IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
3.3V CMOS OCTAL
BUFFER/DRIVER
WITH 3-STATE OUTPUTS
AND 5 VOLT TOLERANT I/O
• 0.5 MICRON CMOS Technology
• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
• V
CC
= 3.3V ± 0.3V, Normal Range
• V
CC
= 2.7V to 3.6V, Extended Range
• CMOS power levels (0.4µ W typ. static)
µ
• Rail-to-rail output swing for increased noise margin
• All inputs, outputs, and I/O are 5V tolerant
• Supports hot insertion
• Available in SOIC, SSOP, QSOP, and TSSOP packages
IDT74LVC541A
FEATURES:
DESCRIPTION:
DRIVE FEATURES:
• High Output Drivers: ±24mA
• Reduced system switching noise
The LVC541A octal buffer/driver is built using advanced dual metal CMOS
technology. This device is ideal for driving bus lines or buffer memory
address registers. This device features inputs and outputs on opposite sides
of the package that facilitate printed circuit board layout. The 3-state control
gate is a 2-input AND gate with active-low inputs so that if either output enable
(OE
1
or
OE
2
) input is high, all eight outputs are in the high-impedance state.
The LVC541A has been designed with a ±24mA output driver. This driver
is capable of driving a moderate to heavy load while maintaining speed
performance.
To ensure the high-impedance state during power up or power down,
OE
should be tied to V
CC
through a pullup resistor; the minimum value of the
resistor is determined by the current-sinking capability of the driver.
Inputs can be driven from either 3.3V or 5V devices. This feature allows
the use of this device as a translator in a mixed 3.3V/5V system environment.
APPLICATIONS:
• 5V and 3.3V mixed voltage systems
• Data communication and telecommunication systems
FUNCTIONAL BLOCK DIAGRAM
OE
1
OE
2
1
19
A
1
2
18
Y
1
TO SEVEN OTHER CHANNELS
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
1
© 1999 Integrated Device Technology, Inc.
DECEMBER 1999
DSC-4649/1
IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
OE
1
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
CC
OE
2
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Description
Max
V
TERM
T
STG
I
OUT
I
IK
I
OK
I
CC
I
SS
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Continuous Clamp Current,
V
I
< 0 or V
O
< 0
Continuous Current through each
V
CC
or GND
–0.5 to +6.5
–65 to +150
–50 to +50
–50
±100
Unit
V
°C
mA
mA
mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
OUT
C
I/O
Parameter
(1)
Input Capacitance
Output Capacitance
I/O Port Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
V
IN
= 0V
Typ.
4.5
5.5
6.5
Max.
6
8
8
Unit
pF
pF
pF
SOIC/ SSOP/ QSOP/ TSSOP
TOP VIEW
NOTE:
1. As applicable to the device type.
PIN DESCRIPTION
Pin Names
OE
1
,
OE
2
Ax
Yx
Data Inputs
Data Outputs
Description
Output Enable Inputs (Active LOW)
FUNCTION TABLE
(1)
Inputs
OE
1
L
L
H
X
NOTE:
1. H = HIGH Voltage Level
X = Don’t Care
L = LOW Voltage Level
Z = High-Impedance
Outputs
xAx
L
H
X
X
xYx
L
H
Z
Z
OE
2
L
L
X
H
2
IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Operating Condition: T
A
= –40°C to +85°C
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
I
OFF
V
IK
V
H
I
CCL
I
CCH
I
CCZ
∆I
CC
High Impedance Output Current
(3-State Output pins)
Input/Output Power Off Leakage
Clamp Diode Voltage
Input Hysteresis
Quiescent Power Supply Current
V
CC
= 0V, V
IN
or V
O
≤
5.5V
V
CC
= 2.3V, I
IN
= –18mA
V
CC
= 3.3V
V
CC
= 3.6V
V
IN
= GND or V
CC
—
—
—
—
—
—
—
–0.7
100
—
—
—
±50
–1.2
—
10
10
500
µA
V
mV
µA
V
CC
= 3.6V
V
O
= 0 to 5.5V
—
—
±10
µA
Parameter
Input HIGH Voltage Level
Input LOW Voltage Level
Input Leakage Current
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 3.6V
V
I
= 0 to 5.5V
Test Conditions
Min.
1.7
2
—
—
—
Typ.
(1)
—
—
—
—
—
Max.
—
—
0.7
0.8
±5
µA
V
Unit
V
Quiescent Power Supply Current
Variation
3.6
≤
V
IN
≤
5.5V
(2)
One input at V
CC
- 0.6V, other inputs at V
CC
or GND
µA
NOTES:
1. Typical values are at V
CC
= 3.3V, +25°C ambient.
2. This applies in the disabled state only.
OUTPUT DRIVE CHARACTERISTICS
Symbol
V
OH
Parameter
Output HIGH Voltage
V
CC
= 2.3V
V
CC
= 2.3V
V
CC
= 2.7V
V
CC
= 3V
V
CC
= 3V
V
OL
Output LOW Voltage
V
CC
= 2.3V to 3.6V
V
CC
= 2.3V
V
CC
= 2.7V
V
CC
= 3V
I
OH
= – 24mA
I
OL
= 0.1mA
I
OL
= 6mA
I
OL
= 12mA
I
OL
= 12mA
I
OL
= 24mA
Test Conditions
(1)
V
CC
= 2.3V to 3.6V
I
OH
= – 0.1mA
I
OH
= – 6mA
I
OH
= – 12mA
Min.
V
CC
– 0.2
2
1.7
2.2
2.4
2.2
—
—
—
—
—
Max.
—
—
—
—
—
—
0.2
0.4
0.7
0.4
0.55
V
Unit
V
NOTE:
1. V
IH
and V
IL
must be within the min. or max. range shown in the DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE table for the appropriate V
CC
range.
T
A
= – 40°C to + 85°C.
3
IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
OPERATING CHARACTERISTICS, V
CC
= 3.3V ± 0.3V, T
A
= 25°C
Symbol
C
PD
C
PD
Parameter
Power Dissipation Capacitance per Transceiver Outputs enabled
Power Dissipation Capacitance per Transceiver Outputs disabled
Test Conditions
C
L
= 0pF, f = 10Mhz
Typical
33
2
Unit
pF
SWITCHING CHARACTERISTICS
(1)
V
CC
= 2.7V
Symbol
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
t
SK
(o)
Parameter
Propagation Delay
Ax to Yx
Output Enable Time
OEx
to Yx
Output Disable Time
OEx
to Yx
Output Skew
(2)
Min.
Max.
5.6
7.5
7.7
V
CC
= 3.3V ± 0.3V
Min.
1.5
1.5
1.5
Max.
5.1
7
7
1
Unit
ns
ns
ns
ns
—
—
—
—
—
—
NOTES:
1. See TEST CIRCUITS AND WAVEFORMS. T
A
= – 40°C to + 85°C.
2. Skew between any two outputs of the same package and switching in the same direction.
4
IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
TEST CIRCUITS AND WAVEFORMS
TEST CONDITIONS
Symbol
V
LOAD
V
IH
V
T
V
LZ
V
HZ
C
L
V
CC(1)
= 3.3V±0.3V V
CC(1)
= 2.7V
6
2.7
1.5
300
300
50
6
2.7
1.5
300
300
50
V
CC(2)
= 2.5V±0.2V
2 x Vcc
Vcc
Vcc / 2
150
150
30
Unit
V
V
V
mV
mV
pF
SAME PHASE
INPUT TRANSITION
t
PLH
OUTPUT
t
PLH
OPPOSITE PHASE
INPUT TRANSITION
t
PHL
t
PHL
V
IH
V
T
0V
V
OH
V
T
V
OL
V
IH
V
T
0V
LVC Link
V
CC
500Ω
Pulse
(1, 2)
Generator
V
IN
D.U.T.
R
T
500Ω
C
L
V
OUT
V
LOAD
Open
GND
CONTROL
INPUT
Propagation Delay
ENABLE
DISABLE
V
IH
V
T
0V
V
LOAD/2
V
OL+
V
LZ
V
OL
V
OH
V
OH-
V
HZ
0V
LVC Link
t
PZL
OUTPUT
SWITCH
NORMALLY
V
LOAD
LOW
t
PZH
OUTPUT
SWITCH
NORMALLY
GND
HIGH
V
LOAD/2
V
T
t
PHZ
V
T
0V
t
PLZ
LVC Link
Test Circuit for All Outputs
DEFINITIONS:
C
L
= Load capacitance: includes jig and probe capacitance.
R
T
= Termination resistance: should be equal to Z
OUT
of the Pulse Generator.
NOTES:
1. Pulse Generator for All Pulses: Rate
≤
10MHz; t
F
≤
2.5ns; t
R
≤
2.5ns.
2. Pulse Generator for All Pulses: Rate
≤
10MHz; t
F
≤
2ns; t
R
≤
2ns.
NOTE:
1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH.
Enable and Disable Times
SWITCH POSITION
Test
Open Drain
Disable Low
Enable Low
Disable High
Enable High
All Other Tests
Switch
V
LOAD
GND
Open
DATA
INPUT
TIMING
INPUT
ASYNCHRONOUS
CONTROL
SYNCHRONOUS
CONTROL
V
IH
V
T
0V
V
OH
V
T
V
OL
V
OH
V
T
V
OL
t
SU
t
H
t
REM
t
SU
t
H
V
IH
V
T
0V
V
IH
V
T
0V
V
IH
V
T
0V
V
IH
V
T
0V
LVC Link
INPUT
Set-up, Hold, and Release Times
t
PLH1
t
PHL1
OUTPUT 1
t
SK
(x)
t
SK
(x)
LOW-HIGH-LOW
PULSE
t
W
HIGH-LOW-HIGH
PULSE
V
T
OUTPUT 2
t
PLH2
t
PHL2
V
T
Pulse Width
LVC Link
LVC Link
t
SK
(x)
= t
PLH2
-
t
PLH1
or
t
PHL2
-
t
PHL1
Output Skew - t
SK
(
X
)
NOTES:
1. For t
SK
(o) OUTPUT1 and OUTPUT2 are any two outputs.
2. For t
SK
(b) OUTPUT1 and OUTPUT2 are in the same bank.
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
