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FM24CL64B-GATR

产品描述Memory Circuit, 8KX8, CMOS, PDSO8
产品类别存储    存储   
文件大小220KB,共12页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
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FM24CL64B-GATR概述

Memory Circuit, 8KX8, CMOS, PDSO8

FM24CL64B-GATR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
包装说明SOP, SOP8,.25
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-G8
内存密度65536 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
端子数量8
字数8192 words
字数代码8000
最高工作温度125 °C
最低工作温度-40 °C
组织8KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
电源3.3 V
认证状态Not Qualified
筛选级别AEC-Q100
最大待机电流0.00002 A
最大压摆率0.00034 mA
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
Base Number Matches1

文档预览

下载PDF文档
Preliminary
AEC Q100 Grade 1 Compliant
FM24CL64B
- Automotive Temp.
64Kb Serial 3V F-RAM Memory
Features
64K bit Ferroelectric Nonvolatile RAM
Organized as 8192 x 8 bits
High Endurance 10 Trillion (10
13
) Read/Writes
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 1 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Low Power Consumption
Low Voltage Operation 3.0-3.6V
6
A
Standby Current (+85C)
Industry Standard Configuration
Automotive Temperature -40C to +125C
o
Qualified to AEC Q100 Specification
8-pin “Green”/RoHS SOIC Package
Description
The FM24CL64B is a 64Kbit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM24CL64B performs write operations at bus
speed. No write delays are incurred. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers write
endurance orders of magnitude higher than
EEPROM. Also, F-RAM exhibits much lower power
during writes than EEPROM since write operations
do not require an internally elevated power supply
voltage for write circuits.
These capabilities make the FM24CL64B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24CL64B provides substantial benefits to
users of serial EEPROM, yet these benefits are
available in a hardware drop-in replacement. The
device is available in industry standard 8-pin SOIC
package using a familiar two-wire (I
2
C) protocol. The
device is guaranteed over the automotive temperature
range of -40°C to +125°C.
Pin Configuration
A0
A1
A2
VSS
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
Pin Name
A0-A2
SDA
SCL
WP
VDD
VSS
Function
Device Select Address
Serial Data/address
Serial Clock
Write Protect
Supply Voltage
Ground
Ordering Information
FM24CL64B-G
A
FM24CL64B-GATR
“Green”/RoHS 8-pin SOIC,
Automotive Grade 1
“Green”/RoHS 8-pin SOIC,
Automotive Grade 1,
Tape & Reel
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.1
June 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Page 1 of 12

FM24CL64B-GATR相似产品对比

FM24CL64B-GATR FM24CL64B-GA
描述 Memory Circuit, 8KX8, CMOS, PDSO8 Memory Circuit, 8KX8, CMOS, PDSO8
是否Rohs认证 符合 符合
厂商名称 Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation)
包装说明 SOP, SOP8,.25 SOP, SOP8,.25
Reach Compliance Code unknown unknown
JESD-30 代码 R-PDSO-G8 R-PDSO-G8
内存密度 65536 bit 65536 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8
端子数量 8 8
字数 8192 words 8192 words
字数代码 8000 8000
最高工作温度 125 °C 125 °C
最低工作温度 -40 °C -40 °C
组织 8KX8 8KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP
封装等效代码 SOP8,.25 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
电源 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified
筛选级别 AEC-Q100 AEC-Q100
最大待机电流 0.00002 A 0.00002 A
最大压摆率 0.00034 mA 0.00034 mA
标称供电电压 (Vsup) 3.3 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE
端子形式 GULL WING GULL WING
端子节距 1.27 mm 1.27 mm
端子位置 DUAL DUAL
Base Number Matches 1 1
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