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1KSMB10C

产品描述Trans Voltage Suppressor Diode, 1000W, 8.55V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
产品类别分立半导体    二极管   
文件大小926KB,共6页
制造商Littelfuse
官网地址http://www.littelfuse.com
标准
下载文档 详细参数 全文预览

1KSMB10C概述

Trans Voltage Suppressor Diode, 1000W, 8.55V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

1KSMB10C规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码DO-214AA
包装说明R-PDSO-C2
针数2
Reach Compliance Code_compli
ECCN代码EAR99
其他特性UL RECOGNIZED
最大击穿电压10.5 V
最小击穿电压9.5 V
击穿电压标称值10 V
最大钳位电压14.5 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散1000 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性BIDIRECTIONAL
最大功率耗散5 W
认证状态Not Qualified
最大重复峰值反向电压8.55 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间40
Base Number Matches1

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Transient Voltage Suppression Diodes
Surface Mount – 1000W > 1KSMB series
1KSMB Series
Uni-directional
Bi-directional
Description
RoHS
The 1KSMB series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• RoHS compliant
• For surface mounted
applications to optimize
board space
• Low profile package
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
15kV(Air), 8kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2 (IEC801-2)
• EFT protection of data
lines in accordance with
IEC 61000-4-4 (IEC801-4)
• Built-in strain relief
V
BR
@T
J
= V
BR
@25°C × (1+
α
T
x (T
J
- 25))
(αT:
Temperature Coefficient)
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E128662
Maximum Ratings and Thermal Characteristics
(T
A
=25°C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2)
Power Dissipation on Infinite Heat
Sink at T
A
=50°C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 50A for Unidirectional
Only (Note 4)
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
R
uJL
R
uJA
Value
1000
5.0
100
3.5V/5.0
-55 to 150
20
100
Unit
W
W
A
V
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
A
= 25°C per Fig. 3.
2. Mounted on copper pad area of 0.2x0.2” (5.0 × 5.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
4. V
F
<3.5V for V
BR
<
50V and V
F
<5.0V for V
BR
>
51V.
_
_
• Glass passivated chip
junction
• 1000W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
Applications
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
less than 1µA
above 12V
• High temperature
soldering guaranteed:
260°C/40 seconds at
terminals
• Plastic package has
underwriters laboratory
flammability 94V-O
• Meet MSL level1, per
J-STD-020, LF maximum
peak of 260°C
• Matte tin lead–free Plated
• Available in breakdown
Voltage from 6.8V to 180V
specially designed for
automotive applications
• Offers high-surge rating in
compact package: bridges
the gap between 600W
and 1.5KW
• Halogen free and RoHS
compliant
Functional Diagram
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic applications.
Additional Information
Bi-directional
Cathode
Uni-directional
Anode
Datasheet
Resources
Samples
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/13/13
1KSMB Series

 
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