CMXT2207
SURFACE MOUNT
SUPERmini™
DUAL COMPLEMENTARY
SILICON TRANSISTOR
Central
DESCRIPTION
:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMXT2207 type is
a dual complementary silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, designed for
small signal general purpose and switching applications.
MARKING CODE: X07
SOT-26 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ
JA
NPN
75
40
6.0
600
350
-65 to +150
357
PNP
60
60
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
ICBO
VCB=60V
10
ICBO
VCB=50V
10
ICBO
VCB=60V, TA=125°C
10
ICBO
VCB=50V, TA=125°C
10
IEBO
VEB=3.0V
10
ICEV
VCE=60V, VEB=3.0V
10
ICEV
VCE=30V, VBE=0.5V
50
BVCBO
IC=10µA
75
60
BVCEO
IC=10mA
40
60
BVEBO
IE=10µA
6.0
5.0
VCE(SAT)
IC=150mA, IB=15mA
0.3
0.4
VCE(SAT)
IC=500mA, IB=50mA
1.0
1.6
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
1.3
VBE(SAT)
IC=500mA, IB=50mA
2.0
2.6
hFE
VCE=10V, IC=0.1mA
35
75
hFE
VCE=10V, IC=1.0mA
50
100
hFE
VCE=10V, IC=10mA
75
100
hFE
VCE=10V, IC=150mA
100
300
100
300
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=500mA
40
50
fT
VCE=20V, IC=20mA, f=100MHz
300
fT
VCE=20V, IC=50mA, f=100MHz
200
UNITS
nA
nA
µA
µA
nA
nA
nA
V
V
V
V
V
V
V
MHz
MHz
R2 (06-August 2003)
Central
TM
CMXT2207
SURFACE MOUNT
SUPERmini™
DUAL COMPLEMENTARY
SILICON TRANSISTOR
Semiconductor Corp.
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
PNP
NPN
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN MAX
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
8.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
Cib
VEB=2.0V, IC=0, f=1.0MHz
30
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
rb’Cc
VCB=10V, IE=20mA, f=31.8MHz
150
NF
VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz
4.0
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
45
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
10
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
25
40
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
100
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
80
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
30
UNITS
pF
pF
pF
kΩ
kΩ
x10-4
x10-4
µmhos
µmhos
ps
dB
ns
ns
ns
ns
ns
ns
ns
ns
SOT-26 CASE - MECHANICAL OUTLINE
6
5
4
Q2
Q1
1
2
3
LEAD CODE:
1)
2)
3)
4)
5)
6)
EMITTER Q1
BASE Q1
COLLECTOR Q2
EMITTER Q2
BASE Q2
COLLECTOR Q1
MARKING CODE: X07
R2 (06-August 2003)
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