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GD19906-DIE

产品描述Telecom Circuit, Bipolar
产品类别无线/射频/通信    电信电路   
文件大小61KB,共5页
制造商Giga
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GD19906-DIE概述

Telecom Circuit, Bipolar

GD19906-DIE规格参数

参数名称属性值
厂商名称Giga
包装说明, DIE OR CHIP
Reach Compliance Codeunknown
最高工作温度85 °C
最低工作温度
封装等效代码DIE OR CHIP
电源8 V
认证状态Not Qualified
标称供电电压8 V
技术BIPOLAR
电信集成电路类型TELECOM CIRCUIT
温度等级OTHER
Base Number Matches1

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10 Gbit/s
Transimpedance
Amplifier
GD19906
Preliminary
General Description
The GD19906 is a pre-amplifier intended
for use in conjunction with a PIN photo-
detector to convert and amplify an optical
STM-64/OC-192 NRZ signal into an elec-
trical signal for further processing by
other elements of a reception system.
The GD19906 transimpedance amplifier
is intended for mounting in a hermetic
enclosure together with a low capaci-
tance (0.2 pF) photo-detector. The elec-
trical connection to the photo-detector
should be kept shortest possible.
The GD19906 transimpedance amplifier
has a single ended input. The input ter-
minal can be connected directly to the
photo-detector. Assembly of photo- de-
tector and transimpedance amplifier is
thus kept as simple as possible in order
to provide the basis for a transmission
line connection with good high frequency
characteristics.
The analogue output is a single ended
signal, which can be bonded to a nearby
output pin, or via the GIGA FlexGuide®
interconnected directly to another inte-
grated citcuit.
Features
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Low noise.
High bandwidth.
Data-rates up to 10 Gbit/s NRZ.
Small die-size, only one external cap
required.
Non-inverting.
Single supply operation: 8 V
Power dissipation: only 750 mW
Transimpedance: 500
Input photo current overload: 2.5 mA
Input equivalent noise: 12 pA/√Hz
Die size: 1.1 × 0.95 mm
l
l
l
l
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R
F
GND
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Applications
IIN
VOUT
l
With PIN or APD photo-detector in
high-speed optical receiver front-end.
Tele Communication transmission
equipment:
– SDH
– SONET
WDM transmission equipment.
l
VCC
l
Figure 1.
Block Diagram.
Data Sheet Rev. 04

 
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