1N5820 thru 1N5822
Vishay Semiconductors
formerly General Semiconductor
Schottky Barrier Rectifier
DO-201AD
Features
Reverse Voltage
20 to 40V
Forward Current
3.0A
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low power loss, high efficiency
• For use in low voltage high frequency inverters,
free wheeling, and polarity protection applications
• Guardring for overvoltage protection
Mechanical Data
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Case:
JEDEC DO-201 AD molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds 0.375” (9.5mm) lead length,
5lbs. (2.3kg) tension
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 oz., 1.12 g
Packaging codes/options:
1/Bulk - 1.5K per container, 15K per box
4/1.4K per 13” reel, 5.6K per box
23/1K per ammo mag., 9K per box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
* Maximum repetitive peak reverse voltage
Maximum RMS voltage
* Maximum DC blocking voltage
* Non-repetitive peak reverse voltage
* Maximum average forward rectified current
0.375" (9.5mm) lead length at T
L
=95°C
* Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method) at T
L
=75°C
Typical thermal resistance
(2)
*Storage temperature range
Symbols
V
RRM
V
RMS
V
DC
V
RSM
I
F(AV)
I
FSM
R
θJA
R
θJL
T
J,
T
STG
(T
A
= 25°C unless otherwise noted)
1N5820
20
14
20
24
1N5821
30
21
30
36
3.0
80
40
10
-65 to +125
1N5822
40
28
40
48
Units
V
V
V
V
A
A
°C/W
°C
Electrical Characteristics
Parameter
Symbols
(1)
1N5820
0.475
0.850
1N5821
0.500
0.900
2.0
20
1N5822
0.525
0.950
Units
V
V
mA
* Maximum instantaneous forward voltage at 3.0
V
F
V
F
I
R
* Maximum instantaneous forward voltage at 9.4
(1)
* Maximum average reverse current at rated T
A
=25°C
DC blocking voltage
(1)
T
A
=100°C
*
JEDEC registered values
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500"
(12.7mm) lead length with 2.5 x 2.5” (63.5 x 63.5mm) copper pad
Document Number 88526
1-Jul-02
www.vishay.com
1
1N5820 thru 1N5822
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 - Forward Current
Derating Curve
Average Forward Current (A)
Resistive or Inductive Load
0.375" (9.5mm) lead length
3.0
Fig. 2 - Maximum Non-repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
80
70
60
50
40
30
20
10
4.0
T
J
= T
J
max.
8.3ms single half sine-wave
(JEDEC Method)
2.0
1.0
0
0
20
40
60
80
100
120
140
1
10
100
Lead Temperature (¡C)
Number of Cycles at 60 Hz
Fig. 3 - Typical Instantaneous Forward
Characteristics
Instantaneous Forward Current (A)
50
Fig. 4 - Typical Reverse
Characteristics
Instantaneous Reverse Current (mA)
10
T
J
= 125°C
Pulse Width = 300µs
1% Duty Cycle
T
J
= 125°C
1
10
1
T
J
= 75°C
0.1
0.1
T
J
= 25°C
0.01
T
J
= 25°C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction
Capacitance
Junction Capacitance (pF)
T
J
= 25°C
f=1.0 MH
Z
V
sig
=50mVp-p
Fig. 6 - Typical Transient
Thermal Impedance
Transient Thermal Impedance (°C/W)
100
1,000
10
100
1
10
0.1
1.0
10
100
0.1
0
0.1
1
10
100
Reverse Voltage (V)
www.vishay.com
2
t, Pulse Duration (sec.)
Document Number 88526
1-Jul-02
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