SEMICONDUCTOR TECHNICAL DATA
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by MRF857/D
The RF Line
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800
–
960 MHz.
Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics
Output Power = 2.1 Watts CW
Minimum Power Gain = 12.5 dB
Minimum ITO = + 43 dBm
Typical Noise Figure = 5.25 dB
Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800
–
960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power
Will Withstand RF Input Overdrive of 0.4 W CW
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CLASS A
800
–
960 MHz
2.1 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 305D–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 50 C
Derate above 50 C
Operating Junction Temperature
Storage Temperature Range
Symbol
V CEO
V CBO
VEBO
PD
TJ
Tstg
Characteristic
Thermal Resistance (TJ = 150 C, TC = 50 C)
Symbol
R JC
Symbol
Min
Typ
Value
30
55
4
17
0.114
200
–
65 to +150
Unit
Vdc
Vdc
Vdc
Watts
W/ C
C
C
THERMAL CHARACTERISTICS
Max
8.4
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0)
Collector Cutoff Current (VCB = 24 V, IE = 0)
V (BR)CEO
V(BR)CES
V (BR)CBO
V (BR)EBO
ICES
28
55
55
4
—
35
85
85
5
—
—
—
—
—
1
Vdc
Vdc
Vdc
Vdc
mA
(continued)
Max
Unit
REV 3
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF857S
1
ELECTRICAL CHARACTERISTICS
—
continued
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, V CE = 5 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.3 A, f = 840
–
900 MHz,
Power Output = 2.1 W)
Load Mismatch
(Po = 2.1 W)
(VCE = 24 V, IC = 0.3 A, f = 840 MHz,
Load VSWR = 30:1, All Phase Angles)
RF Input Overdrive
(VCE = 24 V, IC = 0.3 A, f = 840 MHz)
No degradation
Third Order Intercept Point
(VCE = 24 V, IC = 0.3 A)
(f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order =
–
40 dBc)
Noise Figure
(VCE = 24 V, IC = 0.3 A, f = 900 MHz)
Input Return Loss
(VCE = 24 V, IC = 0.3 A, f = 840
–
900 MHz,
Power Output = 2.1 W)
P in(over)
—
Pg
12.5
13.5
—
dB
Cob
2.4
3.3
4.4
pF
hFE
30
60
120
—
Symbol
Min
Typ
Max
Unit
No Degradation in
Output Power
—
0.4
W
ITO
+ 43
+ 44.5
—
dBm
NF
IRL
—
—
5.25
–
15
—
–10
dB
dB
Table 1. MRF857S Common Emitter S–Parameters
VCE
(V)
24
IC
(A)
0.3
f
(MHz)
800
820
840
860
880
900
920
940
960
S 11
|S11|
0.915
0.915
0.915
0.913
0.914
0.914
0.913
0.915
0.916
165
165
165
164
164
163
163
162
162
|S21|
2.098
2.049
1.991
1.951
1.912
1.865
1.832
1.783
1.748
54
53
52
51
50
49
48
47
46
S21
|S12|
0.037
0.038
0.038
0.039
0.040
0.041
0.042
0.043
0.043
58
58
58
59
59
59
59
59
59
S12
|S22|
0.343
0.345
0.349
0.352
0.355
0.359
0.362
0.366
0.369
–157
–157
–157
–158
–158
–158
–158
–159
–159
S 22
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
840
870
900
1.5
1.7
1.5
Zin
(Ohms)
4.4
4.7
4.8
18.4
18.0
14.9
ZOL*
(Ohms)
–
26.3
–
26.1
–
26.2
V CE = 24 V, IC = 0.3 A, P o = 2.1 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
MRF857S
2
MOTOROLA RF DEVICE DATA
R1
R2
Q1
R8
VCE
F1
C1
+
V_SUPPLY
Q2
R9
R3
R4
R5
R7
+
R6
C5
L1
TL6
C6
TL2
TL1
INPUT
C10
TL5
TL10
TL3
TL9
TL8
C11
TL12
TL13
TL15
TL7
L2
DUT
C12
TL16
OUTPUT
TL11
TL14
C7
C8
C2
C3
B1
B2
C4
B3
R10
B4
+
C9
TL4
B1, B4
B2, B3
C1
C2, C8
C3, C9
C4, C7
C5, C6
C10, C12
C11
F1
L1, L2
Q1
Q2
Long Ferrite Bead, Fair Rite (2743021447)
Short Ferrite Bead, Fair Rite (2743019447)
250 F, 50 Vdc Electrolytic Capacitor
10 F, 50 Vdc Electrolytic Capacitor
0.1 F, Chip Capacitor
1000 pF, Chip Capacitor
100 pF, Chip Capacitor
43 pF, 100 Mil Chip Capacitor
0.8–8 pF, Johansen Gigatrim
1 A Micro–Fuse
5 Turns, 20 AWG, 0.126 ID, 46.2 nH
MMBT2222ALT1, NPN Transistor
BD136, PNP Transistor
R1
R2
R3
R4
R5
R6
R7
R8
R9, R10
TL1
–
TL16
V_Supply
V CE
Board
330 , 1/4 W
500 Potentiometer, 1/4 W
4.7K , 1/4 W
2 x 4.7K , 1/4 W
47 , 2 W
75 , 1/4 W
4.7 , 1/4 W
10 , 3 W
4 x 39 , 1/8 W Chip Resistors in Parallel
Microstrip Transmission Line
+ 27 Vdc 0.5 V Due to Resistor Tolerance
+ 24 Vdc @ 0.3 A
0.030 Glass–Teflon 2 oz. Cu, r = 2.55
Figure 1. MRF857S Class A RF Test Fixture Schematic
MOTOROLA RF DEVICE DATA
MRF857S
3
TYPICAL CHARACTERISTICS
15
Gpe
14.5
14
13.5
13
12.5
VSWR
12
830
840
850
860
870
880
f, FREQUENCY (MHz)
890
900
1
910
VCC = 24 Vdc
IC = 300 mA
Pout = 2.1 W (CW)
3.5
3
2.5
2
1.5
4
Figure 2. Performance of MRF857S in
Broadband Circuit
4
3.5
Pout
3
2.5
2
1.5
1
0.5
0
0
0.05
0.1
0.15
0.2
0.25
0.3
Pin, INPUT POWER (WATTS)
0.35
Gpe
VCC = 24 Vdc
IC = 300 mA
f = 870 MHz
16
15
14
13
12
11
10
9
8
0.4
1500
Tj = 150 C
Tf = 50 C
1000
500
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
VCE (Vdc)
Figure 3. MRF857S Output Power & Power Gain
versus Input Power
Figure 4. MRF857S DC SOA
850
800
750
700
Tj = 175 C
Tf = 50 C
1.00E+08
9.80E+06
1.00E+07
2.01E+06
1.00E+06
1.00E+05
4.82E+05
1.32E+05
4.03E+04
1.37E+04
5.05E+03
2.02E+03
8.67E+02
2
4
6
8
10 12 14 16 18 20 22 24 26 28
VCE (Vdc)
1.00E+02
100
120
140
160
180 200
220
TJ, JUNCTION TEMPERATURE ( C)
240
260
650
1.00E+04
600
550
50
00
1.00E+03
Figure 5. MRF857S DC SOA
(This device is MTBF limited for VCE 20 Vdc.)
Figure 6. MRF857S MTBF Factor versus
Junction Temperature
MRF857S
4
MOTOROLA RF DEVICE DATA
R3
R2
R1
Q1
R6
R5
+
R4
C4
B2
C5
L1
R10
C7
B3
C6
C9
+
C8
C12
C11
Q2
B4
R8
C1
C3
+
C2
R7
B1
R9
C10
L2
MRF857S
Figure 7. MRF857S Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF857S
5
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