AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge
TM
Product Information
Product Features
x
1800 – 2300 MHz
x
+28.5 dBm P1dB
x
+44 dBm Output IP3
Product Description
The AH115 / ECP050 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve high performance for
various narrow-band tuned application circuits with up to
+44 dBm OIP3 and +28.5 dBm of compressed 1-dB power.
All devices are 100% RF and DC tested. The AH115 /
ECP050 is available in lead-free/green/RoHS-compliant
SOIC-8 package.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 / ECP050 to maintain high linearity over
temperature and operate directly off a +5 V supply. This
combination makes the device an excellent fit for
transceiver line cards and power amplifiers in current and
next generation multi-carrier 3G base stations.
Functional Diagram
1
8
7
6
5
2
3
4
x
14 dB Gain @ 1960 MHz
x
MTTF > 100 Years
x
+5V Single Positive Supply
x
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
x
Mobile Infrastructure
x
Final Stage Amplifier for
Repeaters
Function
Vref
Input / Base
Output / Collector
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside
Paddle
2, 4, 5
Specifications
(1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Typical Performance
(1)
Min
1800
12.5
2140
14.4
23
8
+28.5
+42
+22.5
+20
200
5.3
250
+5
300
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
Typ
Max
2300
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR,
@ -45 dBc ACLR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
1960
14.3
-12
-8
+28.3
+44
+22.5
+20
5
5.3
+5 V @ 250 mA
2140
14.4
-23
-8
+28.5
+42
+26.5
+41
W-CDMA Channel Power
Noise Figure
Supply Bias
W-CDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range
(3)
Device Voltage
1. Test conditions unless otherwise noted. 25ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Ordering Information
Part No.
AH115-S8
ECP050G
AH115-S8G
AH115-S8PCB1960
AH115-S8PCB2140
Parameter
-40 to +85
qC
-65 to +150
qC
+22 dBm
+8 V
400 mA
2W
+250
qC
Rating
Description
(lead-tin SOIC-8 Pkg)
(lead-tin SOIC-8 Pkg)
½ Watt, High Linearity InGaP HBT Amplifier
½ Watt, High Linearity InGaP HBT Amplifier
1960 MHz Evaluation Board
2140 MHz Evaluation Board
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
½ Watt, High Linearity InGaP HBT Amplifier
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 7
May 2005
AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge
TM
Product Information
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25 C, unmatched 50 ohm system)
35
30
25
G ain (dB)
20
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
0.2
Typical Device Data
S11
6
0.
0. 8
6
0.
Gain and Maximum Stable Gain
0.
4
Swp Max
5.05GHz
2.
0
1.0
0.8
1.0
0
3.
0
4.
10.0
15
10
5
0
0
0.5
1
1.5
Frequency (GHz)
2
2.5
5.0
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
.4
-0
.4
-0
.
-2
-0
.6
-0
.6
.0
-2
0
-0.8
Swp Min
0.05GHz
-0 .8
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The return loss plots are shown from 50 – 5050 MHz, with markers placed at 0.5 – 5.05 GHz in 0.5 GHz increments.
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
¢
-1.0
S12 (dB)
S12 (ang)
S22 (dB)
-1.0
S22 (ang)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
-2.11
-1.59
-1.51
-1.45
-1.58
-1.78
-1.96
-2.46
-3.30
-4.70
-8.15
-19.01
-9.59
-4.09
-1.99
-1.12
-0.72
-172.90
-178.94
173.71
163.84
153.68
144.31
134.21
123.44
111.21
92.57
78.58
93.29
177.56
159.30
141.65
127.57
116.11
25.10
21.15
17.75
15.23
13.69
12.77
11.94
11.36
11.17
11.39
11.64
11.51
10.35
7.87
4.95
1.97
-0.88
133.84
126.67
124.19
111.50
98.94
84.57
69.70
55.57
40.93
22.80
1.64
-25.24
-55.97
-83.78
-105.90
-122.86
-136.93
-36.03
-35.22
-34.29
-34.45
-33.58
-32.84
-32.77
-31.79
-31.12
-30.30
-29.47
-29.31
-30.51
-32.59
-33.96
-34.68
-35.64
31.44
15.04
7.30
-2.16
-2.99
-12.80
-18.76
-30.73
-45.14
-61.92
-83.99
-112.79
-150.45
177.62
137.14
109.27
81.83
-2.06
-2.73
-2.80
-2.73
-1.96
-1.68
-1.85
-2.14
-2.30
-2.52
-2.43
-1.84
-1.22
-1.06
-1.07
-1.19
-1.44
-105.55
-138.75
-160.44
-174.00
-179.13
172.00
166.98
164.05
163.07
164.84
164.25
162.38
155.68
147.58
139.74
132.15
125.05
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 2 of 7
-4
.0
-5 .
0
-3
.0
-4
.0
-5.
0
2
-0.
2
-0 .
Sw p Min
0.05GHz
-10.0
0. 2
0
5.
0.
4
DB(GMax)
DB(|S[2,1]|)
2.
0
-1 0.0
-3
.0
¡
S22
Sw p Max
5.05GHz
0
3.
0
4.
5. 0
10 .0
May 2005
AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier
Typical RF Performance at 25qC
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
The Communications Edge
TM
Product Information
1960 MHz Application Circuit (AH115-S8PCB1960)
1960 MHz
14.3 dB
-12 dB
-8 dB
+28.3 dBm
+44 dBm
+22.5 dBm
5 dB
+5 V
250 mA
RES
ID=R1
R=100 Ohm
RES
ID=R4
R=0 Ohm
Vcc = +5 V
D1 = +5.6 V
CAP
ID=C4
C=10000000 pF
CAP
ID=C7
C=1000 pF
CAP
ID=C6
C=10 pF
RES
ID=R2
R=22 Ohm
CAP
ID=C5
C=1000 pF
TLINP
ID=FR-2
Z0=50 Ohm
L=25 mil
Eeff=3.16
Loss=0
F0=0 MHz
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=22 pF
RES
ID=R3
R=51 Ohm
SUBCKT
NET="AH115"
1
2
3
4
5
6
7
8
IND
ID=L1
L=18 nH
PORT
P=2
Z=50 Ohm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
CAP
ID=C2
C=22 pF
Noise Figure
Device / Supply Voltage
Quiescent Current
CAP
ID=C8
C=.8 pF
TLINP
ID=FR-1
Z0=50 Ohm
L=210 mil
Eeff=3.16
Loss=0
F0=0 MHz
CAP
ID=C9
C=2.0 pF
CAP
ID=C3
C=100 pF
C8 is placed at silkscreen marker ‘A’ or center of component placed at 1.8 deg. @ 1960 MHz
away from pin 3. C9 is placed at the silkscreen marker ‘4’ or center of component placed at 20
deg. @1960 MHz away from pin 6.
S21 vs. Frequency
16
14
S21 (dB)
S11 vs. Freqency
0
-5
S11 (dB)
S22 (dB)
S22 vs. Frequency
0
-5
-10
-15
-20
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
12
10
8
6
1930
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
-10
-15
-20
-25
1930
+25°C
85°C
-40°C
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Frequency (MHz)
-25
1930
Frequency (MHz)
Noise Figure vs. Frequency
7
6
P1 dB (dBm)
P1 dB vs. Frequency
30
29
ACPR (dBc)
ACPR vs. Channel Power
IS-95, 9 ch,Fwd, ±885 KHz offset, 30 KHz Meas BW, 1960 MHz
-40
-45
-50
-55
-60
-65
-70
1940
1950
1960
1970
1980
1990
15
16
17
18
19
20
21
Frequency (MHz)
+25°C
+85°C
-40°C
22
23
24
5
NF (dB)
4
3
2
1
0
1930
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
28
27
26
25
24
1930
+25°C
+85°C
-40°C
Frequency (MHz)
Output Channel Power (dBm)
OIP3 vs. Output Power
freq=1960, 1961 MHz,+ 25°
C
OIP3 vs. Frequency
+25°C, +11 dBm / tone
OIP3 vs. Temperature
freq=1960,1961 MHz, +11 dBm / tone
46
44
OIP3 (dBm)
OIP3 (dBm)
46
44
42
40
38
36
1930
OIP3 (dBm)
46
44
42
40
38
36
1940
1950
1960
1970
1980
1990
42
40
38
36
8
10
12
14
16
Output Power (dBm)
18
20
-40
-15
10
35
60
85
Frequency (MHz)
Temperature (°C)
Specifications and information are subject to change without notice
£
£
£
£
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 3 of 7
May 2005
½ Watt, High Linearity InGaP HBT Amplifier
AH115 / ECP050G
2140 MHz
14.4 dB
-23 dB
-8 dB
+28.5 dBm
+42 dBm
+20 dBm
5.3 dB
+5 V
250 mA
PORT
P=1
Z=50 Ohm
The Communications Edge
TM
Product Information
2140 MHz Application Circuit (AH115-S8PCB2140)
Typical RF Performance at 25qC
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
(@-45 dBc ACLR)
RES
ID =R1
R=100 Ohm
RES
ID=R4
R=0 Ohm
Vcc = +5 V
D1 = +5.6 V
CAP
ID=C 4
C=10000000 pF
CAP
ID=C7
C=1000 pF
C AP
ID=C 6
C =10 pF
RES
ID=R2
R=22 Ohm
CAP
ID=C5
C=1000 pF
RES
ID=R3
R=51 Ohm
CAP
ID=C1
C=22 pF
SUBCKT
NET="AH115"
1
2
3
5
6
7
8
IND
ID=L1
L=18 nH
PORT
P=2
Z=50 Ohm
W-CDMA Channel Power
Noise Figure
Device / Supply Voltage
Quiescent Current
CAP
ID =C2
C=22 pF
4
TLINP
ID=FR-1
Z0=50 Ohm
L=160 mil
Eeff=3.16
Loss=0
F0=0 MHz
CAP
ID =C9
C=1.8 pF
CAP
ID=C3
C=100 pF
C9 is placed at the silkscreen marker ‘3’ or center of component placed at 13 deg. @2140
MHz away from pin 6.
S21 vs. Frequency
16
14
S11 (dB)
S21 (dB)
S11 vs. Frequency
0
-5
-10
-15
-20
-25
2110
+25°C
+85°C
S22 (dB)
S22 vs. Frequency
0
-5
-10
-15
-20
-25
2110
+25°C
+85°C
-40°C
2120
2130
2140
2150
2160
2170
12
10
8
6
2110
+25°C
+85°C
-40°C
2120
2130
2140
2150
2160
2170
-40°C
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Frequency (MHz)
3GPP W-CDMA Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
Frequency (MHz)
Noise Figure vs. Frequency
8
7
6
ACPR (dBc)
ACPR vs. Channel Power
P1 dB vs. Frequency
30
28
P1 dB (dBm)
-35
-40
-45
-50
-55
-60
-65
+25°C
+85°C
-40°C
NF (dB)
5
4
3
2
1
0
2110
2120
+ 25°C
+85°C
-40°C
2130
2140
2150
2160
2170
26
24
22
+25°C
+85°C
-40°C
2120
2130
2140
2150
2160
2170
15
16
17
18
19
20
21
20
2110
Frequency (MHz)
Output Channel Power (dBm)
Frequency (MHz)
OIP3 vs. Frequency
+25°C, +11 dBm / tone
freq. = 2140, 2141, +11 dBm / tone
OIP3 vs. Temperature
OIP3 vs. Output Power
45
43
OIP3 (dBm)
45
43
OIP3 (dBm)
OIP3 (dBm)
45
43
41
39
37
35
freq. = 2140, 2141 MHz, 25°
C
41
39
37
35
2110
41
39
37
35
2120
2130 2140 2150
Frequency (MHz)
2160
2170
-40
-15
10
35
Temperature ( °C)
60
85
6
8
10
12
14
16
18
20
Output Power (dBm)
Specifications and information are subject to change without notice
¤
¤
¤
¤
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 4 of 7
May 2005
½ Watt, High Linearity InGaP HBT Amplifier
AH115 / ECP050G
Outline Drawing
The Communications Edge
TM
Product Information
AH115-S8 (SOIC-8 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Product Marking
The component will be marked with an
“AH115-S8” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
MSL Rating: Level 3 at +235 C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
Land Pattern
1. Ground / thermal vias are critical for the proper performance of
this device. Vias should use a .35mm (#80 / .0135” ) diameter
drill and have a final plated thru diameter of .25 mm (.010” ).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board
to a heatsink. Ensure that the ground / thermal via region
contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board
material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
Thermal Specifications
Parameter
Operating Case Temperature
Thermal Resistance
(1)
, Rth
Junction Temperature
(2)
, Tjc
¦
Rating
MTTF (million hrs)
MTTF vs. GND Tab Temperature
1000000
100000
10000
1000
100
50
60
70
80
90
100
Tab Temperature (° C )
-40 to +85q C
62q C / W
162q C
Notes:
1. The thermal resistance is referenced from the junction-to-
case at a case temperature of 85 C. Tjc is a function of the
voltage at pins 6 and 7 and the current applied to pins 6, 7,
and 8 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V,
250 mA at an 85 C case temperature. A minimum MTTF
of 1 million hours is achieved for junction temperatures
below 247 C.
¦
¦
Specifications and information are subject to change without notice
¥
¥
¥
¥
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 5 of 7
¦
§
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
May 2005
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