ASB8000
SILICON BEAM LEAD PIN DIODE
DESCRIPTION:
The
ASB8000
is a Silicon Beam Lead
PIN Diode Designed for High Speed
Switching Applications Up to 18 GHz.
FEATURES INCLUDE:
•
Low Capacitance
- 0.025 pF Typical
•
Low Series Resistance
- 2.5
Ω
Typical
•
High Beam Pulls
- 5 Grams Minimum
PACKAGE STYLE BL1
MAXIMUM RATINGS
I
F
V
R
P
DISS
T
J
T
STG
θ
JA
O
O
100 mA
60 V
250 mW @ T
A
= 25 C
-65 C to +175 C
-65 C to +200 C
600 C/W
O
O
O
O
NONE
CHARACTERISTICS
SYMBOL
V
BR
C
J
R
S
τ
t
rr
I
R
= 10
µA
V
R
= 10 V
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
Lead Pull
T
C
= 25 C
O
TEST CONDITIONS
f = 2 - 18 GHz
f = 1.0 GHz
I
R
= 6.0 mA
I
R
= 6.0 mA
MINIMUM
60
TYPICAL
0.025
2.5
40
2.4
MAXIMUM
0.035
3.0
UNITS
V
pF
Ω
nS
nS
gm
5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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