ASTD SERIES
PLANAR TUNNEL (BACK) DIODE
DESCRIPTION:
The
ASTD
Series of Tunnel Diodes
are Optimized for Operation as Back
Diode Detectors in Applications up
to 18 GHz.
PACKAGE STYLE 51
FEATURES INCLUDE:
•
Excellent Temperature Stability
•
Fast Rise / Fall Times
•
Available in Die Form
MAXIMUM RATINGS
I
R
P
DISS
P
DISS
T
J
T
STG
10 mA
3 ERG spike
50 mW @ T
A
= +60 C
-65 to +110 C
-65 to +125 C
T
C
= 25
O
O
O
O
ELECTRICAL CHARACTERISTICS
SYMBOL
I
P
C
TEST CONDITIONS
ASTD 1020
ASTD 2030
ASTD 3040
ASTD 4050
ASTD 5060
MINIMUM TYPICAL MAXIMUM
100
200
300
400
500
200
300
400
500
600
135
130
125
120
110
400
UNITS
µ
A
V
F
I
F
= 3 mA
ASTD 1020
ASTD 2030
ASTD 3040
ASTD 4050
ASTD 5060
mV
V
R
I
R
= 500
µA
mV
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/3
ASTD SERIES
PLANAR TUNNEL (BACK) DIODE
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
λ
F = 10 GHz
P
IN
= -20 dBm
T
C
= 25
O
C
Test Conditions
R
L
= 10 KΩ
ASTD 1020
ASTD 2030
ASTD 3040
ASTD 4050
ASTD 5060
Minimum
Typical
1,000
750
500
275
250
180
130
80
65
60
Maximum
Units
mV/mW
R
V
F = 10 GHz
P
IN
= -20 dBm
R
L
= 10 KΩ
ASTD 1020
ASTD 2030
ASTD 3040
ASTD 4050
ASTD 5060
Ω
R
S
I
R
= 10 mA
F = 100 MHz
7.0
Ω
ORDERING INFORMATION:
ASTD-XXXX-XX
_____
51 =
Case Style 51
820 =
Case Style 820
860 =
Case Style 860
__________ 1020
2030
3040
4050
5060
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
2/3
ASTD SERIES
PLANAR TUNNEL (BACK) DIODE
PACKAGE STYLE 820
PACKAGE STYLE 860
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
3/3
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