HM5117400B Series
4,194,304-word
4-bit Dynamic Random Access Memory
ADE-203-369A (Z)
Rev. 1.0
Nov. 15, 1995
Description
The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word 4 bit. It employs the most
advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode
as a high speed access mode.
Features
Single 5 V ( 10%)
High speed
Access time : 60 ns/ 70 ns/ 80 ns (max)
Low power dissipation
Active mode : 605 mW/550 mW/495 mW(max)
Standby mode : 11 mW (max)
: 0.83 mW (max) (L-version)
Fast page mode capability
Long refresh period
2048 refresh cycles : 32 ms
: 128 ms (L-version)
3 variations of refresh
-only refresh
-before-
refresh
Hidden refresh
Battery backup operation (L-version)
Test function
16-bit parallel test mode
This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS INSTRUMENTS.
HM5117400B Series
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Supply voltage relative to V
SS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Symbol
V
T
V
CC
Iout
P
T
Topr
Tstg
Value
–1.0
to +7.0
–1.0
to +7.0
50
1.0
0 to +70
–55
to +125
Unit
V
V
mA
W
C
C
Recommended DC Operating Conditions
(Ta = 0 to +70 C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Note:
1. All voltage referred to V
SS
Symbol
V
CC
V
IH
V
IL
Min
4.5
2.4
–1.0
Typ
5.0
—
—
Max
5.5
6.5
0.8
Unit
V
V
V
Note
1
1
1
DC Characteristics
(Ta = 0 to +70 C, V
CC
= 5 V
HM5117400B
-6
Parameter
Operating current
*1, *2
Standby current
Symbol Min
I
CC1
I
CC2
—
—
-7
Max Min
110
2
—
—
10%, V
SS
= 0 V)
-8
Max Min
100
2
—
—
Max Unit Test Conditions
90
2
mA
mA
t
RC
= min
TTL interface
,
= V
IH
Dout = High-Z
CMOS interface
,
V
CC
–
0.2V
Dout = High-Z
CMOS interface
,
V
CC
–
0.2V
Dout = High-Z
—
1
—
1
—
1
mA
Standby current
(L-version)
I
CC2
—
150
—
150
—
150
A
5
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