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FM25CL64B-DGTR

产品描述Memory Circuit, 8KX8, CMOS, PDSO8, 4.50 X 4 MM, 0.95 MM PITCH, GREEN, TDFN-8
产品类别存储    存储   
文件大小499KB,共14页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
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FM25CL64B-DGTR概述

Memory Circuit, 8KX8, CMOS, PDSO8, 4.50 X 4 MM, 0.95 MM PITCH, GREEN, TDFN-8

FM25CL64B-DGTR规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码DFN
包装说明HVSON, SOLCC8,.16,37
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-N8
JESD-609代码e3
长度4.5 mm
内存密度65536 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
湿度敏感等级1
功能数量1
端子数量8
字数8192 words
字数代码8000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织8KX8
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装等效代码SOLCC8,.16,37
封装形状RECTANGULAR
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)260
电源3.3 V
认证状态Not Qualified
座面最大高度0.8 mm
最大待机电流0.000006 A
最大压摆率0.003 mA
最大供电电压 (Vsup)3.65 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层MATTE TIN
端子形式NO LEAD
端子节距0.95 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度4 mm
Base Number Matches1

文档预览

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FM25CL64B
64Kb Serial 3V F-RAM Memory
Features
64K bit Ferroelectric Nonvolatile RAM
Organized as 8,192 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
38 Year Data Retention (
@
+75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7-3.65V
200
A
Active Current (1 MHz)
3
A
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40C to +85C
8-pin “Green”/RoHS SOIC and TDFN Packages
Description
The FM25CL64B is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM25CL64B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been successfully transferred to the device. The next
bus cycle may commence immediately without the
need for data polling. In addition, the product offers
substantial write endurance compared with other
nonvolatile memories. The FM25CL64B is capable
of supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the FM25CL64B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25CL64B provides substantial benefits to
users of serial EEPROM as a hardware drop-in
replacement. The FM25CL64B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Top View
/CS
SO
/WP
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ordering Information
FM25CL64B-G
“Green” 8-pin SOIC
FM25CL64B-GTR
“Green” 8-pin SOIC,
Tape & Reel
FM25CL64B-DG
“Green”/RoHS 8-pin TDFN
FM25CL64B-DGTR
“Green”/RoHS 8-pin TDFN,
Tape & Reel
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.0
Jan. 2012
Page 1 of 14

FM25CL64B-DGTR相似产品对比

FM25CL64B-DGTR FM25CL64B-DG FM25CL64B-GTR FM25CL64B-G
描述 Memory Circuit, 8KX8, CMOS, PDSO8, 4.50 X 4 MM, 0.95 MM PITCH, GREEN, TDFN-8 Memory Circuit, 8KX8, CMOS, PDSO8, 4.50 X 4 MM, 0.95 MM PITCH, GREEN, TDFN-8 Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8 Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码 DFN DFN SOIC SOIC
包装说明 HVSON, SOLCC8,.16,37 HVSON, SOLCC8,.16,37 SOP, SOP8,.25 SOP, SOP8,.25
针数 8 8 8 8
Reach Compliance Code unknown unknown unknown unknown
JESD-30 代码 R-PDSO-N8 R-PDSO-N8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e3 e3 e3 e3
长度 4.5 mm 4.5 mm 4.9 mm 4.9 mm
内存密度 65536 bit 65536 bit 65536 bit 65536 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8 8 8
湿度敏感等级 1 1 1 1
功能数量 1 1 1 1
端子数量 8 8 8 8
字数 8192 words 8192 words 8192 words 8192 words
字数代码 8000 8000 8000 8000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
组织 8KX8 8KX8 8KX8 8KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 HVSON HVSON SOP SOP
封装等效代码 SOLCC8,.16,37 SOLCC8,.16,37 SOP8,.25 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260 260 260
电源 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 0.8 mm 0.8 mm 1.75 mm 1.75 mm
最大待机电流 0.000006 A 0.000006 A 0.000006 A 0.000006 A
最大压摆率 0.003 mA 0.003 mA 0.003 mA 0.003 mA
最大供电电压 (Vsup) 3.65 V 3.65 V 3.65 V 3.65 V
最小供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 MATTE TIN MATTE TIN Matte Tin (Sn) MATTE TIN
端子形式 NO LEAD NO LEAD GULL WING GULL WING
端子节距 0.95 mm 0.95 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 4 mm 4 mm 3.9 mm 3.9 mm
Base Number Matches 1 1 1 1

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