4
mA
60ns
70ns
-
-
-
-
340
300
-
mA
1,2
0
0.4
V
2.4
Vcc
V
PARAMETER
MIN
MAX
UNIT
NOTE
URL:www.hbe.co.kr
REV. 1.0 (August. 2002)
-3-
HANBiT Electronics Co., Ltd
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(/RAS = VIL, /CAS, Address Cycling : tPC = tPC min)
Standby Current (CMOS)
ICC5
Power Supply Standby Current
(/RAS,/CAS >= Vcc
–
0.2V)
/CAS before /RAS Refresh Current
ICC6
(tRC
=
tRC
min)
60ns
70ns
-
-
-
70ns
-
HMD1M32M2EG
300
mA
1,3
2
mA
340
300
mA
Standby Current /RAS = VIH
ICC7
/CAS = VIL
DOUT = Enable
Input Leakage Current
II(L)
Any Input (0V<=VIN<=7V)
All Other Pins Not Under Test = 0V
Output Leakage Current
IO(L)
(DOUT is Disabled, 0V<=VOUT<=7V)
Note:
1.Icc depends on output load condition when the device is selected.
Icc (max) is specified at the output open condition.
2. Address can be changed once or less while /RAS = VIL.
3. Address can be changed once or less while /CAS = VIH
o
-
10
mA
1
-10
10
uA
-10
10
uA
CAPACITANCE
( T
A
=25 C, Vcc = 5V+/- 10%, f = 1Mhz )
SYMBOL
C
I1
C
I2
C
I3
C
I4
C
DQ1
MIN
-
-
-
-
-
MAX
35
34
27
27
20
UNITS
pF
pF
pF
pF
pF
NOTE
1
1,2
1,2
1,2
1,2
DESCRIPTION
Input Capacitance (A0-A9)
Input Capacitance (/WE)
Input Capacitance (/RAS0,/RAS2)
Input Capacitance (/CAS0-/CAS3)
Input/Output Capacitance (DQ0-31)
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. /CAS = VIH to disable DOUT.
AC CHARACTERISTICS
( 0 C
≤
T
A
≤
70oC , Vcc = 5V±10%, See notes 1,15.)
o
The GMM731000CNS/SG writes data only in early write cycle (twcs>=twcs(min))
Delayed write cycle is not available because of I/O common.
URL:www.hbe.co.kr
REV. 1.0 (August. 2002)
-4-
HANBiT Electronics Co., Ltd
.
HANBit
READ, WRITE AND REFRESH CYCLE
(Common Parameters)
HMD1M32M2G-6
SYMBOL
tRC
tPR
tRAS
tCAS
tASR
tRAH
tASC
tcah
tRCD
tRAD
tRSH
tCSH
tCRP
tT
tREF
PARAMETER
MIN
Random Read or Write Cycle Time
/RAS Precharge Time
/RAS Pulse Width
/CAS Pulse Width
Row Address Setup Time
Row Address Hold Time
Column Address Setup Time
Column Address Hold Time
/RAS to /CAS Delay Time
/RAS to Column Address Delay Time
/RAS Hold Time
/CAS Hold Time
/CAS to /RAS Precharge Time
Transition Time (Rise and Fall)
Refresh Period (1024 Cycle)
110
40
60
15
0
10
0
10
20
15
15
60
5
3
-
MAX
-
-
10K
10K
-
-
-
-
45
30
-
-
-
50
16
MIN
130
50
70
18
0
10
0
15
20
15
18
70
5
3
-
HMD1M32M2EG
HMD1M32M2G-7
UNIT
MAX
-
-
10K
10K
-
-
-
-
52
35
-
-
-
50
16
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
8
9
10
NOTE
Read Cycle
HMD1M32M2G-6
SYMBOL
tRAC
tCAC
tAA
tRCS
tRCH
tRRH
tRAL
tOFF
PARAMETER
MIN
Access Time from /RAS
Access Time from /CAS
Access Time from Column Address
Read Command Setup Time
Read Command Hold Time to /CAS
Read Command Hold Time to /RAS
Column Address to /RAS Lead Time
Output Buffer Turn-off Time
-
-
-
0
0
0
30
-
MAX
60
15
30
-
-
-
-
15
MIN
-
-
-
0
0
0
35
-
MAX
70
18
35
-
-
-
-
15
ns
ns
ns
ns
ns
ns
ns
ns
7
6
6
2,3
3,4
3,5,14
HMD1M32M2G-7
UNIT
NOTE
Write Cycle
HMD1M32M2G-6
SYMBOL
twcs
PARAMETER
MIN
Write Command Setup Time
0
MAX
-
MIN
0
MAX
-
ns
11
HMD1M32M2G-7
UNIT
NOTE
URL:www.hbe.co.kr
REV. 1.0 (August. 2002)
-5-
HANBiT Electronics Co., Ltd
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