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1N5820/4E

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小344KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

1N5820/4E概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

1N5820/4E规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码DO-201AD
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性FREE WHEELING DIODE
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-201AD
JESD-30 代码O-PALF-W2
JESD-609代码e0
最大非重复峰值正向电流80 A
元件数量1
相数1
端子数量2
最高工作温度125 °C
最低工作温度-65 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压20 V
表面贴装NO
技术SCHOTTKY
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
1N5820 thru 1N5822
Vishay General Semiconductor
Schottky Barrier Rectifier
FEATURES
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-201AD
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
3.0 A
20 V, 30 V, 40 V
80 A
0.475 V, 0.500 V, 0.525 V
125 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case:
DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Non-repetitive peak reverse voltage
Maximum average forward rectified current 0.375" (9.5 mm) lead
length at T
L
= 95 °C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
V
RSM
I
F(AV)
I
FSM
T
J
, T
STG
1N5820
20
14
20
24
1N5821
30
21
30
36
3.0
80
- 65 to + 125
1N5822
40
28
40
48
UNIT
V
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
(1)
Maximum instantaneous forward voltage
(1)
Maximum average reverse current at rated
DC blocking voltage
(1)
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Document Number: 88526
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
155
TEST CONDITIONS
3.0
9.4
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
F
V
F
I
R
1N5820
0.475
0.850
1N5821
0.500
0.900
2.0
20
1N5822
0.525
0.950
UNIT
V
V
mA

 
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