150W, 50V, 150MHz
N-CHANNEL RF POWER VERTICAL MOSFET
PRELIMINARY INFORMATION
VRF150
BROADBAND HF/VHF VERTICAL D-MOS
ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS
Features
•
•
•
•
•
•
•
150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V
150W WITH 18dB MIN GAIN @ 30MHz, 50V
EXCELLENT STABILITY & LOW IMD
COMMON SOURCE CONFIGURATION
30:1 LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
NITRIDE PASSIVATED
REFRACTORY GOLD METALLIZATION
DESCRIPTION:
The VRF150 is a gold metallized silicon, n-channel RF power
transistor designed for broadband commercial and military
applications requiring high power and gain without compromising
reliability, ruggedness, and intermodulation distortion.
1. DRAIN
2. SOURCE
3. GATE
4. SOURCE
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C)
°
Symbol
V
(BR)DSS
V
DGO
V
GS
I
D
P
DISS
T
J
T
STG
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current
Total Device Power Dissipation
Max Operating Junction Temperature
Storage Temperature
Value
125
125
±40
16
300
+200
-65 to +150
Unit
V
V
V
A
W
°
C
°
C
Thermal Data
R
è(J-C)
Thermal Resistance Junction-Case
0.6
°
C/W
VRF150.PDF 03-23-04
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
PRELIMINARY INFORMATION
VRF150
STATIC
ELECTRICAL SPECIFICATIONS (Tcase = 25° C)
25
°
Symbol
Off Characteristics:
V
(BR)DSS
V
GS
= 0V
I
DSS
V
GS
= 0V
I
GSS
V
GS
= 20V
On Characteristics:
V
GS(Q)
V
DS
= 10V
V
DS(ON)
V
GS
= 10V
G
FS
V
DS
= 10V
Dynamic Characteristics:
C
ISS
V
GS
= 0V
C
OSS
V
GS
= 0V
C
RSS
V
GS
= 0V
Test Conditions
I
DS
= 100mA
V
DS
= 50V
V
DS
= 0V
I
D
= 250mA
I
D
= 10A
I
D
= 250mA
V
DS
= 50V
V
DS
= 50V
V
DS
= 50V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min.
125
---
---
1.0
1.0
5.0
---
---
---
Value
Typ.
---
---
---
3.0
2.0
---
480
230
40
Max.
---
5.0
1.0
5.0
5.0
---
---
---
---
Unit
V
mA
µ
A
V
V
mho
pF
pF
pF
FUNCTIONAL TESTS
Symbol
P
OUT
G
PS
G
PS
η
D
IMD
(d3)
Load
Mismatch
Test Conditions
f = 150MHz V
DD
= 50V I
DQ
= 250mA
f = 150MHz V
DD
= 50V P
OUT
= 150W
PEP
I
DQ
= 250mA
f = 30MHz
f = 150MHz
f1 = 30MHz
V
DD
= 50V
f = 30MHz
V
DD
= 50V P
OUT
= 150W
PEP
I
DQ
= 250mA
V
DD
= 50V P
OUT
= 150W
PEP
I
DQ
= 250mA
f2=30.001MHz P
OUT
= 150W
PEP
I
DQ
= 250mA
V
DD
= 50V P
OUT
= 150W
PEP
V
DQ
= 250mA
30:1 VSWR - All Phase Angles
Min.
150
---
---
---
---
Value
Typ.
10
18
50
-32
Max.
---
---
---
---
---
Unit
W
dB
dB
%
dBc
No degradation in Output Power
VRF150.PDF 03-23-04
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
PRELIMINARY INFORMATION
VRF150
TEST CIRCUIT INFORMATION
151
VRF150.PDF 03-23-04
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
PRELIMINARY INFORMATION
Power Out vs. Power In
VRF150
Vdd = 50V, Idq = 250mA, Freq = 175 MHz
160.00
140.00
120.00
Pout (W)
100.00
80.00
60.00
40.00
20.00
0.00
0.00
2.00
4.00
6.00
8.00
Pin (W)
10.00
12.00
14.00
16.00
Gain vs. Power Out
Vdd = 50V, Idq = 250mA, Freq = 175 MHz
12.0
11.5
11.0
Gain (dB)
10.5
10.0
9.5
9.0
8.5
8.0
0.00
20.00
40.00
60.00
80.00
Pout (W)
100.00
120.00
140.00
160.00
VRF150.PDF 03-23-04
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
PRELIMINARY INFORMATION
VRF150
PACKAGE MECHANICAL DATA
VRF150.PDF 03-23-04
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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